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APT7M120S

APT7M120S
Mfr. #:
APT7M120S
製造商:
Microchip / Microsemi
描述:
MOSFET FG, MOSFET, 1200V, TO-268
生命週期:
製造商新產品
數據表:
APT7M120S 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT7M120S DatasheetAPT7M120S Datasheet (P4)
ECAD Model:
產品屬性
屬性值
製造商：
微芯片
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
D3PAK-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
1.2 kV
Id - 連續漏極電流：
8 A
Rds On - 漏源電阻：
1.5 Ohms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
80 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
335 W
配置：
單身的
頻道模式：
增強
打包：
管子
晶體管類型：
1 N-Channel
品牌：
微芯片/Microsemi
正向跨導 - 最小值：
8 S
秋季時間：
13 ns
產品類別：
MOSFET
上升時間：
8 ns
出廠包裝數量：
1
子類別：
MOSFET
典型關斷延遲時間：
45 ns
典型的開啟延遲時間：
14 ns
單位重量：
1.340411 oz
Tags
APT7, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***N
    A***N
    RU

    Good bridges work! Fast shipping!

    2019-01-11
    M***v
    M***v
    RU

    Came in safe and sound, thanks to the seller

    2019-05-08
    V***i
    V***i
    UA

    Delivery-22 days. i recommend the seller.

    2019-02-15
    I***v
    I***v
    RU

    Leds quality work well, product quality will show time.

    2019-05-31
***ical
Trans MOSFET N-CH Si 1.2KV 8A 3-Pin(2+Tab) D3PAK Tube
***et
Power MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268
*** Stop Electro
Power Field-Effect Transistor, 7A I(D), 1200V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
N-Channel Power MOSFET, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
***et
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***ark
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain
***nell
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.221ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***icroelectronics
N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
***ponent Sense
power mosfet 950V 30V-TRANSISTOR FET N-C
***ical
Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) H2PAK T/R
***enic
950V 6A 110W 1.25´Î@10V3A 5V@100Ã×A N Channel H2PAK-2 MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 6A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 950V, 6A, 150DEG C, 110W; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 950V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak
*** Electronic Components
MOSFET N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 950 V 0.8 Ohm Surface Mount Power MOSFET - D2PAK-3
***r Electronics
Power Field-Effect Transistor, 8A I(D), 950V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
型號 製造商 描述 庫存 價格
APT7M120S
DISTI # APT7M120S-ND		Microsemi CorporationMOSFET N-CH 1200V 8A D3PAK
RoHS: Compliant
Min Qty: 79
Container: Bulk		Temporarily Out of Stock
  • 79:$6.6911
APT7M120S
DISTI # APT7M120S		Microchip Technology IncPower MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268 - Rail/Tube (Alt: APT7M120S)
RoHS: Compliant
Min Qty: 79
Container: Tube		Americas - 0
  • 790:$3.9900
  • 395:$4.0900
  • 237:$4.1900
  • 158:$4.2900
  • 79:$4.4900
APT7M120S
DISTI # 494-APT7M120S		Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant		75
  • 1:$9.2500
  • 5:$8.8900
  • 10:$8.5600
  • 25:$7.8600
  • 50:$7.5800
  • 100:$7.3100
  • 250:$6.7100
  • 500:$6.4700
  • 1000:$6.2400
圖片 型號 描述
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12

 Rectifiers HVM 350mA 12000v
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12-111

 Rectifiers HVM 350mA 12000v
NLV32T-330J-EF

Mfr.#: NLV32T-330J-EF

OMO.#: OMO-NLV32T-330J-EF-TDK

 Fixed Inductors 33uH 5.6ohms 70mA Wound Ferrite
可用性
庫存:
75
訂購:
2058
輸入數量:
APT7M120S的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$9.25
US$9.25
5
US$8.89
US$44.45
10
US$8.56
US$85.60
25
US$7.86
US$196.50
50
US$7.58
US$379.00
100
US$7.31
US$731.00
250
US$6.71
US$1 677.50
500
US$6.47
US$3 235.00
1000
US$6.24
US$6 240.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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