IRF630NSPBF

Mfr. #:: IRF630NSPBF
製造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
生命週期:: 製造商新產品
數據表:: IRF630NSPBF 數據表
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HTML Datasheet:: IRF630NSPBF Datasheet IRF630NSPBF Datasheet (P4-P6)IRF630NSPBF Datasheet (P7-P9)IRF630NSPBF Datasheet (P10-P11)
ECAD Model:

產品屬性
屬性值

製造商: 紅外線

產品分類: FET - 單

打包: 管子

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 82 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 15 ns

上升時間: 14 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 9.5 A

Vds-漏-源-擊穿電壓: 200 V

Rds-On-Drain-Source-Resistance: 300 mOhms

晶體管極性: N通道

典型關斷延遲時間: 27 ns

典型開啟延遲時間: 7.9 ns

Qg-門電荷: 23.3 nC

通道模式: 增強

Tags: IRF630NS, IRF630N, IRF630, IRF63, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF630NSPBF 描述

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ow.cn: Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 82 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 200V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:94mJ; Capacitance Ciss Typ:575pF; Current Iar:9.3A; Current Id Max:9.3A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:15ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.83°C/W; N-channel Gate Charge:35nC; No. of Transistors:1; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:37A; Rise Time:14ns

Market price

型號	製造商	描述	庫存	價格
IRF630NSPBF DISTI # V36:1790_13890565	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube	7	100:$1.2055 25:$1.3058 10:$1.4732 1:$1.6815
IRF630NSPBF DISTI # IRF630NSPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 850 Container: Tube	Limited Supply - Call
IRF630NSPBF DISTI # C1S322000589278	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube RoHS: Compliant	7	10:$1.5584
IRF630NSPBF DISTI # 38K2816	Infineon Technologies AG	MOSFET Transistor, N Channel, 9.3 A, 200 V, 300 mohm, 10 V, 4 V , RoHS Compliant: Yes	0
IRF630NSPBF DISTI # 942-IRF630NSPBF	Infineon Technologies AG	MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC RoHS: Compliant	0
IRF630NSPBF	International Rectifier	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2539	1000:$0.6900 500:$0.7300 100:$0.7600 25:$0.7900 1:$0.8500
IRF630NSPBF	International Rectifier		29
IRF630NSPBF	International Rectifier	RoHS: Compliant	Europe - 47
IRF630NSTRLPBF DISTI # IRF630NSPBF-GURT	Infineon Technologies AG	N-Ch 200V 9,3A 82W 0,3R DPak RoHS: Compliant	360	10:€0.6660 50:€0.3960 200:€0.3060 500:€0.2950
IRF630NSPBF DISTI # 8648352	Infineon Technologies AG	MOSFET, N, 200V, 9.5A, D2-PAK RoHS: Compliant	2	1:$2.6200 10:$2.2400 100:$1.7800 500:$1.5700 1000:$1.3000 2500:$1.2800

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