S25FL128SAGBHM200

Mfr. #:: S25FL128SAGBHM200
製造商:: Cypress Semiconductor
描述:: NOR Flash IC 128 Mb FLASHMEM
生命週期:: 製造商新產品
數據表:: S25FL128SAGBHM200 數據表
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更多信息:: S25FL128SAGBHM200 更多信息 S25FL128SAGBHM200 Product Details

產品屬性
屬性值

製造商：: 賽普拉斯半導體

產品分類：: NOR閃存

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: BGA-24

系列：: S25FL128S

內存大小：: 128 Mbit

最大時鐘頻率：: 133 MHz

接口類型：: SPI

組織：: 16 M x 8

計時類型：: 異步

數據總線寬度：: 8 bit

電源電壓 - 最小值：: 2.7 V

電源電壓 - 最大值：: 3.6 V

電源電流 - 最大值：: 100 mA

最低工作溫度：: - 40 C

最高工作溫度：: + 125 C

資質：: AEC-Q100

打包：: 托盤

速度：: 133 MHz

品牌：: 賽普拉斯半導體

濕氣敏感：: 是的

產品類別：: NOR閃存

出廠包裝數量：: 338

子類別：: 內存和數據存儲

商品名：: 鏡像位

Tags: S25FL128SAGB, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL128SAGBHM200 描述

***ical: 128 Mbit 3.0V SPI Flash Memory

***i-Key: IC 128 MB FLASH MEMORY

S25FL128SAGBHM200 更多信息

S25FL128S NOR Flash Memory Devices: Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

型號	製造商	描述	庫存	價格
S25FL128SAGBHM200 DISTI # V99:2348_19096604	Cypress Semiconductor	IC 128 Mb FLASH MEMORY	338	250:$4.6550 100:$5.0839 50:$5.4340 25:$5.7610 10:$6.3949 1:$7.7440
S25FL128SAGBHM200 DISTI # V36:1790_19096604	Cypress Semiconductor	IC 128 Mb FLASH MEMORY	0	338000:$3.5750 169000:$3.5790 33800:$3.9630 3380:$4.6890 338:$4.8140
S25FL128SAGBHM200 DISTI # S25FL128SAGBHM200-ND	Cypress Semiconductor	IC 128 MB FLASH MEMORY RoHS: Compliant Min Qty: 338 Container: Tray	Temporarily Out of Stock	338:$4.8135
S25FL128SAGBHM200 DISTI # 30279384	Cypress Semiconductor	IC 128 Mb FLASH MEMORY	338	250:$4.6550 100:$5.0839 50:$5.4340 25:$5.7610 10:$6.3949 2:$7.7440
S25FL128SAGBHM200 DISTI # 47AC6065	Cypress Semiconductor	S25FL128SAGBHM200	0	500:$3.8400 250:$3.9600 100:$4.7200 50:$5.0800 25:$5.4300 10:$5.9600 1:$6.6400
S25FL128SAGBHM200 DISTI # 727-S25FL128SAGBM200	Cypress Semiconductor	NOR Flash IC 128 Mb FLASHMEM RoHS: Compliant	304	1:$7.0800 10:$6.4900 25:$5.9000 50:$5.6200 100:$5.3100 250:$4.9100

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