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BSC076N06NS3GATMA1

BSC076N06NS3GATMA1
Mfr. #:
BSC076N06NS3GATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
生命週期:
製造商新產品
數據表:
BSC076N06NS3GATMA1 數據表
交貨:
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HTML Datasheet:
BSC076N06NS3GATMA1 DatasheetBSC076N06NS3GATMA1 Datasheet (P4-P6)BSC076N06NS3GATMA1 Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PG-TDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
60 V
Id - 連續漏極電流：
50 A
Rds On - 漏源電阻：
7.6 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
37 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
69 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.27 mm
長度：
5.9 mm
系列：
OptiMOS 3
晶體管類型：
1 N-Channel
寬度：
5.15 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
30 S
秋季時間：
5 ns
產品類別：
MOSFET
上升時間：
40 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
20 ns
典型的開啟延遲時間：
15 ns
第 # 部分別名：
BSC076N06NS3 BSC76N6NS3GXT G SP000453656
單位重量：
0.010582 oz
Tags
BSC076N06NS3G, BSC076N06, BSC076, BSC07, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 7.6 mOhm 50 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 60V 50A Automotive 8-Pin TDSON EP T/R
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; On Resistance Rds(On):0.0062Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ure Electronics
Single N-Channel 60 V 6.6 mOhm 58 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:56A; On Resistance Rds(On):0.0066Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 56A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 56A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 99W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et
Trans MOSFET N-CH 60V 64A 8-Pin TDSON T/R
***nell
MOSFET, N-CH, 60V, 64A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 46W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***et
Trans MOSFET N-CH 60V 21.5A 8-Pin PowerPAK SO T/R
*** Americas
MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
***i-Key
MOSFET N-CH 60V 60A PPAK SO-8
***ark
N-Channel 60-V (D-S) Mosfet
*** Europe
N-CH POWERPAK 60V SO-8 BWL
***ical
Trans MOSFET N-CH 60V 60A Automotive 8-Pin Power QFN EP T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 60A, 6.5mΩ
*** Stop Electro
Power Field-Effect Transistor, 60A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
60V, 60A, 6.5mO, N-ch, Power56
***el Electronic
IC RTC CLK/CALENDAR I2C 8-TSSOP
***ark
NMOS PWR56 60V 8.5 MOHM / REEL
***(Formerly Allied Electronics)
Transistor, N-channel, enhancement mode MOSFET, MSL 1, 60V, 49A to 60A, SO-8
***ure Electronics
DMT6008LFG Series 60 V 13 A N-Channel Enhancement Mode Mosfet - PWDI3333-8
***et
Trans MOSFET N-CH 60V 13A 8-Pin PowerDI 3333-8 T/R 2K
***ark
Mosfet, N-Ch, 60V, 60A, Powerdi 3333 Rohs Compliant: Yes
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 12±V VGS
*** Electronics
MOSFET N-CH 60V 13A PWDI3333-8
***el Electronic
CAP CER 8200PF 50V C0G/NP0 1206
型號 製造商 描述 庫存 價格
BSC076N06NS3GATMA1
DISTI # BSC076N06NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		584In Stock
  • 1000:$0.5758
  • 500:$0.7293
  • 100:$0.9404
  • 10:$1.1900
  • 1:$1.3400
BSC076N06NS3GATMA1
DISTI # BSC076N06NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		584In Stock
  • 1000:$0.5758
  • 500:$0.7293
  • 100:$0.9404
  • 10:$1.1900
  • 1:$1.3400
BSC076N06NS3GATMA1
DISTI # BSC076N06NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4957
BSC076N06NS3GXT
DISTI # BSC076N06NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC076N06NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3899
  • 10000:$0.3759
  • 20000:$0.3619
  • 30000:$0.3499
  • 50000:$0.3439
BSC076N06NS3GATMA1
DISTI # 47Y7996		Infineon Technologies AGMOSFET Transistor, N Channel, 50 A, 60 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 1:$1.1200
  • 10:$0.9490
  • 25:$0.8760
  • 50:$0.8020
  • 100:$0.7290
  • 250:$0.6870
  • 500:$0.6440
  • 1000:$0.5090
BSC076N06NS3GATMA1.
DISTI # 25AC6433		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:69W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3900
  • 10000:$0.3760
  • 20000:$0.3620
  • 30000:$0.3500
  • 50000:$0.3440
BSC076N06NS3 G
DISTI # 726-BSC076N06NS3G		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		296
  • 1:$1.1200
  • 10:$0.9490
  • 100:$0.7290
  • 500:$0.6440
  • 1000:$0.5090
BSC076N06NS3GATMA1
DISTI # 726-BSC076N06NS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$1.1200
  • 10:$0.9490
  • 100:$0.7290
  • 500:$0.6440
  • 1000:$0.5090
BSC076N06NS3GATMA1
DISTI # 8259137P		Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TDSON8EP, RL800
  • 200:£0.5000
BSC076N06NS3GATMA1
DISTI # 2443422		Infineon Technologies AGMOSFET, N CH, 60V, 50A, TDSON-8
RoHS: Compliant		0
  • 5:£0.7130
  • 25:£0.6120
  • 100:£0.5100
  • 250:£0.5040
  • 500:£0.4970
BSC076N06NS3GATMA1
DISTI # 2443422		Infineon Technologies AGMOSFET, N CH, 60V, 50A, TDSON-8
RoHS: Compliant		0
  • 1:$1.7800
  • 10:$1.5100
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.8060
  • 5000:$0.7140
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可用性
庫存:
12
訂購:
1995
輸入數量:
BSC076N06NS3GATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.11
US$1.11
10
US$0.95
US$9.49
100
US$0.73
US$72.90
500
US$0.64
US$322.00
1000
US$0.51
US$509.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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