IXTN120P20T

Mfr. #:: IXTN120P20T
製造商:: Littelfuse
描述:: MOSFET TrenchP Power MOSFET
生命週期:: 製造商新產品
數據表:: IXTN120P20T 數據表
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HTML Datasheet:: IXTN120P20T Datasheet IXTN120P20T Datasheet (P4-P6)
ECAD Model:

產品屬性
屬性值

製造商：: IXYS

產品分類：: MOSFET

技術：: 矽

安裝方式：: 底盤安裝

包裝/案例：: SOT-227-4

晶體管極性：: P-通道

Vds - 漏源擊穿電壓：: 200 V

Id - 連續漏極電流：: 106 A

Rds On - 漏源電阻：: 30 mOhms

打包：: 管子

系列：: IXTN120P20

品牌：: IXYS

產品類別：: MOSFET

出廠包裝數量：: 10

子類別：: MOSFET

單位重量：: 1.058219 oz

Tags: IXTN1, IXTN, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTN120P20T 描述

***ical: Trans MOSFET P-CH 200V 106A 4-Pin SOT-227B

***S: French Electronic Distributor since 1988

***ark: Bipolar (BJT) Single Transistor, Darlington, NPN, 300 V, 225 W, 100 A, 300 RoHS Compliant: Yes

***r Electronics: Power Bipolar Transistor, 100A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans Darlington NPN 300V 100A 225000mW 4-Pin ISOTOP Tube

***ure Electronics: ESM3030DV Series 300 V 100 A NPN Darlington Power Module - ISOTOP

***ronik: NPN-TRANSISTOR 300V 100A ISOTOP RoHSconf

***ment14 APAC: DARLINGTON Transistor, SOT-227; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:225W; DC Collector Current:100A; DC Current Gain hFE:300hFE; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Av Current Ic:100A; Collector Emitter Saturation Voltage Vce(on):1.8V; Continuous Collector Current Ic Max:100A; Current Ib:5A; Current Ic Continuous a Max:100A; Current Ic hFE:85A; External Depth:38.2mm; External Length / Height:12.2mm; External Width:25.4mm; Hfe Min:300; Hfe Typ:300; No. of Transistors:1; Pin Configuration:b; Power Dissipation Ptot Max:225W; Pulsed Current Icm:150A; Transistor Type:Darlington; Voltage Vcbo:400V

***ource: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

***el Electronic: Trans IGBT Chip N-CH 600V 96A 4-Pin SOT-227 Rail

***et: PWR IGBT 39A,600V,SMPS N-CH W/DIODE TO-227

***DA Technology Co., Ltd.: Product Description Demo for Development.

Market price

型號	製造商	描述	庫存	價格
IXTN120P20T DISTI # V99:2348_15878343	IXYS Corporation	Trans MOSFET P-CH 200V 106A RoHS: Compliant	3	200:$28.5300 100:$29.9800 50:$31.3500 25:$32.6300 10:$35.6300 5:$37.1200 1:$38.8500
IXTN120P20T DISTI # IXTN120P20T-ND	IXYS Corporation	MOSFET P-CH 200V 106A SOT-227 RoHS: Compliant Min Qty: 10 Container: Tube	Temporarily Out of Stock	10:$36.4510
IXTN120P20T DISTI # 25894673	IXYS Corporation	Trans MOSFET P-CH 200V 106A RoHS: Compliant	3	200:$30.6698 100:$32.2285 50:$33.7013 25:$35.0772 10:$38.3023 5:$39.9040 1:$41.7638
IXTN120P20T DISTI # 747-IXTN120P20T	IXYS Corporation	MOSFET TrenchP Power MOSFET	13	1:$38.9800 5:$37.6100 10:$36.4500 25:$33.7100 50:$32.7100 100:$31.6000 200:$29.5000
IXTN120P20T DISTI # IXTN120P20T	IXYS Corporation	Module,single transistor,-200V,-106A,SOT227B,Ugs: ±15V,screw	8	10:$34.6100 3:$39.2000 1:$43.5600

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