FDP3632

Mfr. #:: FDP3632
製造商:: ON Semiconductor
描述:: MOSFET N-CH 100V 80A TO-220AB
生命週期:: 製造商新產品
數據表:: FDP3632 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 仙童

產品分類: FET - 單

打包: 管子

部分別名: FDP3632_NL

單位重量: 0.063493 oz

安裝方式: 通孔

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 310 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 46 ns

上升時間: 39 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 80 A

Vds-漏-源-擊穿電壓: 100 V

Rds-On-Drain-Source-Resistance: 7.5 mOhms

晶體管極性: N通道

典型關斷延遲時間: 96 ns

典型開啟延遲時間: 30 ns

通道模式: 增強

Tags: FDP363, FDP36, FDP3, FDP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP3632 描述

***eco: Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3+Tab) TO-220AB Tube

***Semiconductor: N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10

***p One Stop Japan: Trans MOSFET N-CH 100V 12A Automotive 3-Pin(3+Tab) TO-220AB Tube

***ical: Trans MOSFET N-CH 100V 12A 3-Pin (3+Tab) TO-220AB Tube

***et Europe: Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 100 V 9 mOhm PowerTrench Mosfet - TO-220AB

***et: TO-220AB, SINGLE, N-CH, 100V, 9 MOHM PWR ULTRAFET TRENCH MOS

*** Source Electronics: MOSFET N-CH 100V 80A TO-220AB

***ark: Fet 100V 9.0 Mohm To220 Rohs Compliant: Yes

***ser: MOSFETs 100V, 80a .9 Ohms/VGS=1V

***Components: MOSFET Transistor

***ment14 APAC: N CH MOSFET, 100V, 80A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:820A; SMD Marking:FDP3632; Voltage Vgs Max:4V

Market price

型號	製造商	描述	庫存	價格
FDP3632 DISTI # FDP3632-ND	ON Semiconductor	MOSFET N-CH 100V 80A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	2208In Stock	1600:$1.7245 800:$1.8409 100:$2.4810 10:$3.0050 1:$3.3600
FDP3632 DISTI # FDP3632	ON Semiconductor	Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP3632) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 1400	1:$1.1900 10:$1.0900 25:$1.0900 50:$1.0900 100:$1.0900 500:$1.0900 1000:$1.0900
FDP3632	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	9511	1000:$1.3800 500:$1.4500 100:$1.5100 25:$1.5800 1:$1.7000
FDP3632 DISTI # 512-FDP3632	ON Semiconductor	MOSFET 100V 80a .9 Ohms/VGS=1V RoHS: Compliant	1048	1:$2.8100 10:$2.3900 100:$2.0700 250:$1.9600 500:$1.7600
FDP3632_Q DISTI # 512-FDP3632_Q	ON Semiconductor	MOSFET 100V 80a .9 Ohms/VGS=1V RoHS: Not compliant	0
FDP3632	Fairchild Semiconductor Corporation		22
FDP3632 DISTI # 6714828P	ON Semiconductor	MOSFET N-CHANNEL 100V 12A TO220AB, TU	12	10:£2.1500 20:£1.9400
FDP3632 DISTI # FDP3632	ON Semiconductor	Transistor: N-MOSFET,unipolar,100V,12A,310W,TO220AB	68	1:$3.9800 3:$3.4100 10:$2.7400 25:$2.4700
FDP3632	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 100
FDP3632 DISTI # 1095015	ON Semiconductor	RoHS: Compliant	0	500:$2.7900 250:$3.1000 100:$3.2800 10:$3.7800 1:$4.4500

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