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IRF5305STRLPBF

IRF5305STRLPBF
Mfr. #:
IRF5305STRLPBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
生命週期:
製造商新產品
數據表:
IRF5305STRLPBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
55 V
Id - 連續漏極電流：
31 A
Rds On - 漏源電阻：
60 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
42 nC
Pd - 功耗：
110 W
配置：
單身的
打包：
捲軸
高度：
2.3 mm
長度：
6.5 mm
晶體管類型：
1 P-Channel
寬度：
6.22 mm
品牌：
英飛凌/紅外
產品類別：
MOSFET
出廠包裝數量：
800
子類別：
MOSFET
第 # 部分別名：
SP001564840
單位重量：
0.139332 oz
Tags
IRF5305STRLPBF, IRF5305STRLP, IRF5305STRL, IRF5305STR, IRF5305ST, IRF5305S, IRF5305, IRF530, IRF53, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
***nell
MOSFET, P, D2-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -31 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 63 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.8
***icroelectronics
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
***ure Electronics
N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET™ Mosfet - D2PAK
***ical
Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK
***ark
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB
***ure Electronics
N-Channel 60 V 0.035 Ohm Surface Mount Mosfet - D2PAK-3
***et Europe
Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R
***enic
60V 32A 35m´Î@10V16A 79W 2.5V@250Ã×A N Channel D2PAK¨×TO-263AB¨Ø MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 60V, 32A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
***p One Stop
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
***eco
IRLZ34NSTRLPBF,MOSFET, 55V, 30 A, 35 MOHM, 16.7 NC QG, LOGIC
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:30A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:68W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 55V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:68W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:21A; Cont Current Id @ 25°C:30A; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:110A; Rth:2.2; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
***et Europe
Transistor MOSFET N-CH 55V 29A 3-Pin D2PAK T/R
***ure Electronics
Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***fin
Transistor NPN Field Effect IRFZ34/SO/IRFZ34NS INTERNATIONAL RECTIFIER Ampere=26 V=55 TO263
***(Formerly Allied Electronics)
Power MOSFET,N-Ch,VDSS 55V,RDS(ON) 0.04Ohm,ID 29A,D2Pak,PD 68W,VGS+/-20V,Qg 34nC
***eco
IRFZ34NSTRLPBF,MOSFET, 55V, 29 A, 40 MOHM, 22.7 NC QG, D2-PA
*** Stop Electro
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 55V, 29A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***-Wing Technology
Tube Surface Mount P-Channel Single Mosfet Transistor 27.5A Ta 27.5A 120W 190ns
***ser
MOSFETs- Power and Small Signal -60V -27.5A Pchannel No-Cancel/No-Return
***r Electronics
Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal NFET 60V 30A
***i-Key
MOSFET N-CH 60V 27A D2PAK
***r Electronics
Power Field-Effect Transistor, 27A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
RES SMD 160 OHM 1% 1/4W 1206
型號 製造商 描述 庫存 價格
IRF5305STRLPBF
DISTI # V72:2272_13889606		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		16
  • 10:$0.8613
  • 1:$1.1352
IRF5305STRLPBF
DISTI # IRF5305STRLPBFCT-ND		Infineon Technologies AGMOSFET P-CH 55V 31A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1772In Stock
  • 100:$1.2208
  • 10:$1.5450
  • 1:$1.7400
IRF5305STRLPBF
DISTI # IRF5305STRLPBFDKR-ND		Infineon Technologies AGMOSFET P-CH 55V 31A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1772In Stock
  • 100:$1.2208
  • 10:$1.5450
  • 1:$1.7400
IRF5305STRLPBF
DISTI # IRF5305STRLPBFTR-ND		Infineon Technologies AGMOSFET P-CH 55V 31A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 800:$0.8031
IRF5305STRLPBF
DISTI # 30690092		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		4800
  • 200:$0.8147
  • 100:$0.9244
  • 50:$1.0914
  • 10:$1.3260
IRF5305STRLPBF
DISTI # 30719847		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 800:$0.5328
IRF5305STRLPBF
DISTI # 30606096		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		666
  • 11:$2.3750
IRF5305STRLPBF
DISTI # 27565934		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		16
  • 13:$1.1352
IRF5305STRLPBF
DISTI # IRF5305STRLPBF		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF5305STRLPBF)
RoHS: Compliant
Min Qty: 1600
Container: Tape and Reel		Asia - 8000
  • 800:$0.5085
  • 1600:$0.4876
  • 2400:$0.4810
  • 4000:$0.4623
  • 8000:$0.4563
  • 20000:$0.4449
  • 40000:$0.4341
IRF5305STRLPBF
DISTI # IRF5305STRLPBF		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF5305STRLPBF)
RoHS: Compliant
Min Qty: 1600
Container: Reel		Americas - 0
  • 1600:$0.5059
  • 3200:$0.4879
  • 4800:$0.4699
  • 8000:$0.4549
  • 16000:$0.4469
IRF5305STRLPBF
DISTI # SP001564840		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001564840)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€0.5399
  • 1600:€0.4409
  • 3200:€0.4049
  • 4800:€0.3729
  • 8000:€0.3469
IRF5305STRLPBF
DISTI # 40M7919		Infineon Technologies AGP CHANNEL MOSFET, -55V, 31A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-31A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes819
  • 1:$1.6000
  • 10:$1.3600
  • 25:$1.2500
  • 50:$1.1400
  • 100:$1.0400
  • 250:$0.9800
  • 500:$0.9200
IRF5305STRLPBF.
DISTI # 26AC0593		Infineon Technologies AGP CHANNEL MOSFET, -55V, 31A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-31A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes0
    IRF5305STRLPBF
    DISTI # 70017469    		Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -55V,RDS(ON) 0.06Ohm,ID -31A,D2Pak,PD 110W,VGS +/-20V
    RoHS: Compliant    		40
    • 1:$2.2340
    • 10:$1.9710
    • 100:$1.7180
    • 500:$1.4890
    • 1000:$1.3140
    IRF5305STRLPBFInfineon Technologies AGSingle P-Channel 55V 0.06 Ohm 63 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant    		11Cut Tape/Mini-Reel
    • 1:$0.7850
    • 50:$0.6900
    • 100:$0.6750
    • 250:$0.6550
    • 500:$0.6300
    IRF5305STRLPBFInfineon Technologies AGSingle P-Channel 55V 0.06 Ohm 63 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant    		7200Reel
    • 800:$0.5650
    • 1600:$0.5450
    IRF5305STRLPBF
    DISTI # 942-IRF5305STRLPBF    		Infineon Technologies AGMOSFET MOSFT PCh -55V -31A 60mOhm 42nC
    RoHS: Compliant    		2830
    • 1:$1.4500
    • 10:$1.2400
    • 100:$0.9460
    • 500:$0.8360
    • 800:$0.6600
    • 2400:$0.5850
    • 9600:$0.5630
    IRF5305STRLPBFInternational Rectifier 654
      IRF5305STRLPBF
      DISTI # 8312834P      		Infineon Technologies AGHEXFET P-CH MOSFET 31A 55V D2PAK, RL1890
      • 100:£0.6840
      • 200:£0.6500
      • 400:£0.6150
      • 800:£0.4770
      IRF5305STRLPBF
      DISTI # 8312834      		Infineon Technologies AGHEXFET P-CH MOSFET 31A 55V D2PAK, PK200
      • 10:£0.9640
      • 100:£0.6840
      • 200:£0.6500
      • 400:£0.6150
      • 800:£0.4770
      IRF5305STRLPBF
      DISTI # IRF5305STRLPBF      		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-55V,-31A,110W,D2PAK1
      • 1:$0.8235
      • 3:$0.7089
      • 10:$0.5695
      • 100:$0.4944
      IRF5305STRLPBF
      DISTI # IRF5305SPBF-GURT      		Infineon Technologies AGP-Ch 55V 31A 110W 0,06R DPak
      RoHS: Compliant      		800
      • 10:€0.6710
      • 50:€0.4910
      • 200:€0.4310
      • 500:€0.4150
      IRF5305STRLPBFInfineon Technologies AGINSTOCK1163
        IRF5305STRLPBF
        DISTI # C1S322000480791        		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant        		666
        • 100:$1.0700
        • 50:$1.2600
        • 10:$1.5500
        • 1:$1.9000
        IRF5305STRLPBF
        DISTI # C1S322000480782        		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant        		16
        • 10:$0.8613
        IRF5305STRLPBF
        DISTI # C1S322000480773        		Infineon Technologies AGTrans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant        		4800
        • 1600:$0.5770
        • 200:$0.6440
        • 100:$0.7310
        • 50:$0.8640
        • 10:$1.0500
        • 1:$2.0600
        IRF5305STRLPBFInfineon Technologies AG-55V,60m,-31A,P-Channel Power MOSFET1250
        • 1:$1.0200
        • 100:$0.8500
        • 500:$0.7500
        • 1000:$0.7300
        IRF5305STRLPBF
        DISTI # 2577177        		Infineon Technologies AGMOSFET, P-CH, -55V, -31A, TO-263-3
        RoHS: Compliant        		645
        • 1:$2.3000
        • 10:$1.9700
        • 100:$1.5100
        • 500:$1.3300
        • 800:$1.0500
        • 2400:$0.9270
        • 9600:$0.8910
        IRF5305STRLPBF
        DISTI # 2577177        		Infineon Technologies AGMOSFET, P-CH, -55V, -31A, TO-263-3
        RoHS: Compliant        		515
        • 5:£0.9830
        • 25:£0.9540
        • 100:£0.6630
        • 250:£0.6270
        • 500:£0.4870
        IRF5305STRLPBF
        DISTI # XSFP00000074383        		Infineon Technologies AG 
        RoHS: Compliant        		18844
        • 800:$0.8600
        • 18844:$0.8062
        圖片 型號 描述
        MCP73831T-2ATI/OT

        Mfr.#: MCP73831T-2ATI/OT

        OMO.#: OMO-MCP73831T-2ATI-OT

        		 Battery Management Charge mgnt contr
        MMBT2222A-7-F

        Mfr.#: MMBT2222A-7-F

        OMO.#: OMO-MMBT2222A-7-F

        		 Bipolar Transistors - BJT 40V 300mW
        IRF5305PBF

        Mfr.#: IRF5305PBF

        OMO.#: OMO-IRF5305PBF

        		 MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
        RC0603FR-071KL

        Mfr.#: RC0603FR-071KL

        OMO.#: OMO-RC0603FR-071KL

        		 Thick Film Resistors - SMD 1K OHM 1%
        MCP73831T-2ATI/OT

        Mfr.#: MCP73831T-2ATI/OT

        OMO.#: OMO-MCP73831T-2ATI-OT-MICROCHIP-TECHNOLOGY

        		 Battery Management Charge mgnt cont
        885012206071

        Mfr.#: 885012206071

        OMO.#: OMO-885012206071-WURTH-ELECTRONICS

        		 CAP CER 0.1UF 25V X7R 0603
        RC0603FR-071K5L

        Mfr.#: RC0603FR-071K5L

        OMO.#: OMO-RC0603FR-071K5L-YAGEO

        		 Thick Film Resistors - SMD 1.5K OHM 1%
        RC0603FR-07100KL

        Mfr.#: RC0603FR-07100KL

        OMO.#: OMO-RC0603FR-07100KL-YAGEO

        		 Thick Film Resistors - SMD 100K OHM 1%
        RC0603FR-0712KL

        Mfr.#: RC0603FR-0712KL

        OMO.#: OMO-RC0603FR-0712KL-YAGEO

        		 Thick Film Resistors - SMD 12K OHM 1%
        RC0603FR-07220RL

        Mfr.#: RC0603FR-07220RL

        OMO.#: OMO-RC0603FR-07220RL-YAGEO

        		 Thick Film Resistors - SMD 220 OHM 1%
        可用性
        庫存:
        Available
        訂購:
        1987
        輸入數量:
        IRF5305STRLPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$1.45
        US$1.45
        10
        US$1.24
        US$12.40
        100
        US$0.95
        US$94.60
        500
        US$0.84
        US$418.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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