CSD16409Q3

Mfr. #:: CSD16409Q3
描述:: MOSFET N-Ch NexFET Power MOSFETs
生命週期:: 製造商新產品
數據表:: CSD16409Q3 數據表
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ECAD Model:
更多信息:: CSD16409Q3 更多信息 CSD16409Q3 Product Details

產品屬性
屬性值

製造商：: 德州儀器

產品分類：: MOSFET

RoHS：: E

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: VSON-Clip-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 25 V

Id - 連續漏極電流：: 100 A

Rds On - 漏源電阻：: 9.5 mOhms

Vgs th - 柵源閾值電壓：: 2 V

Vgs - 柵源電壓：: 16 V

Qg - 門電荷：: 4 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2.6 W

配置：: 單身的

頻道模式：: 增強

商品名：: 場效應管

打包：: 捲軸

高度：: 1 mm

長度：: 3.3 mm

系列：: CSD16409Q3

晶體管類型：: 1 N-Channel

寬度：: 3.3 mm

品牌：: 德州儀器

正向跨導 - 最小值：: 38 S

秋季時間：: 3.4 ns

產品類別：: MOSFET

上升時間：: 10.6 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 6.3 ns

典型的開啟延遲時間：: 6.5 ns

單位重量：: 0.001474 oz

Tags: CSD16409Q, CSD16409, CSD1640, CSD164, CSD16, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD16409Q3 評級和評論

A***i

Irf9540-workers. The transition resistance at 5 (a) is about 0,2 (ohm). Tested with current only 5 amps-holds, commutes, does not heat.

2019-04-30

S***Z

Teşekkürler,A fine quality, bright screen. The size is full and very narrow, the special cut sat on the ground. Muadil although bilmesem farkedilemeyecek up good.

2019-02-08

V***v

I did not receive this parcel

2019-04-19

CSD16409Q3 描述

***as Instruments: 25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm 8-VSON-CLIP -55 to 150

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications.

***ment14 APAC: FET, N CH, SINGLE, 25V, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:60A; Package / Case:SON; Power Dissipation Pd:2.6W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

***AS INSTRUMEN: The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

CSD16409Q3 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型號	描述	庫存	價格
CSD16409Q3 DISTI # V72:2272_07248744	Trans MOSFET N-CH 25V 15A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	980	500:$0.5097 250:$0.5215 100:$0.5796 25:$0.6966 10:$0.8512 1:$1.0018
CSD16409Q3 DISTI # V39:1801_07248744	Trans MOSFET N-CH 25V 15A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	0
CSD16409Q3 DISTI # 296-24253-1-ND	MOSFET N-CH 25V 60A 8-SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6603In Stock	1000:$0.4311 500:$0.5460 100:$0.7041 10:$0.8910 1:$1.0100
CSD16409Q3 DISTI # 296-24253-6-ND	MOSFET N-CH 25V 60A 8-SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6603In Stock	1000:$0.4311 500:$0.5460 100:$0.7041 10:$0.8910 1:$1.0100
CSD16409Q3 DISTI # 296-24253-2-ND	MOSFET N-CH 25V 60A 8-SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.3906
CSD16409Q3 DISTI # 27060809	Trans MOSFET N-CH 25V 15A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	980	500:$0.5479 250:$0.5606 100:$0.6231 25:$0.7488 18:$0.9150
CSD16409Q3 DISTI # 31711387	Trans MOSFET N-CH 25V 15A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	300	300:$0.4710
CSD16409Q3 DISTI # CSD16409Q3	Trans MOSFET N-CH 25V 15A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD16409Q3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3499 15000:$0.3599 10000:$0.3719 5000:$0.3849 2500:$0.4039
CSD16409Q3	25V, N ch NexFET MOSFET™, single SON3x3, 12.4mOhm	7325	1000:$0.3200 750:$0.3500 500:$0.4400 250:$0.5400 100:$0.5900 25:$0.6900 10:$0.7500 1:$0.8300
CSD16409Q3 DISTI # 595-CSD16409Q3	MOSFET N-Ch NexFET Power MOSFETs RoHS: Compliant	2554	1:$0.9200 10:$0.7800 100:$0.6000 500:$0.5310 1000:$0.4190 2500:$0.3720 10000:$0.3580 22500:$0.3460
CSD16409Q3	Power Field-Effect Transistor, 15A I(D), 25V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	30	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
CSD16409Q3		20	6:$0.9375
CSD16409Q3		2077
CSD16409Q3		2800	1601:$0.4375 321:$0.5000 1:$1.2500
CSD16409Q3		16	5:$1.0000 1:$1.2500

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