IRF6710S2TRPBF

Mfr. #:: IRF6710S2TRPBF
製造商:: Infineon / IR
描述:: MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
生命週期:: 製造商新產品
數據表:: IRF6710S2TRPBF 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: DirectFET-S1

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 25 V

Id - 連續漏極電流：: 37 A

Rds On - 漏源電阻：: 5.9 mOhms

Vgs th - 柵源閾值電壓：: 1.8 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 8.8 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 15 W

配置：: 單身的

打包：: 捲軸

高度：: 0.74 mm

長度：: 4.85 mm

晶體管類型：: 1 N-Channel

寬度：: 3.95 mm

品牌：: 英飛凌/紅外

正向跨導 - 最小值：: 21 S

秋季時間：: 6 ns

產品類別：: MOSFET

上升時間：: 20 ns

出廠包裝數量：: 4800

子類別：: MOSFET

典型關斷延遲時間：: 5.2 ns

典型的開啟延遲時間：: 7.9 ns

第 # 部分別名：: SP001524736

Tags: IRF6710, IRF671, IRF67, IRF6, IRF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6710S2TRPBF 描述

***ical: Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET

***(Formerly Allied Electronics): SIR436DP-T1-GE3 N-channel MOSFET Transistor; 25 A; 25 V; 8-Pin PowerPAK SO

***et: Trans MOSFET N-CH 25V 25A 8-Pin PowerPAK SO T/R

***S: French Electronic Distributor since 1988

***ure Electronics: BSZ0506NS Series 30 V 40 A 4.4 mOhm OptiMOS5 Power-MOSFET - TSDSON-8 FL

***el Electronic: In a Pack of 10, N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ0506NSATMA1

***nell: MOSFET, N-CH, 30V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 27W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

***ical: Trans MOSFET N-CH 30V 40A 8-Pin QFN EP T/R

***peria: PSMN5R8-30LL - N-channel DFN3333-8 30 V 5.8 mΩ logic level MOSFET

***el Electronic: IC OCTAL LED DRVR 100MA 16SOIC

***ark: MOSFET, N CH, 30V, 40A, 8-QFN3333; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes

***p One Stop Global: Trans MOSFET N-CH 25V 48A 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 25 V, 0.006 Ohm, 48 A - DPAK - IPAK

*** Electronic Components: IGBT Transistors MOSFET N-Ch, 25V-0.006ohms 48A

***r Electronics: Power Field-Effect Transistor, 48A I(D), 25V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 5.7mΩ

***r Electronics: Power Field-Effect Transistor, 35A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.

***Yang: Transistor MOSFET Array Dual N-Channel 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel

***emi: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V

***ical: Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 EP T/R

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Market price

型號	製造商	描述	庫存	價格
IRF6710S2TRPBF DISTI # V72:2272_13890391	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T/R RoHS: Compliant	2322	75000:$0.7810 30000:$0.7879 15000:$0.7947 6000:$0.8018 3000:$0.8909 1000:$0.9898 500:$0.9932 250:$1.0863 100:$1.1822 50:$1.2511 25:$1.4123 10:$1.4597 1:$1.6155
IRF6710S2TRPBF DISTI # IRF6710S2TRPBF-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6710S2TRPBF DISTI # 26196267	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T/R RoHS: Compliant	2322	1000:$0.8985 500:$0.9983 250:$1.1499 100:$1.1813 50:$1.2483 25:$1.4096 10:$1.4562 8:$1.6133
IRF6710S2TRPBF DISTI # IRF6710S2TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R (Alt: IRF6710S2TRPBF) RoHS: Compliant Min Qty: 4800 Container: Tape and Reel	Asia - 0
IRF6710S2TRPBF DISTI # 70019595	Infineon Technologies AG	MOSFET,25V,12.000A,DIRECTFET RoHS: Compliant	0	4800:$0.9310 9600:$0.9120 24000:$0.8840
IRF6710S2TRPBF DISTI # 942-IRF6710S2TRPBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC RoHS: Compliant	164	1:$1.9400 10:$1.6500 100:$1.3200 500:$1.1500 1000:$0.9570 2500:$0.8880 4800:$0.8550 9600:$0.7900
IRF6710S2TRPBF DISTI # C1S322000592281	Infineon Technologies AG	MOSFETs RoHS: Compliant	2322	100:$1.1842 50:$1.2509 25:$1.4241 10:$1.4701

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