IPB049N08N5ATMA1

Mfr. #:: IPB049N08N5ATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 80V TO263-3
生命週期:: 製造商新產品
數據表:: IPB049N08N5ATMA1 數據表
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更多信息:: IPB049N08N5ATMA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

部分別名: IPB049N08N5 SP001227052

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-263-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 125 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 7 ns

上升時間: 7 ns

VGS-柵極-源極-電壓: +/- 20 V

Id 連續漏極電流: 80 A

Vds-漏-源-擊穿電壓: 80 V

VGS-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 6.6 mOhms

晶體管極性: N通道

典型關斷延遲時間: 27 ns

典型開啟延遲時間: 17 ns

Qg-門電荷: 42 nC

正向跨導最小值: 52 S

通道模式: 增強

Tags: IPB049N0, IPB049, IPB04, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB049N08N5ATMA1 描述

***ical: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ark: Mosfet, N-Ch, 80V, 80A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB049N08N5ATMA1 更多信息

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

型號	製造商	描述	庫存	價格
IPB049N08N5ATMA1 DISTI # V72:2272_06383300	Infineon Technologies AG	Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	334	75000:$0.9624 30000:$0.9724 15000:$0.9824 6000:$0.9924 3000:$1.0026 1000:$1.0128 500:$1.1045 250:$1.2104 100:$1.2521 50:$1.3485 25:$1.4984 10:$1.5510 1:$1.7777
IPB049N08N5ATMA1 DISTI # IPB049N08N5ATMA1-ND	Infineon Technologies AG	MOSFET N-CH 80V TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.2344
IPB049N08N5ATMA1 DISTI # 26195151	Infineon Technologies AG	Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	334	500:$1.1045 250:$1.2104 100:$1.2521 50:$1.5149 25:$1.5328 10:$1.5511 7:$1.7777
IPB049N08N5ATMA1 DISTI # IPB049N08N5ATMA1	Infineon Technologies AG	MV POWER MOS - Tape and Reel (Alt: IPB049N08N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.1149 2000:$1.0739 4000:$1.0359 6000:$1.0009 10000:$0.9829
IPB049N08N5ATMA1 DISTI # SP001227052	Infineon Technologies AG	MV POWER MOS (Alt: SP001227052) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.2629 2000:€1.0519 4000:€0.9709 6000:€0.9019 10000:€0.8419
IPB049N08N5ATMA1 DISTI # 49AC0281	Infineon Technologies AG	MOSFET, N-CH, 80V, 80A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	928	1:$2.0900 10:$1.7800 25:$1.6600 50:$1.5400 100:$1.4200 250:$1.3400 500:$1.2500
IPB049N08N5ATMA1 DISTI # 726-IPB049N08N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 80V 80A D2PAK-2 RoHS: Compliant	537	1:$2.0900 10:$1.7800 100:$1.4200 500:$1.2500 1000:$1.0300
IPB049N08N5ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 80V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	1000	1000:$0.8800 500:$0.9300 100:$0.9700 25:$1.0100 1:$1.0900
IPB049N08N5ATMA1 DISTI # C1S322000625598	Infineon Technologies AG	MOSFETs	334	100:$1.2521 50:$1.5149 25:$1.5328 10:$1.5511
IPB049N08N5ATMA1 DISTI # 2839449	Infineon Technologies AG	MOSFET, N-CH, 80V, 80A, TO-263-3 RoHS: Compliant	928	5:$3.6500 25:$3.1800 100:$2.6000 250:$2.1900 500:$1.9000 1000:$1.7900 5000:$1.7000
IPB049N08N5ATMA1 DISTI # 2839449	Infineon Technologies AG	MOSFET, N-CH, 80V, 80A, TO-263-3 RoHS: Compliant	928	1:£2.2400 10:£1.7000 100:£1.3500

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