SCTW90N65G2V

Name: STMicroelectronics - SCTW90N65G2V
Brand: STMicroelectronics
SKU: OMO-2800161
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SCTW90N65G2V
製造商:: STMicroelectronics
描述:: SILICON CARBIDE POWER MOSFET 650
生命週期:: 製造商新產品
數據表:: SCTW90N65G2V 數據表
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更多信息:: SCTW90N65G2V 更多信息 SCTW90N65G2V Product Details

產品屬性
屬性值

Tags: SCTW, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCTW90N65G2V 描述

***va Crawler: Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

***ow.cn: Trans MOSFET N-CH SiC 650V 119A Automotive 3-Pin(3+Tab) HIP-247 Tube

***ure Electronics: N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247

***nell: MOSFET, N-CH, 650V, 119A, 200DEG C, 565W;

***et: N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET

***icroelectronics SCT: SiC MOSFETs, 650V ,119A, 24mΩ, HIP247

SCTW90N65G2V 更多信息

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

650 Silicon-Carbide (SiC) MOSFETs: STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.

Market price

型號	製造商	描述	庫存	價格
SCTW90N65G2V DISTI # V36:1790_17702706	STMicroelectronics	N-channel 650 V SiC MOSFET	0
SCTW90N65G2V DISTI # 497-18351-ND	STMicroelectronics	SILICON CARBIDE POWER MOSFET 650 RoHS: Compliant Container: Tube	Temporarily Out of Stock
SCTW90N65G2V DISTI # SCTW90N65G2V	STMicroelectronics	N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V) RoHS: Not Compliant Min Qty: 30 Container: Tube	Americas - 0	300:$38.2900 150:$39.0900 90:$40.8900 60:$42.7900 30:$44.8900
SCTW90N65G2V DISTI # 02AH6930	STMicroelectronics	PTD WBG & POWER RF	0	1:$37.5000
SCTW90N65G2V DISTI # 511-SCTW90N65G2V	STMicroelectronics	MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package RoHS: Compliant	0	1:$49.5000 5:$48.3900 10:$46.5000