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CSD19535KTTT

CSD19535KTTT
Mfr. #:
CSD19535KTTT
描述:
MOSFET 100V N-Channel NexFET Power MOSFET
生命週期:
製造商新產品
數據表:
CSD19535KTTT 數據表
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更多信息:
CSD19535KTTT 更多信息 CSD19535KTTT Product Details
產品屬性
屬性值
製造商：
德州儀器
產品分類：
MOSFET
RoHS：
E
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
200 A
Rds On - 漏源電阻：
3.4 mOhms
Vgs th - 柵源閾值電壓：
2.2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
75 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
300 W
配置：
單身的
頻道模式：
增強
商品名：
場效應管
打包：
捲軸
高度：
19.7 mm
長度：
9.25 mm
系列：
CSD19535KTT
晶體管類型：
1 N-Channel
寬度：
10.26 mm
品牌：
德州儀器
正向跨導 - 最小值：
301 S
秋季時間：
15 ns
濕氣敏感：
是的
產品類別：
MOSFET
上升時間：
18 ns
出廠包裝數量：
50
子類別：
MOSFET
典型關斷延遲時間：
21 ns
典型的開啟延遲時間：
9 ns
單位重量：
0.068643 oz
Tags
CSD19535, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 3-DDPAK/TO-263 -55 to 175
***ical
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R
***ark
Mosfet, N-Ch, 100V, 200A, To-263Aa-3
***S
French Electronic Distributor since 1988
*** Stop Electro
Power Field-Effect Transistor, 200A I(D), 100V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
*** Source Electronics
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
***(Formerly Allied Electronics)
IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK
***roFlash
Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
***nell
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
***ure Electronics
N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ
***Yang
Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***p One Stop Global
Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7
***emi
N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***XS
This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
***
™
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型號 描述 庫存 價格
CSD19535KTTT
DISTI # 296-41135-1-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-6-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-2-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		1250In Stock
  • 250:$2.5784
  • 100:$2.8571
  • 50:$3.1358
CSD19535KTTT
DISTI # CSD19535KTTT		Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19535KTTT)
RoHS: Compliant
Min Qty: 200
Container: Reel		Americas - 0
  • 200:$1.7900
  • 300:$1.6900
  • 500:$1.5900
  • 1000:$1.5900
  • 2000:$1.4900
CSD19535KTTTCSD19535KTT 100 V N-Channel NexFET&#153,Power MOSFET1000
  • 1000:$1.4400
  • 750:$1.5100
  • 500:$1.7900
  • 250:$2.1000
  • 100:$2.2400
  • 25:$2.5600
  • 10:$2.7500
  • 1:$3.0500
CSD19535KTTT
DISTI # 595-CSD19535KTTT		MOSFET 100V N-Channel NexFET Power MOSFET
RoHS: Compliant		561
  • 1:$3.3500
  • 10:$3.0200
  • 50:$3.0200
  • 100:$2.4700
  • 250:$2.3100
  • 500:$2.1000
CSD19535KTT
DISTI # 595-CSD19535KTT		MOSFET CSD19535KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263
RoHS: Compliant		88
  • 1:$3.0200
  • 10:$2.7100
  • 100:$2.2200
  • 250:$2.0800
  • 500:$1.8900
CSD19535KTTT
DISTI # 9009885P		NEXFET N-CHANNEL MOSFET 100V 140A D2PAK, RL230
  • 10:£2.2000
  • 26:£2.1150
  • 50:£2.0300
圖片 型號 描述
ADS1247IPW

Mfr.#: ADS1247IPW

OMO.#: OMO-ADS1247IPW

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LAN9514I-JZX

Mfr.#: LAN9514I-JZX

OMO.#: OMO-LAN9514I-JZX

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USB2514BI-AEZG

Mfr.#: USB2514BI-AEZG

OMO.#: OMO-USB2514BI-AEZG

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IRF2907ZPBF

Mfr.#: IRF2907ZPBF

OMO.#: OMO-IRF2907ZPBF

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ATMEGA2561-16AU

Mfr.#: ATMEGA2561-16AU

OMO.#: OMO-ATMEGA2561-16AU

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LT3990EDD#PBF

Mfr.#: LT3990EDD#PBF

OMO.#: OMO-LT3990EDD-PBF

 Switching Voltage Regulators 60V, 350mA Step-Down Regulator with 2uA Quiescent Current and Integrated Diodes in 3x3 DFN
74650174R

Mfr.#: 74650174R

OMO.#: OMO-74650174R

 Terminals WP-THRBU THR Bush M4 3.5mm Blind
ADS1247IPW

Mfr.#: ADS1247IPW

OMO.#: OMO-ADS1247IPW-TEXAS-INSTRUMENTS

 Analog to Digital Converters - ADC Low Noise,Prec 24B ADC
06033C104KAT2A

Mfr.#: 06033C104KAT2A

OMO.#: OMO-06033C104KAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 25volts 0.1uF 10% X7R
LAN9514I-JZX

Mfr.#: LAN9514I-JZX

OMO.#: OMO-LAN9514I-JZX-MICROCHIP-TECHNOLOGY

 USB Interface IC Hi-Speed USB 2.0 Hub High Perf 10/100 Ind
可用性
庫存:
Available
訂購:
1984
輸入數量:
CSD19535KTTT的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$3.70
US$3.70
10
US$3.32
US$33.20
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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