QPD0050TR7

Mfr. #:: QPD0050TR7
製造商:: Qorvo
描述:: RF JFET Transistors DC-3.6GHz GaN 75W 48V
生命週期:: 製造商新產品
數據表:: QPD0050TR7 數據表
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ECAD Model:
更多信息:: QPD0050TR7 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

技術：: 氮化鎵

獲得：: 19.4 dB

輸出功率：: 75 W

最低工作溫度：: - 40 C

安裝方式：: 貼片/貼片

包裝/案例：: DFN-6

打包：: 捲軸

應用：: 微蜂窩基站，W-CDMA / LTE

配置：: 單身的

工作頻率：: DC to 3.6 GHz

系列：: QPD

品牌：: 科沃

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 250

子類別：: 晶體管

第 # 部分別名：: 1132691

Tags: QPD005, QPD0, QPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD0050TR7 更多信息

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

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