IXFN240N15T2

IXFN240N15T2
Mfr. #:
IXFN240N15T2
製造商:
Littelfuse
描述:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
生命週期:
製造商新產品
數據表:
IXFN240N15T2 數據表
交貨:
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支付:
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HTML Datasheet:
IXFN240N15T2 DatasheetIXFN240N15T2 Datasheet (P4-P6)
ECAD Model:
更多信息:
IXFN240N15T2 更多信息
產品屬性
屬性值
製造商:
IXYS
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
底盤安裝
包裝/案例:
SOT-227-4
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
150 V
Id - 連續漏極電流:
240 A
Rds On - 漏源電阻:
5.2 mOhms
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
460 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
830 W
頻道模式:
增強
商品名:
高功率場效應晶體管
打包:
管子
系列:
IXFN240N15
類型:
GigaMOS Trench T2 HiperFet
品牌:
IXYS
正向跨導 - 最小值:
125 S
秋季時間:
145 ns
產品類別:
MOSFET
上升時間:
125 ns
出廠包裝數量:
10
子類別:
MOSFET
典型關斷延遲時間:
77 ns
典型的開啟延遲時間:
48 ns
單位重量:
1.058219 oz
Tags
IXFN24, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 150 V 240 A 5.2 mO Surface Mount Power Mosfet - SOT 227
***i-Key
MOSFET N-CH 150V 240A SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
型號 製造商 描述 庫存 價格
IXFN240N15T2
DISTI # IXFN240N15T2-ND
IXYS CorporationMOSFET N-CH 150V 240A SOT227
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$27.7500
IXFN240N15T2
DISTI # 747-IXFN240N15T2
IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
0
  • 200:$21.7500
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Mfr.#: IXFN240N25X3

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Mfr.#: IXFN24N90Q

OMO.#: OMO-IXFN24N90Q-IXYS-CORPORATION

MOSFET 24 Amps 900V 0.45W Rds
IXFN240N15T2

Mfr.#: IXFN240N15T2

OMO.#: OMO-IXFN240N15T2-IXYS-CORPORATION

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
可用性
庫存:
Available
訂購:
3000
輸入數量:
IXFN240N15T2的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
10
US$27.75
US$277.50
30
US$25.50
US$765.00
50
US$24.42
US$1 221.00
100
US$23.70
US$2 370.00
200
US$21.75
US$4 350.00
500
US$20.70
US$10 350.00
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