FDMC6679AZ

Mfr. #:: FDMC6679AZ
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET -30V P-Channel Power Trench
生命週期:: 製造商新產品
數據表:: FDMC6679AZ 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: Power-33-8

通道數：: 1 Channel

晶體管極性：: P-通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 20 A

Rds On - 漏源電阻：: 10 mOhms

Vgs th - 柵源閾值電壓：: 1.8 V

Vgs - 柵源電壓：: 25 V

Qg - 門電荷：: 37 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 41 W

配置：: 單身的

商品名：: 動力戰壕

打包：: 捲軸

高度：: 0.8 mm

長度：: 3.3 mm

系列：: FDMC6679AZ

晶體管類型：: 1 P-Channel

寬度：: 3.3 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 46 S

產品類別：: MOSFET

出廠包裝數量：: 3000

子類別：: MOSFET

單位重量：: 0.005832 oz

Tags: FDMC667, FDMC66, FDMC6, FDMC, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMC6679AZ 評級和評論

M***r

I order in same time with other cheaper shipping company. Arrived on same day!

2019-03-16

P***s

All OK

2019-02-09

A***v

The boards are good, everything is triggered by a short circuit, twists the interskol on the second transmission long self-tapping on hurray, also twists them. It took a long time, you need to collect goods for a large amount will send faster than 500 rubles

2019-07-05

I***h

Item not received

2019-05-20

FDMC6679AZ 描述

***itex: P-MOSFET transistor FDMC6679AZ Fairchild; -30V; -20A; 10mOhm; SMD MLP 3.3x3.3

***emi: P-Channel Power Trench® MOSFET -30V, -20A, 10mΩ

*** Source Electronics: Trans MOSFET P-CH Si 30V 11.5A 8-Pin WDFN EP T/R / MOSFET P-CH 30V POWER33

***rchild Semiconductor: The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

***nell: MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***icroelectronics: N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package

***ark: Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.06Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 12A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ical: Trans MOSFET N-CH 550V 2.4A 3-Pin(2+Tab) DPAK Tube

*** Electronics: COOLMOS N-CHANNEL POWER MOSFET

***va Crawler: N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package

***r Electronics: Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ment14 APAC: MOSFET, N CH, 600V, 1A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1A; Package / Case:IPAK; Power Dissipation Pd:30W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in DPAK package

***ure Electronics: N-Channel 525 V 2.6 Ohm Surface Mount SuperMesh III Power MosFet - TO-252

***r Electronics: Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ical: Trans MOSFET N-CH 700V 5.4A 3-Pin(3+Tab) TO-251 Tube

***ark: Mosfet, N-Ch, 700V, 5.4A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers

***ineon SCT: Single N-Channel 650 V 1.5 Ohm 9.4 nC CoolMOS Power Mosfet - TO-251, PG-TO251-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

Market price

型號	製造商	描述	庫存	價格
FDMC6679AZ DISTI # FDMC6679AZFSTR-ND	ON Semiconductor	MOSFET P-CH 30V POWER33 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.3896
FDMC6679AZ DISTI # FDMC6679AZFSCT-ND	ON Semiconductor	MOSFET P-CH 30V POWER33 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4300 500:$0.5446 100:$0.7023 10:$0.8890 1:$1.0000
FDMC6679AZ DISTI # FDMC6679AZFSDKR-ND	ON Semiconductor	MOSFET P-CH 30V POWER33 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4300 500:$0.5446 100:$0.7023 10:$0.8890 1:$1.0000
FDMC6679AZ DISTI # FDMC6679AZ	ON Semiconductor	Trans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R (Alt: FDMC6679AZ) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4879 6000:€0.3999 12000:€0.3659 18000:€0.3379 30000:€0.3139
FDMC6679AZ DISTI # FDMC6679AZ	ON Semiconductor	Trans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R - Tape and Reel (Alt: FDMC6679AZ) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3299 6000:$0.3279 12000:$0.3239 18000:$0.3199 30000:$0.3119
FDMC6679AZ DISTI # FDMC6679AZ	ON Semiconductor	Trans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R (Alt: FDMC6679AZ) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
FDMC6679AZ DISTI # 88T3264	ON Semiconductor	MOSFET, P CHANNEL, 30V, 20A, MLP 3.3X3.3,Transistor Polarity:P Channel,Continuous Drain Current Id:-20A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0086ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V RoHS Compliant: Yes	0	1:$0.8400 10:$0.7090 25:$0.6540 50:$0.5990 100:$0.5440 250:$0.5130 500:$0.4810 1000:$0.3800
FDMC6679AZ DISTI # 64R3011	ON Semiconductor	ST3 PCH WITH ZENER / REEL	0	1:$0.3560 9000:$0.3430 24000:$0.3330
FDMC6679AZ DISTI # 512-FDMC6679AZ	ON Semiconductor	MOSFET -30V P-Channel Power Trench RoHS: Compliant	396	1:$0.8400 10:$0.7090 100:$0.5440 500:$0.4810 1000:$0.3800 3000:$0.3370 9000:$0.3240
FDMC6679AZ DISTI # 7599522P	ON Semiconductor	MOSFET P-CHANNEL 30V 11.5A MLP8EP, RL	5735	50:£0.3840 750:£0.2600 1500:£0.2440 3000:£0.2380
FDMC6679AZ	Fairchild Semiconductor Corporation		5950
FDMC6679AZ DISTI # 2083251	ON Semiconductor	MOSFET, P CH, 30V, 20A, MLP 3.3X3.3 RoHS: Compliant	320	5:£0.6150 25:£0.5570 100:£0.4190 250:£0.3950 500:£0.3710
FDMC6679AZ DISTI # 2083251	ON Semiconductor	MOSFET, P CH, 30V, 20A, MLP 3.3X3.3 RoHS: Compliant	0	1:$1.3400 10:$1.1300 100:$0.8610 500:$0.7620 1000:$0.6020 3000:$0.5340 9000:$0.5130

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