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SIHG30N60E-GE3

SIHG30N60E-GE3
Mfr. #:
SIHG30N60E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs TO-247AC
生命週期:
製造商新產品
數據表:
SIHG30N60E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG30N60E-GE3 DatasheetSIHG30N60E-GE3 Datasheet (P4-P6)SIHG30N60E-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SIHG30N60E-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247AC-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
29 A
Rds On - 漏源電阻：
125 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
85 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
250 W
配置：
單身的
頻道模式：
增強
打包：
管子
系列：
E
品牌：
威世 / Siliconix
秋季時間：
36 ns
產品類別：
MOSFET
上升時間：
32 ns
出廠包裝數量：
500
子類別：
MOSFET
典型關斷延遲時間：
63 ns
典型的開啟延遲時間：
19 ns
單位重量：
1.340411 oz
Tags
SIHG30N60E, SIHG30, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHG30N60E-GE3
DISTI # V99:2348_09219139		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		389
  • 2500:$3.1150
  • 1000:$3.2160
  • 500:$3.6500
  • 250:$4.2360
  • 100:$4.3740
  • 10:$5.3010
  • 1:$6.9872
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		453In Stock
  • 2500:$3.2119
  • 500:$4.0089
  • 100:$4.7093
  • 25:$5.4336
  • 10:$5.7480
  • 1:$6.4000
SIHG30N60E-GE3
DISTI # 25872836		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		389
  • 2:$6.9872
SIHG30N60E-GE3
DISTI # 26884875		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		178
  • 19:$4.1692
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC (Alt: SIHG30N60E-GE3)
RoHS: Compliant
Min Qty: 500		Asia - 2500
  • 1000:$0.6737
  • 500:$0.7219
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Tape and Reel (Alt: SIHG30N60E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$2.8900
  • 3000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
  • 500:$3.2900
SIHG30N60E-GE3
DISTI # 68W7051		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 68W7051)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 500:$4.8000
  • 100:$5.5000
  • 50:$5.8900
  • 25:$6.2900
  • 10:$6.6800
  • 1:$8.0600
SIHG30N60E-GE3
DISTI # 68W7051		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 29A, TO-247AC-3,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes178
  • 1:$2.7100
  • 10:$2.7100
  • 25:$2.7100
  • 50:$2.7100
  • 100:$2.7100
  • 500:$2.7100
SIHG30N60E-E3
DISTI # 781-SIHG30N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		327
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$4.1900
  • 1000:$3.5900
  • 2500:$3.0500
SIHG30N60E-GE3
DISTI # 78-SIHG30N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		49
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
SIHG30N60E-GE3
DISTI # 7879421P		Vishay IntertechnologiesMOSFET N-CH 600V 29A LOW FOM TO247AC, RL419
  • 5:£1.9800
SIHG30N60E-GE3
DISTI # 7879421		Vishay IntertechnologiesMOSFET N-CH 600V 29A LOW FOM TO247AC, EA28
  • 5:£1.9800
  • 1:£2.0300
SIHG30N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
    RoHS: Compliant    		Americas -
      SIHG30N60E-GE3
      DISTI # 2364082      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, TO-247
      RoHS: Compliant      		52
      • 2500:$4.8600
      • 500:$6.0500
      • 100:$7.1000
      • 25:$8.1900
      • 10:$8.6700
      • 1:$9.6400
      SIHG30N60E-GE3
      DISTI # 2364082      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, TO-2475925
      • 500:£3.0300
      • 250:£3.2700
      • 100:£3.3800
      • 10:£4.1000
      • 1:£5.4600
      圖片 型號 描述
      VS-30TPS12LHM3

      Mfr.#: VS-30TPS12LHM3

      OMO.#: OMO-VS-30TPS12LHM3

      		 SCRs 20A If; 1200V Vr TO-247AD 3L
      SUP90330E-GE3

      Mfr.#: SUP90330E-GE3

      OMO.#: OMO-SUP90330E-GE3

      		 MOSFET 200V Vds 20V Vgs TO-220AB
      STW35N60DM2

      Mfr.#: STW35N60DM2

      OMO.#: OMO-STW35N60DM2

      		 MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
      FQA11N90-F109

      Mfr.#: FQA11N90-F109

      OMO.#: OMO-FQA11N90-F109

      		 MOSFET 900V N-Channel QFET
      FDPF15N65

      Mfr.#: FDPF15N65

      OMO.#: OMO-FDPF15N65

      		 MOSFET 650V 15A 0.44OHMS NCH POWER TRENCH
      SDUFD51-008G

      Mfr.#: SDUFD51-008G

      OMO.#: OMO-SDUFD51-008G

      		 USB Flash Drives 8GB USB 2.0 Flash Drive
      177918-1

      Mfr.#: 177918-1

      OMO.#: OMO-177918-1

      		 Headers & Wire Housings PWR DBL LCK PLATE 2P
      FQA11N90-F109

      Mfr.#: FQA11N90-F109

      OMO.#: OMO-FQA11N90-F109-ON-SEMICONDUCTOR

      		 MOSFET N-CH 900V 11.4A TO-3P
      VS-30TPS12LHM3

      Mfr.#: VS-30TPS12LHM3

      OMO.#: OMO-VS-30TPS12LHM3-VISHAY

      		 THYRISTOR - TO-247-E3
      SDUFD51-008G

      Mfr.#: SDUFD51-008G

      OMO.#: OMO-SDUFD51-008G-105

      		 Memory Modules USB Flash Drives USB Flash Drives
      可用性
      庫存:
      29
      訂購:
      2012
      輸入數量:
      SIHG30N60E-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$6.44
      US$6.44
      10
      US$5.33
      US$53.30
      100
      US$4.39
      US$439.00
      250
      US$4.25
      US$1 062.50
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
      從...開始
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