FF200R12KT3EHOSA1

Mfr. #:: FF200R12KT3EHOSA1
製造商:: Infineon Technologies
描述:: IGBT MODULE VCES 1200V 200A
生命週期:: 製造商新產品
數據表:: FF200R12KT3EHOSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FF200R12KT3EHOSA1 Datasheet FF200R12KT3EHOSA1 Datasheet (P4-P6)FF200R12KT3EHOSA1 Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

Tags: FF200R12KT3, FF200R12KT, FF200R12K, FF200R12, FF200R1, FF200R, FF200, FF20, FF2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF200R12KT3EHOSA1 描述

***ical: Trans IGBT Module N-CH 1200V 295A 1050000mW 7-Pin 62MM-1 Tray

***et: Transistor IGBT Module N-CH 1200V 295A 20V Screw Mount Tray

***ineon SCT: Our well-known 62 mm 1200 V Common Emitter IGBT modules with fast trench/fieldstop IGBT, AG-62MM-1-7, RoHS

***ineon: Our well-known 62 mm 1200V 3-level IGBT modules with common emitter and fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200V 62 mm dual modules. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; ups; induction-heating

Market price

型號	製造商	描述	庫存	價格
FF200R12KT3EHOSA1 DISTI # V36:1790_17558300	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 295A 1050000mW 7-Pin Tray RoHS: Compliant	250	100:$87.3600 25:$94.6000 10:$105.1100 1:$116.7800
FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 10 Container: Bulk	Temporarily Out of Stock	10:$103.6880
FF200R12KT3EHOSA1 DISTI # 30539555	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 295A 1050000mW 7-Pin Tray RoHS: Compliant	250	1:$116.7800
FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1	Infineon Technologies AG	MEDIUM POWER 62MM - Bulk (Alt: FF200R12KT3EHOSA1) Min Qty: 4 Container: Bulk	Americas - 0	40:$83.5900 20:$85.0900 12:$88.0900 8:$91.3900 4:$94.7900
FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1	Infineon Technologies AG	MEDIUM POWER 62MM - Trays (Alt: FF200R12KT3EHOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$84.8900 60:$86.9900 40:$89.1900 20:$91.5900 10:$92.7900
FF200R12KT3_E DISTI # 641-FF200R12KT3_E	Infineon Technologies AG	IGBT Modules IGBT 1200V 200A	4	1:$112.8500 5:$110.7800 10:$105.7900 25:$102.2800 50:$102.2700
FF200R12KT3EHOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	4	1000:$86.6200 500:$91.1800 100:$94.9200 25:$98.9900 1:$106.6100
FF200R12KT3EHOSA1 DISTI # 8386894	Infineon Technologies AG	IGBT MODULE N-CH 1.2KV 295A AG-62MM-1, EA	9	25:£77.0200 10:£79.0000 5:£81.0800 1:£83.2700

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