MMBT5550LT3G

Mfr. #:: MMBT5550LT3G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT SS HV XSTR NPN 160V
生命週期:: 製造商新產品
數據表:: MMBT5550LT3G 數據表
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HTML Datasheet:: MMBT5550LT3G Datasheet MMBT5550LT3G Datasheet (P4-P6)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: SOT-23-3

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 140 V

集電極-基極電壓 VCBO：: 160 V

發射極基極電壓 VEBO：: 6 V

集電極-發射極飽和電壓：: 0.15 V

最大直流集電極電流：: 0.06 A

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: MMBT5550L

高度：: 0.94 mm

長度：: 2.9 mm

打包：: 捲軸

寬度：: 1.3 mm

品牌：: 安森美半導體

連續集電極電流：: 600 mA

DC 集電極/基極增益 hfe 最小值：: 60

Pd - 功耗：: 225 mW

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 10000

子類別：: 晶體管

單位重量：: 0.000282 oz

Tags: MMBT5550LT, MMBT5550L, MMBT5550, MMBT555, MMBT55, MMBT5, MMBT, MMB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MMBT5550LT3G 描述

*** Stop Electro: Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

***Yang: Trans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R - Tape and Reel

***emi: High Voltage NPN Bipolar Transistor

***enic: 140V 225mW 600mA 60@10mA5V NPN 250mV@50mA5mA -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

***ark: BIPOLAR TRANSISTOR, NPN, 140V; Transistor Polarity:NPN; Collector Emitter Voltage Max:140V; Continuous Collector Current:600mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

***(Formerly Allied Electronics): ON Semi MMBT5551LT1G NPN Bipolar Transistor; 0.06 A; 160 V; 3-Pin SOT-23

***enic: 160V 225mW 600mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

***Yang: Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R - Tape and Reel

***ure Electronics: MMBT5551L Series 160 V 600 mA Surface Mount NPN Transistor - SOT-23

***roFlash: Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

***Parts: Transistor NPN, SOT-23-3 (TO-236) 160V 600mASurface Mount

***emi: High Voltage NPN Bipolar Transistor

***ponent Stockers USA: 60 mA 160 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB

***nell: TRANSISTOR, NPN, 160V, 600MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; Tran

***(Formerly Allied Electronics): ON Semi MMBT5551LT3G NPN Bipolar Transistor; 0.6 A; 160 V; 3-Pin SOT-23

***Yang: Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R - Tape and Reel

***ure Electronics: MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23

***roFlash: Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

***emi: High Voltage NPN Bipolar Transistor

***ponent Stockers USA: 60 mA 160 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB

***ark: Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:600mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:-; DC Current Gain hFE Min:80hFE RoHS Compliant: Yes

***(Formerly Allied Electronics): ON Semi MMBTH10LT1G NPN RF Bipolar Transistor; 0.004 A; 25 V; 3-Pin SOT-23

*** Source Electronics: TRANS SS VHF MIXER NPN 25V SOT23 / Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R

***ure Electronics: MMBTH Series 25 V 100 nA Surface Mount NPN Silicon VHF/UHF Transistor - SOT-23

***emi: NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236

***enic: 25V 225mW 60@4mA10V 650MHz 500mV@4A400mA NPN -55¡Í~+150¡Í@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, NPN, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 225mW; DC Collector Current: 4mA; DC Current Gain hFE: 60hFE; Transistor Cas

Market price

型號	製造商	描述	庫存	價格
MMBT5550LT3G DISTI # V72:2272_07304853	ON Semiconductor	Trans GP BJT NPN 140V 0.6A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	6019	6000:$0.0301 3000:$0.0348 1000:$0.0395 500:$0.0485 250:$0.0539 100:$0.0658 25:$0.1674 10:$0.1860 1:$0.2090
MMBT5550LT3G DISTI # V36:1790_07304853	ON Semiconductor	Trans GP BJT NPN 140V 0.6A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	0
MMBT5550LT3G DISTI # MMBT5550LT3GOSCT-ND	ON Semiconductor	TRANS NPN 140V 0.6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	21334In Stock	1000:$0.0448 500:$0.0657 100:$0.1067 10:$0.1960 1:$0.2100
MMBT5550LT3G DISTI # MMBT5550LT3GOSDKR-ND	ON Semiconductor	TRANS NPN 140V 0.6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	21334In Stock	1000:$0.0448 500:$0.0657 100:$0.1067 10:$0.1960 1:$0.2100
MMBT5550LT3G DISTI # MMBT5550LT3GOSTR-ND	ON Semiconductor	TRANS NPN 140V 0.6A SOT-23 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	20000In Stock	250000:$0.0193 100000:$0.0217 50000:$0.0232 30000:$0.0261 10000:$0.0290
MMBT5550LT3G DISTI # 30580379	ON Semiconductor	Trans GP BJT NPN 140V 0.6A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	16030	1450:$0.0176
MMBT5550LT3G DISTI # 25774585	ON Semiconductor	Trans GP BJT NPN 140V 0.6A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	6019	6000:$0.0316 3000:$0.0371 1000:$0.0425 500:$0.0521 250:$0.0579 221:$0.0644
MMBT5550LT3G DISTI # MMBT5550LT3G	ON Semiconductor	Trans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R (Alt: MMBT5550LT3G) RoHS: Compliant Min Qty: 10000 Container: Tape and Reel	Europe - 0	100000:€0.0151 60000:€0.0163 40000:€0.0193 20000:€0.0236 10000:€0.0303
MMBT5550LT3G DISTI # MMBT5550LT3G	ON Semiconductor	Trans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R - Bulk (Alt: MMBT5550LT3G) RoHS: Compliant Min Qty: 12500 Container: Bulk	Americas - 0	125000:$0.0247 62500:$0.0253 37500:$0.0256 25000:$0.0260 12500:$0.0261
MMBT5550LT3G DISTI # MMBT5550LT3G	ON Semiconductor	Trans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBT5550LT3G) RoHS: Compliant Min Qty: 10000 Container: Reel	Americas - 0	100000:$0.0153 60000:$0.0157 40000:$0.0158 20000:$0.0160 10000:$0.0162
MMBT5550LT3G DISTI # 83K8579	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 140V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:140V,Transition Frequency ft:-,Power Dissipation Pd:225mW,DC Collector Current:600mA,DC Current Gain hFE:60hFE,No. of Pins:3Pins RoHS Compliant: Yes	0	30000:$0.0270 15000:$0.0280 1000:$0.0300 500:$0.0600 250:$0.0620 100:$0.0640 50:$0.1780 1:$0.2160
MMBT5550LT1G DISTI # 863-MMBT5550LT1G	ON Semiconductor	Bipolar Transistors - BJT SS HV XSTR NPN 160V RoHS: Compliant	116975	1:$0.1800 10:$0.1610 100:$0.0570 1000:$0.0380 3000:$0.0290 9000:$0.0250 24000:$0.0230 45000:$0.0200
MMBT5550LT3G DISTI # 863-MMBT5550LT3G	ON Semiconductor	Bipolar Transistors - BJT SS HV XSTR NPN 160V RoHS: Compliant	15731	1:$0.2000 10:$0.1780 100:$0.0630 1000:$0.0420 2500:$0.0320 10000:$0.0280 20000:$0.0250 50000:$0.0230
MMBT5550LT3G	ON Semiconductor	Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB RoHS: Compliant	3080000	1:$0.0300 25:$0.0300 100:$0.0300 500:$0.0300 1000:$0.0300

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