TK380A60Y,S4X

Mfr. #:: TK380A60Y,S4X
製造商:: Toshiba
描述:: MOSFET N-Ch DTMOSV 600V 30W 590pF 9.7A
生命週期:: 製造商新產品
數據表:: TK380A60Y,S4X 數據表
交貨:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: TK380A60Y,S4X Datasheet TK380A60Y,S4X Datasheet (P4-P6)TK380A60Y,S4X Datasheet (P7-P9)TK380A60Y,S4X Datasheet (P10)
ECAD Model:
更多信息:: TK380A60Y,S4X 更多信息

產品屬性
屬性值

製造商：: 東芝

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220SIS-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 9.7 A

Rds On - 漏源電阻：: 290 mOhms

Vgs th - 柵源閾值電壓：: 3 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 20 nC

最低工作溫度：: -

最高工作溫度：: + 150 C

Pd - 功耗：: 30 W

配置：: 單身的

頻道模式：: 增強

商品名：: DTMOSV

打包：: 管子

系列：: TK380A60Y

晶體管類型：: 1 N-Channel

品牌：: 東芝

秋季時間：: 8.2 ns

產品類別：: MOSFET

上升時間：: 23 ns

出廠包裝數量：: 50

子類別：: MOSFET

典型關斷延遲時間：: 150 ns

典型的開啟延遲時間：: 60 ns

單位重量：: 0.068784 oz

Tags: TK380A60, TK380A, TK380, TK38, TK3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TK380A60Y,S4X 描述

***ark: X35 Pb-F Power Mosfet Transistor To-220Sis Pd=30W F=1Mhz Rohs Compliant: Yes

***ical: Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube

***et: Power MOSFET N-Channel 600V 9.7A 3-Pin SC-67 Tube

***i-Key: MOSFET N-CH 600V 9.7A TO220SIS

TK380A60Y,S4X 更多信息

DTMOS V Super Junction MOSFETs: Toshiba DTMOS V Super Junction MOSFETs are the next generation of N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOS V operates with lower EMI noise, and a 17% reduction On Resistance RDS(ON) compared to the DTMOS IV MOSFETs. The DTMOS V has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOS V Super Junction MOSFETs are ideal to improve the performance, and facilitate the design of power conversion applications. Applications that include switching power supplies, power factor correction (PFC) designs, and LED lighting. Learn More

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