IPB65R150CFDATMA1

IPB65R150CFDATMA1
Mfr. #:
IPB65R150CFDATMA1
製造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 700V 72A D2PAK-2
生命週期:
製造商新產品
數據表:
IPB65R150CFDATMA1 數據表
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IPB65R150CFDATMA1 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
系列
IPB65R150
打包
捲軸
部分別名
IPB65R150CFD IPB65R150CFDXT SP000907034
單位重量
0.068654 oz
安裝方式
貼片/貼片
商品名
酷摩
包裝盒
TO-263-3
技術
通道數
1 Channel
晶體管型
1 N-Channel
鈀功耗
195.3 W
Id 連續漏極電流
72 A
Vds-漏-源-擊穿電壓
700 V
Rds-On-Drain-Source-Resistance
150 mOhms
晶體管極性
N通道
Tags
IPB65R150CFDAT, IPB65R150CFDA, IPB65R15, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS™ Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) TO-263 T/R
***et Europe
Trans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263
***et
Trans MOSFET N-CH 650V 22.4A 3-Pin TO-263 T/R
***ronik
N-CH 700V 22,4A 150mOhm TO263-3
***i-Key
HIGH POWER_LEGACY
***ark
Mosfet, N-Ch, 650V, 22.4A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 650V, 22.4A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:-; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 650V, 22.4A, TO-263-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:22.4A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.135ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:-; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:CoolMOS CFD2 Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB65R150CFDATMA1
DISTI # IPB65R150CFDATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$2.0393
IPB65R150CFDATMA1
DISTI # IPB65R150CFDATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$2.4905
  • 100:$3.0757
  • 10:$3.7510
  • 1:$4.2000
IPB65R150CFDATMA1
DISTI # IPB65R150CFDATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$2.4905
  • 100:$3.0757
  • 10:$3.7510
  • 1:$4.2000
IPB65R150CFDATMA1
DISTI # IPB65R150CFDATMA1
Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB65R150CFDATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.8900
  • 2000:$1.7900
  • 4000:$1.6900
  • 6000:$1.6900
  • 10000:$1.5900
IPB65R150CFDATMA1
DISTI # SP000907034
Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263 (Alt: SP000907034)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€1.7900
  • 2000:€1.6900
  • 4000:€1.5900
  • 6000:€1.4900
  • 10000:€1.3900
IPB65R150CFDATMA1
DISTI # 13AC9033
Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1:$3.5100
  • 10:$2.9800
  • 25:$2.8500
  • 50:$2.7200
  • 100:$2.5900
  • 250:$2.4500
  • 500:$2.2000
IPB65R150CFD
DISTI # 726-IPB65R150CFD
Infineon Technologies AGMOSFET N-Ch 700V 72A D2PAK-2
RoHS: Compliant
272
  • 1:$3.5100
  • 10:$2.9800
  • 100:$2.5900
  • 250:$2.4500
  • 500:$2.2000
  • 1000:$1.8600
IPB65R150CFDATMA1
DISTI # 726-IPB65R150CFDATMA
Infineon Technologies AGMOSFET N-Ch 700V 72A D2PAK-2
RoHS: Compliant
0
  • 1:$3.5100
  • 10:$2.9800
  • 100:$2.5900
  • 250:$2.4500
  • 500:$2.2000
  • 1000:$1.8600
IPB65R150CFDATMA1
DISTI # 2726047
Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-263-3
RoHS: Compliant
0
  • 1:£3.0400
  • 10:£2.2900
  • 100:£1.9900
  • 250:£1.8900
  • 500:£1.7000
IPB65R150CFDATMA1
DISTI # 2726047
Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-263-3
RoHS: Compliant
0
  • 1:$6.7000
  • 10:$5.9800
  • 100:$4.9100
圖片 型號 描述
IPB65R150CFDATMA1

Mfr.#: IPB65R150CFDATMA1

OMO.#: OMO-IPB65R150CFDATMA1

MOSFET N-Ch 700V 72A D2PAK-2
IPB65R150CFD

Mfr.#: IPB65R150CFD

OMO.#: OMO-IPB65R150CFD

MOSFET N-Ch 700V 72A D2PAK-2
IPB65R150CFDAATMA1

Mfr.#: IPB65R150CFDAATMA1

OMO.#: OMO-IPB65R150CFDAATMA1

MOSFET N-Ch 650V 72A D2PAK-2
IPB65R150CFDATMA2

Mfr.#: IPB65R150CFDATMA2

OMO.#: OMO-IPB65R150CFDATMA2

MOSFET
IPB65R150CFDATMA1-CUT TAPE

Mfr.#: IPB65R150CFDATMA1-CUT TAPE

OMO.#: OMO-IPB65R150CFDATMA1-CUT-TAPE-1190

全新原裝
IPB65R150CFDATMA2

Mfr.#: IPB65R150CFDATMA2

OMO.#: OMO-IPB65R150CFDATMA2-INFINEON-TECHNOLOGIES

HIGH POWER_LEGACY
IPB65R150CFD

Mfr.#: IPB65R150CFD

OMO.#: OMO-IPB65R150CFD-1190

Transistor MOSFET N-CH 700V 22.4A 3-Pin TO-263 T/R (Alt: IPB65R150CFD)
IPB65R150CFDA

Mfr.#: IPB65R150CFDA

OMO.#: OMO-IPB65R150CFDA-1190

全新原裝
IPB65R150CFDAATMA1

Mfr.#: IPB65R150CFDAATMA1

OMO.#: OMO-IPB65R150CFDAATMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 650V 72A D2PAK-2
IPB65R150CFDATMA1

Mfr.#: IPB65R150CFDATMA1

OMO.#: OMO-IPB65R150CFDATMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 700V 72A D2PAK-2
可用性
庫存:
Available
訂購:
3000
輸入數量:
IPB65R150CFDATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.37
US$2.37
10
US$2.25
US$22.51
100
US$2.13
US$213.24
500
US$2.01
US$1 006.95
1000
US$1.90
US$1 895.50
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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