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NDBA180N10BT4H

NDBA180N10BT4H
Mfr. #:
NDBA180N10BT4H
製造商:
ON Semiconductor
描述:
MOSFET NCH 180A 100V TO-263
生命週期:
製造商新產品
數據表:
NDBA180N10BT4H 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
180 A
Rds On - 漏源電阻：
2.3 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
95 nC
最高工作溫度：
+ 175 C
Pd - 功耗：
200 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
晶體管類型：
1 N-Channel
品牌：
安森美半導體
正向跨導 - 最小值：
150 S
秋季時間：
130 ns
產品類別：
MOSFET
上升時間：
320 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
185 ns
典型的開啟延遲時間：
95 ns
單位重量：
0.077603 oz
Tags
NDBA1, NDBA, NDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
***emi
Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel
***r Electronics
Power Field-Effect Transistor, 100A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***(Formerly Allied Electronics)
IRFS7730PBF N-channel MOSFET Transistor; 246 A; 75 V; 3-Pin D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 75V 246A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***icroelectronics
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
***ical
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
***nell
MOSFET, N CH, 100V, 180A, H2PAK-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V
***(Formerly Allied Electronics)
IRFS7734PBF N-channel MOSFET Transistor; 183 A; 75 V; 3-Pin D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***roFlash
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 75V 183A 3-Pin D2PAK T/R - Tape and Reel
***ark
TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK
***nell
MOSFET, N-CH, 75V, 183A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 183A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W
*** Stop Electro
Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***icroelectronics
N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
***et
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
***ponent Stockers USA
180 A 100 V 0.004 ohm N-CHANNEL Si POWER MOSFET
***ark
MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 180A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ow.cn
STH180N10F3-2 STMicroelectronics Transistors MOSFETs N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R - Arrow.com
***icroelectronics SCT
Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel
***ineon SCT
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 100V 130A HEXFET D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET,N CH,100V,75A,D2PAK; Continuous Drain Current Id:130A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Automotive 48V Energy Mgmt; Automotive 48V DC-DC; Automotive 48V Motor Drive; Brushed Motor Drive; Brushless Motor Drive; Exhaust; HV DC-DC Converter
***icroelectronics
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package
***ure Electronics
N-Channel 100 V 2.5 mOhm 300 W STripFET™ F7 Power Mosfet-H2PAK-2
***p One Stop
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel
***el Electronic
Buffers & Line Drivers OCTAL BUFFER 3-STATE
型號 製造商 描述 庫存 價格
NDBA180N10BT4H
DISTI # NDBA180N10BT4H-ND		ON SemiconductorMOSFET N-CH 100V 180A DPAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    NDBA180N10BT4HON Semiconductor 
    RoHS: Not Compliant    		22990
    • 1000:$1.9200
    • 500:$2.0200
    • 100:$2.1100
    • 25:$2.2000
    • 1:$2.3600
    NDBA180N10BT4H
    DISTI # 863-NDBA180N10BT4H    		ON SemiconductorMOSFET NCH 180A 100V TO-263
    RoHS: Compliant    		0
      NDBA180N10BT4HON Semiconductor 529
        NDBA180N10BT4HON Semiconductor100V,2.8m,180A,N-Channel Power MOSFET500
        • 1:$3.1300
        • 100:$2.3500
        • 500:$2.0100
        • 1000:$1.8800
        圖片 型號 描述
        NDBA180N10BT4H

        Mfr.#: NDBA180N10BT4H

        OMO.#: OMO-NDBA180N10BT4H

        		 MOSFET NCH 180A 100V TO-263
        NDBA180N10B

        Mfr.#: NDBA180N10B

        OMO.#: OMO-NDBA180N10B-1190

        		 全新原裝
        NDBA180N10BT4H

        Mfr.#: NDBA180N10BT4H

        OMO.#: OMO-NDBA180N10BT4H-ON-SEMICONDUCTOR

        		 MOSFET N-CH 100V 180A DPAK
        可用性
        庫存:
        Available
        訂購:
        1500
        輸入數量:
        NDBA180N10BT4H的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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