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VN3205N3-G-P002

VN3205N3-G-P002
Mfr. #:
VN3205N3-G-P002
製造商:
Microchip Technology
描述:
MOSFET N-CH Enhancmnt Mode MOSFET
生命週期:
製造商新產品
數據表:
VN3205N3-G-P002 數據表
交貨:
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更多信息:
VN3205N3-G-P002 更多信息 VN3205N3-G-P002 Product Details
產品屬性
屬性值
製造商：
微芯片
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-92-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
50 V
Id - 連續漏極電流：
1.2 A
Rds On - 漏源電阻：
450 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
1 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
5.33 mm
長度：
5.21 mm
產品：
MOSFET 小信號
晶體管類型：
1 N-Channel
寬度：
4.19 mm
品牌：
微芯科技
秋季時間：
25 ns
產品類別：
MOSFET
上升時間：
15 ns
出廠包裝數量：
2000
子類別：
MOSFET
典型關斷延遲時間：
25 ns
典型的開啟延遲時間：
10 ns
單位重量：
0.016000 oz
Tags
VN3205N3-G, VN3205N3, VN3205N, VN3205, VN320, VN32, VN3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R
*** Stop Electro
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***ure Electronics
N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92
***ponent Sense
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
***ark
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 1.1A E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ment14 APAC
MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
N-Channel 60 V 0.33 Ohm Through Hole Enhancement Mode DMOS FET - TO-92
***ical
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.33Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pinsrohs Compliant: No
***(Formerly Allied Electronics)
MOSFET P-ch 50V 0.175A 10R 0.625W E-Line
***ark
P CHANNEL MOSFET, -50V, 175mA TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:170mA; Drain Source Voltage, Vds:-50V; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:-5V; Threshold Voltage, Vgs Typ:-2V ;RoHS Compliant: Yes
***nell
MOSFET, P E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 625mW; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 1.27mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 500mA
***p One Stop Global
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R
***el Electronic
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
型號 製造商 描述 庫存 價格
VN3205N3-G-P002
DISTI # VN3205N3-G-P002-ND		Microchip Technology IncMOSFET N-CH 50V 1.2A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$1.0300
VN3205N3-G-P002
DISTI # VN3205N3-G-P002		Microchip Technology IncTrans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R - Tape and Reel (Alt: VN3205N3-G-P002)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.7099
  • 4000:$0.6859
  • 8000:$0.6639
  • 12000:$0.6439
  • 20000:$0.6339
VN3205N3-G-P002
DISTI # 53Y4339		Microchip Technology IncMOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 Ohm3 TO-92 RVT/R0
  • 1:$1.3600
  • 25:$1.1300
  • 100:$1.0300
VN3205N3-G-P002
DISTI # 70483897		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92RVT/R
RoHS: Compliant		0
  • 2000:$0.9800
VN3205N3-G-P002
DISTI # VN3205N3-G-P002		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE50V0.3 Ohm
RoHS: Compliant		10000
  • 1000:$0.8300
  • 100:$1.0000
  • 26:$1.1000
  • 1:$1.3200
VN3205N3-G-P002
DISTI # 689-VN3205N3-G-P002		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		676
  • 1:$1.3600
  • 10:$1.3400
  • 25:$1.1400
  • 100:$1.0300
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 全新原裝
可用性
庫存:
546
訂購:
2529
輸入數量:
VN3205N3-G-P002的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.35
US$1.35
10
US$1.33
US$13.30
25
US$1.13
US$28.25
100
US$1.03
US$103.00
250
US$0.90
US$226.25
500
US$0.77
US$386.00
1000
US$0.70
US$703.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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