OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

FDMD84100

FDMD84100
Mfr. #:
FDMD84100
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET FET 100V 20.0 MOHM PQFN
生命週期:
製造商新產品
數據表:
FDMD84100 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FDMD84100 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-33x5-8
通道數：
2 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
21 A
Rds On - 漏源電阻：
32 mOhms
Vgs th - 柵源閾值電壓：
3.1 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
11 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
23 W
配置：
雙重的
商品名：
PowerTrench 電源夾
打包：
捲軸
高度：
0.8 mm
長度：
5 mm
系列：
FDMD84100
晶體管類型：
2 N-Channel
寬度：
3.3 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
2.8 ns
產品類別：
MOSFET
上升時間：
2.6 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
14 ns
典型的開啟延遲時間：
8.4 ns
單位重量：
0.005411 oz
Tags
FDMD84, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Transistor MOSFET Array Dual N-CH 100V 21A 8-Pin PQFN T/R
***r Electronics
Power Field-Effect Transistor, 7A I(D), 100V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
***rchild Semiconductor
This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.
***ure Electronics
Single N-Channel 100 V 35 mOhm 20 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:4.5A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SJ ;RoHS Compliant: Yes
***ineon
Target Applications: AC-DC; Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 100V, 25A, DIRECTFET SJ; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 42W; Transistor Case Style: DirectFET SJ; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ark
MOSFET Transistor, N Channel, 23 A, 100 V, 60 mohm, 10 V, 3 V RoHS Compliant: Yes
***icroelectronics
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 23A DPAK
***va Crawler
N-channel 100 V, 0.06 Ohm typ., 23 A StripFET II Power MOSFET in a DPAK package
***ure Electronics
N-Channel 100 V 0.065 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on)
***r Electronics
Power Field-Effect Transistor, 15A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 23A; On State resistance @ Vgs = 10V: 65mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package
***ure Electronics
N-Channel 100 V 0.035 Ohm Surface Mount Power Mosfet - DPAK-3
*** Source Electronics
Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 25A DPAK
***ment14 APAC
MOSFET, N-CH, 100V, 25A, 40W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 100V, 25A, 40W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 40W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VII DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level
***ical
Trans MOSFET N-CH 100V 25A Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Nfet Dpak 100V 23A 56Mohm / Reel
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
RES SMD 19.6K OHM 1% 1/16W 0402
***icroelectronics
N-CHANNEL 100V - 0.038 OHM - 30A DPAK LOW GATE CHARGE STRIPFET II MOSFET
***va Crawler
N-channel 100 V, 0.038 Ohm typ., 25 A STripFET II Power MOSFET in a DPAK package
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***i-Key
MOSFET N-CH 100V 22A D2PAK
***ser
MOSFETs 22a, 100V, N-Ch UltraFET
FDMD84100 Dual N-Channel PowerTrench MOSFET
ON Semiconductor FDMD84100 Dual N-Channel PowerTrench MOSFET integrates two N-Channel devices connected internally in common-source configuration. This enables a very low package parasitics and an optimized thermal path to the common source pad on the bottom. The FDMD84100 Dual N-Channel PowerTrench MOSFET provides a very small footprint (3.3 x 5 mm) for higher power density.Learn More
型號 製造商 描述 庫存 價格
FDMD84100
DISTI # V36:1790_06337941		ON SemiconductorPT5 100/20V SYMMETRICAL DUAL C0
    FDMD84100
    DISTI # FDMD84100TR-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 3000:$1.4000
    FDMD84100
    DISTI # FDMD84100CT-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		3000In Stock
    • 1000:$1.5141
    • 500:$1.7953
    • 100:$2.1089
    • 10:$2.5740
    • 1:$2.8700
    FDMD84100
    DISTI # FDMD84100DKR-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		3000In Stock
    • 1000:$1.5141
    • 500:$1.7953
    • 100:$2.1089
    • 10:$2.5740
    • 1:$2.8700
    FDMD84100
    DISTI # FDMD84100    		ON SemiconductorTrans MOSFET N-CH 100V 21A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD84100)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 6000:$1.1900
    • 12000:$1.1900
    • 18000:$1.1900
    • 30000:$1.1900
    • 3000:$1.2900
    FDMD84100
    DISTI # 512-FDMD84100    		ON SemiconductorMOSFET FET 100V 20.0 MOHM PQFN
    RoHS: Compliant    		2345
    • 1:$2.6400
    • 10:$2.2500
    • 100:$1.9500
    • 250:$1.8500
    • 500:$1.6600
    • 1000:$1.4000
    • 3000:$1.3300
    • 6000:$1.2800
    圖片 型號 描述
    LMP2021MF/NOPB

    Mfr.#: LMP2021MF/NOPB

    OMO.#: OMO-LMP2021MF-NOPB

    		 Operational Amplifiers - Op Amps Zero Drift, Low Noise, EMI Hardened Ampl
    LTC7001EMSE#PBF

    Mfr.#: LTC7001EMSE#PBF

    OMO.#: OMO-LTC7001EMSE-PBF

    		 Gate Drivers Fast 150V Hi Side NMOS Static Switch Drv
    ADM3101EACPZ-250R7

    Mfr.#: ADM3101EACPZ-250R7

    OMO.#: OMO-ADM3101EACPZ-250R7

    		 RS-232 Interface IC 15kV ESD Protected 3.3V SGL-CH
    TPS563210ADDFT

    Mfr.#: TPS563210ADDFT

    OMO.#: OMO-TPS563210ADDFT

    		 Switching Voltage Regulators AUGUSTA 3A TEST SPIN
    MCU0805PD1001DP500

    Mfr.#: MCU0805PD1001DP500

    OMO.#: OMO-MCU0805PD1001DP500

    		 Thin Film Resistors - SMD .400W 1Kohms .5% 0805 25ppm Hi Power
    TPS563210ADDFT

    Mfr.#: TPS563210ADDFT

    OMO.#: OMO-TPS563210ADDFT-TEXAS-INSTRUMENTS

    		 Conv DC-DC 4.5V to 17V Synchronous Step Down Single-Out 0.76V to 7V 3A 8-Pin SOT-23 T/R
    EMK107BBJ106MA-T

    Mfr.#: EMK107BBJ106MA-T

    OMO.#: OMO-EMK107BBJ106MA-T-1105

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT STD 0603 X5R 16V 10uF 20%
    LMP2021MF/NOPB

    Mfr.#: LMP2021MF/NOPB

    OMO.#: OMO-LMP2021MF-NOPB-TEXAS-INSTRUMENTS

    		 Operational Amplifiers - Op Amps Zero Drift, Low Noise, EMI Hardened Ampl
    10314-52A0-008

    Mfr.#: 10314-52A0-008

    OMO.#: OMO-10314-52A0-008-3M

    		 D-Sub Backshells 14P JUNCTION SHELL
    ADM3101EACPZ-250R7

    Mfr.#: ADM3101EACPZ-250R7

    OMO.#: OMO-ADM3101EACPZ-250R7-ANALOG-DEVICES-INC-ADI

    		 RS-232 Interface IC 15kV ESD Protected 3.3V SGL-CH
    可用性
    庫存:
    233
    訂購:
    2216
    輸入數量:
    FDMD84100的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$2.64
    US$2.64
    10
    US$2.25
    US$22.50
    100
    US$1.95
    US$195.00
    250
    US$1.85
    US$462.50
    500
    US$1.66
    US$830.00
    1000
    US$1.40
    US$1 400.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
    最新產品
    More Newest Products
    Top