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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BUZ31 H3045A DISTI # BUZ31H3045ACT-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1076In Stock |
|
| BUZ31 H3045A DISTI # BUZ31H3045ADKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1076In Stock |
|
| BUZ31 H3045A DISTI # BUZ31H3045ATR-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 1000In Stock |
|
| BUZ31HXKSA1 DISTI # BUZ31HXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| BUZ31H3046XKSA1 DISTI # BUZ31H3046XKSA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO262-3 RoHS: Compliant Min Qty: 1000 Container: Tube | Limited Supply - Call | |
| BUZ31H3046 DISTI # BUZ31H3046 | Infineon Technologies AG | Power Transistor N Channel Enhancement 200V 14.5A 3-Pin TO-262 Through Hole - Bulk (Alt: BUZ31H3046) Min Qty: 500 Container: Bulk | Americas - 0 |
|
| BUZ31HXKSA1 DISTI # BUZ31HXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 14.5A 3-Pin TO-220 - Bulk (Alt: BUZ31HXKSA1) RoHS: Compliant Min Qty: 500 Container: Bulk | Americas - 0 |
|
| BUZ31H3046XKSA1 DISTI # BUZ31H3046XKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 14.5A 3-Pin TO-262 Tube - Bulk (Alt: BUZ31H3046XKSA1) Min Qty: 500 Container: Bulk | Americas - 0 |
|
| BUZ31 H DISTI # 726-BUZ31H | Infineon Technologies AG | MOSFET N-Ch 200V 14.5A TO220FP-3 RoHS: Compliant | 0 | |
| BUZ31H3046XKSA1 DISTI # 726-BUZ31H3046XKSA1 | Infineon Technologies AG | MOSFET N-Ch 200V 14.5A I2PAK-3 RoHS: Compliant | 143 |
|
| BUZ31 H3045A DISTI # 726-BUZ31H3045A | Infineon Technologies AG | MOSFET N-Ch 200V 14.5A D2PAK-2 RoHS: Compliant | 0 | |
| BUZ31H3046 | Infineon Technologies AG | Infineon N-Channel Power MOSFETBUZ31 - TO262 RoHS: Not Compliant | 700 |
|
| BUZ31HXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 6500 |
|
| BUZ31H3046XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 8791 |
|
| BUZ31H | Infineon Technologies AG | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 146 |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: BUZ216 OMO.#: OMO-BUZ216-1190 |
全新原裝 |
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Mfr.#: BUZ305 OMO.#: OMO-BUZ305-1190 |
全新原裝 |
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Mfr.#: BUZ30A. OMO.#: OMO-BUZ30A--1190 |
Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUZ326 OMO.#: OMO-BUZ326-1190 |
全新原裝 |
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Mfr.#: BUZ351 OMO.#: OMO-BUZ351-1190 |
全新原裝 |
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Mfr.#: BUZ36 OMO.#: OMO-BUZ36-1190 |
Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE |
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Mfr.#: BUZ45B OMO.#: OMO-BUZ45B-1190 |
全新原裝 |
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Mfr.#: BUZ54C OMO.#: OMO-BUZ54C-1190 |
全新原裝 |
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Mfr.#: BUZ90 OMO.#: OMO-BUZ90-1190 |
4 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Mfr.#: BUZ91A-E3045A OMO.#: OMO-BUZ91A-E3045A-1190 |
全新原裝 |