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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BUZ311 | Infineon Technologies AG | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant | 1404 |
|
| BUZ311 | Siemens | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant | Europe - 1025 |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BUZ103 OMO.#: OMO-BUZ103-1190 |
40 A, 50 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
|
Mfr.#: BUZ32E3045 OMO.#: OMO-BUZ32E3045-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BUZ42S OMO.#: OMO-BUZ42S-1190 |
全新原裝 |
|
Mfr.#: BUZ44A OMO.#: OMO-BUZ44A-1190 |
全新原裝 |
|
Mfr.#: BUZ45 OMO.#: OMO-BUZ45-1190 |
全新原裝 |
|
Mfr.#: BUZ57 OMO.#: OMO-BUZ57-1190 |
全新原裝 |
|
Mfr.#: BUZ71FI OMO.#: OMO-BUZ71FI-1190 |
Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
Mfr.#: BUZ73AIN OMO.#: OMO-BUZ73AIN-1190 |
- Bulk (Alt: BUZ73AIN) |
|
Mfr.#: BUZ901D OMO.#: OMO-BUZ901D-1190 |
N CHANNEL MOSFET, 200V, 16A, TO-3, Transistor Polarity:N Channel, Continuous Drain Current Id:16A, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.75ohm, Rds(on) Test Voltage Vgs:-, Thres |
|
Mfr.#: BUZ93GD OMO.#: OMO-BUZ93GD-1190 |
全新原裝 |