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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SIR866DP-T1-GE3 DISTI # SIR866DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 60A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | 196In Stock |
|
| SIR866DP-T1-GE3 DISTI # SIR866DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 60A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | 196In Stock |
|
| SIR866DP-T1-GE3 DISTI # SIR866DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 60A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIR866DP-T1-GE3 DISTI # 85W8933 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 60A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SIR866DP-T1-GE3. DISTI # 30AC0121 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 60A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SIR866DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 | |
| SIR866DP-T1-GE3 DISTI # SIR866DP-GE3 | Vishay Intertechnologies | N-Ch 20V 60A 5,4W 0,0019R PowerPakSO8 RoHS: Compliant | 0 |
|
| SIR866DP-T1-GE3 DISTI # 2335404 | Vishay Intertechnologies | MOSFET, N CH, 20V, 60A, POWERPAK SO RoHS: Compliant | 0 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: SIR866DP OMO.#: OMO-SIR866DP-1190 |
全新原裝 |
|
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Mfr.#: SIR866DP-T1-E3 OMO.#: OMO-SIR866DP-T1-E3-1190 |
全新原裝 |
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Mfr.#: SIR866DP-T1-GE3 OMO.#: OMO-SIR866DP-T1-GE3-VISHAY |
MOSFET N-CH 20V 60A PPAK SO-8 |
|
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Mfr.#: SIR866DPT1GE3 OMO.#: OMO-SIR866DPT1GE3-1190 |
Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |