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IRF7379TRPBF

IRF7379TRPBF
Mfr. #:
IRF7379TRPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT DUAL N/PCh 30V 5.8A
生命週期:
製造商新產品
數據表:
IRF7379TRPBF 數據表
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HTML Datasheet:
IRF7379TRPBF DatasheetIRF7379TRPBF Datasheet (P4-P6)IRF7379TRPBF Datasheet (P7-P9)IRF7379TRPBF Datasheet (P10)
ECAD Model:
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IRF7379TRPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SO-8
通道數：
2 Channel
晶體管極性：
N溝道，P溝道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
5.8 A
Rds On - 漏源電阻：
75 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
16.7 nC
Pd - 功耗：
2.5 W
配置：
雙重的
打包：
捲軸
高度：
1.75 mm
長度：
4.9 mm
晶體管類型：
1 N-Channel, 1 P-Channel
寬度：
3.9 mm
品牌：
英飛凌科技
產品類別：
MOSFET
出廠包裝數量：
4000
子類別：
MOSFET
第 # 部分別名：
SP001571968
單位重量：
0.019048 oz
Tags
IRF7379, IRF737, IRF73, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
***et
Trans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.8A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***et
Trans MOSFET N-CH 30V 4.9A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, DUAL N-CHANNEL, 30V, 4.9A, SO-8, Q101 QUALIFIED
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.9A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V
*** Source Electronics
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
***eco
Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC
***ure Electronics
Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ter Electronics
MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***ure Electronics
Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8
***des Inc SCT
30V SO8 Complementary dual enhancement mode MOSFET, N+P, 30V VDS, 20±V VGS
***et
Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SO T/R
***ark
Mosfet, Dual, N/p-Ch, 30V, 7.3A Rohs Compliant: Yes
***ronik
CMOS 30V 7,3/5,3A 24mOhm SO-8 RoHSconf
***ment14 APAC
MOSFET, DUAL, N/P-CH, 30V, 7.3A;
***et
Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, DUAL P-CHANNEL, -30V, 4.9A, SO-8, HALOGEN-FREE
*** Electronic Components
IGBT Transistors MOSFET MOSFT DUAL PCh -30V 4.9A
***S
French Electronic Distributor since 1988
***ark
DUAL P CH MOSFET, -30V, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
***et Japan
Transistor MOSFET Array Dual P-CH 30V 4.9A 8-Pin SOIC T/R
***des Inc SCT
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***nell
MOSFET, DUAL P-CH, -30V, -3.9A, SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -3.9A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
MOSFET P-Ch 30V 3.9A Enhancement SOIC8
***ical
Trans MOSFET P-CH 30V 3.9A Automotive 8-Pin SO T/R
***ronik
Dual P-CH -30V -3,9A 70mOhm SO8
***(Formerly Allied Electronics)
MOSFET P-Ch 30V 3.8A Enhancement SOIC8
***et
Trans MOSFET P-CH 30V 3.8A 8-Pin SO T/R
***ark
Mosfet, P-Ch, 30V, 3.8A, Soic Rohs Compliant: Yes
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型號 製造商 描述 庫存 價格
IRF7379TRPBF
DISTI # IRF7379PBFCT-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3018In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
IRF7379TRPBF
DISTI # IRF7379PBFDKR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3018In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
IRF7379TRPBF
DISTI # IRF7379PBFTR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.3788
IRF7379TRPBF
DISTI # IRF7379TRPBF		Infineon Technologies AGTrans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7379TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2729
  • 8000:$0.2629
  • 16000:$0.2539
  • 24000:$0.2449
  • 40000:$0.2409
IRF7379TRPBF
DISTI # 34AC1779		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC,Transistor Polarity:N and P Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3390
  • 1:$0.8900
  • 10:$0.7370
  • 25:$0.6500
  • 50:$0.5620
  • 100:$0.4750
  • 250:$0.4430
  • 500:$0.4120
  • 1000:$0.3800
IRF7379TRPBF
DISTI # 70018897		Infineon Technologies AGMOSFET,DUAL N/P-CHANNEL,30V,5.8A,SO-8
RoHS: Compliant		0
  • 4000:$1.2600
  • 8000:$1.2350
  • 20000:$1.1970
  • 40000:$1.1470
  • 100000:$1.0710
IRF7379TRPBF
DISTI # 942-IRF7379TRPBF		Infineon Technologies AGMOSFET MOSFT DUAL N/PCh 30V 5.8A
RoHS: Compliant		3835
  • 1:$0.8900
  • 10:$0.7370
  • 100:$0.4750
  • 1000:$0.3800
  • 4000:$0.3210
  • 8000:$0.3090
  • 24000:$0.2970
IRF7379TRPBF
DISTI # 2781211		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC
RoHS: Compliant		3390
  • 5:$1.2300
  • 25:$1.0700
  • 100:$0.8750
  • 250:$0.7390
  • 500:$0.6400
  • 1000:$0.6050
  • 5000:$0.5730
IRF7379TRPBF
DISTI # 2781211		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC
RoHS: Compliant		3390
  • 5:£0.8360
  • 25:£0.7520
  • 100:£0.5790
  • 250:£0.5040
  • 500:£0.4290
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REF3030AIDBZR

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OMO.#: OMO-REF3030AIDBZR

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Mfr.#: UCC2808DTR-2

OMO.#: OMO-UCC2808DTR-2

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Mfr.#: 53253-1270

OMO.#: OMO-53253-1270

 Headers & Wire Housings 2mm MicroLatch Vrt Square Pin 12Ckt
MIC4426YM

Mfr.#: MIC4426YM

OMO.#: OMO-MIC4426YM-MICROCHIP-TECHNOLOGY

 Gate Drivers 1.5A Dual High Speed MOSFET Driver (Pb-free)
REF3030AIDBZR

Mfr.#: REF3030AIDBZR

OMO.#: OMO-REF3030AIDBZR-TEXAS-INSTRUMENTS

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RC0402JR-13330RL

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 Res Thick Film 0402 330 Ohm 5% 0.063W(1/16W) ±100ppm/C Molded SMD Paper T/R
可用性
庫存:
Available
訂購:
1987
輸入數量:
IRF7379TRPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.89
US$0.89
10
US$0.74
US$7.37
100
US$0.48
US$47.50
1000
US$0.38
US$380.00
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