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SI7106DN-T1-GE3

SI7106DN-T1-GE3
Mfr. #:
SI7106DN-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
生命週期:
製造商新產品
數據表:
SI7106DN-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SI7106DN-T1-GE3 DatasheetSI7106DN-T1-GE3 Datasheet (P4-P6)
ECAD Model:
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-1212-8
商品名：
溝槽場效應晶體管
打包：
捲軸
高度：
1.04 mm
長度：
3.3 mm
系列：
SI7
寬度：
3.3 mm
品牌：
威世 / Siliconix
產品類別：
MOSFET
出廠包裝數量：
3000
子類別：
MOSFET
第 # 部分別名：
SI7106DN-GE3
Tags
SI7106DN-T1, SI7106DN-T, SI7106D, SI7106, SI710, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SI7106DN Series N-Channel 20 V 0.0062 Ohm Power MosFet SMT - POWERPAK-1212-8
*** Source Electronics
Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 20V 12.5A 1212-8
***ment14 APAC
MOSFET, N, PPAK1212; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.6V
***ure Electronics
N-Channel 20 V 3.8 W 4.9 mohm SMT Fast Switching Mosfet - PowerPAK 1212-8
***ical
Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R
***enic
20V 14A 4.9m´Î@10V22A 1.5W 2V@250Ã×A N Channel PowerPAK-1212-8 MOSFETs ROHS
***ment14 APAC
N CHANNEL MOSFET, 20V, 22A POWERPAK
***S
French Electronic Distributor since 1988
***nell
MOSFET, N CH, 20V, 14A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
***ure Electronics
Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
***ical
Trans MOSFET N-CH 20V 13.5A 8-Pin PowerPAK 1212 T/R
***enic
20V 13.5A 1.5W 5.3m´Î@10V21.1A 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
***(Formerly Allied Electronics)
MOSFET; N-Channel 20-V (D-S) Fast Switching
***icontronic
Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***eco
N-CH POWERPAK 1212-8 BWL 20V 5.3MOHM @ 10V
***ser
N-Channel MOSFETs 20V 21.1A 0.0053Ohm
***ment14 APAC
N CH MOSFET, 21.1V, 20A, POWERPAK
***S
French Electronic Distributor since 1988
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:21.1V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
***ical
Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R
***ser
N-Channel MOSFETs 20V 22A 0.0049Ohm
***S
French Electronic Distributor since 1988
*** Electronics
XSTRNMOS SMT20V14A4.1MOHMSMT-NOPBP
***ment14 APAC
N CHANNEL MOSFET, 20V, 22A POWERPAK; Tra; N CHANNEL MOSFET, 20V, 22A POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V
***eco
Transistor MOSFET N Channel 20 Volt 16 Amp 8-Pin SOIC
***ure Electronics
Single N-Channel 20 V 0.0065 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R / MOSFET N-CH 20V 16A 8-SOIC
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 20V, 16A; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V; Product Range:-Rohs Compliant: Yes
***Yang
Transistor MOSFET Array Dual N-CH 20V 58A 6-Pin DirectFET SA T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 4.9 mOhm 54 nC HEXFET® Power Mosfet - DirectFET®
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET; Low Profile (less than 0.7 mm); Dual Sided Cooling | Target Applications: Battery Protection
型號 製造商 描述 庫存 價格
SI7106DN-T1-GE3
DISTI # V72:2272_09215606		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1477
  • 1000:$0.9344
  • 500:$0.9910
  • 250:$1.0476
  • 100:$1.1043
  • 25:$1.1609
  • 10:$1.1837
  • 1:$1.4576
SI7106DN-T1-GE3
DISTI # V36:1790_09215606		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000:$0.9545
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 12.5A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3417In Stock
  • 1000:$0.6038
  • 500:$0.7648
  • 100:$0.9258
  • 10:$1.1870
  • 1:$1.3300
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 12.5A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3417In Stock
  • 1000:$0.6038
  • 500:$0.7648
  • 100:$0.9258
  • 10:$1.1870
  • 1:$1.3300
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 12.5A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.5002
  • 6000:$0.5198
  • 3000:$0.5471
SI7106DN-T1-GE3
DISTI # 25789862		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1477
  • 8:$1.4576
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7106DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 3000
  • 150000:$1.0804
  • 75000:$1.1137
  • 30000:$1.1490
  • 15000:$1.2481
  • 9000:$1.4773
  • 6000:$1.8561
  • 3000:$2.4130
SI7106DN-T1-GE3
DISTI # SI7106DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7106DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.8969
  • 18000:$0.9219
  • 12000:$0.9479
  • 6000:$0.9879
  • 3000:$1.0179
SI7106DN-T1-GE3
DISTI # 33P5373		Vishay IntertechnologiesN CH MOSFET,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,No. of Pins:8,On Resistance Rds(on):6.2mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-PowerPAK 1212,Power Dissipation Pd:3.8W RoHS Compliant: Yes0
  • 10000:$0.8750
  • 6000:$0.9100
  • 4000:$0.9450
  • 2000:$1.0500
  • 1000:$1.1100
  • 1:$1.1800
SI7106DN-T1-GE3
DISTI # 12R3254		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:3.8W RoHS Compliant: Yes0
  • 1000:$0.8960
  • 500:$1.0800
  • 250:$1.1600
  • 100:$1.2400
  • 50:$1.4200
  • 25:$1.6000
  • 1:$1.9200
SI7106DN-T1-GE3
DISTI # 781-SI7106DN-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		5878
  • 1:$1.9000
  • 10:$1.5800
  • 100:$1.2300
  • 500:$1.0700
  • 1000:$0.8870
SI7106DN-T1-GE3Vishay Intertechnologies 7127
    圖片 型號 描述
    SI7106DN-T1-GE3

    Mfr.#: SI7106DN-T1-GE3

    OMO.#: OMO-SI7106DN-T1-GE3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7106DN-T1-E3

    Mfr.#: SI7106DN-T1-E3

    OMO.#: OMO-SI7106DN-T1-E3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7106DN-T1-E3-CUT TAPE

    Mfr.#: SI7106DN-T1-E3-CUT TAPE

    OMO.#: OMO-SI7106DN-T1-E3-CUT-TAPE-1190

    		 全新原裝
    SI7106DN

    Mfr.#: SI7106DN

    OMO.#: OMO-SI7106DN-1190

    		 全新原裝
    SI7106DN-T1-GE3

    Mfr.#: SI7106DN-T1-GE3

    OMO.#: OMO-SI7106DN-T1-GE3-VISHAY

    		 MOSFET N-CH 20V 12.5A 1212-8
    SI7106DN-TI-E3

    Mfr.#: SI7106DN-TI-E3

    OMO.#: OMO-SI7106DN-TI-E3-1190

    		 全新原裝
    SI7106DNT1E3

    Mfr.#: SI7106DNT1E3

    OMO.#: OMO-SI7106DNT1E3-1190

    		 Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    SI7106DN-T1-E3

    Mfr.#: SI7106DN-T1-E3

    OMO.#: OMO-SI7106DN-T1-E3-VISHAY

    		 MOSFET N-CH 20V 12.5A 1212-8
    可用性
    庫存:
    Available
    訂購:
    1988
    輸入數量:
    SI7106DN-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.90
    US$1.90
    10
    US$1.58
    US$15.80
    100
    US$1.23
    US$123.00
    500
    US$1.07
    US$535.00
    1000
    US$0.89
    US$887.00
    從...開始
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