BSF030NE2LQXUMA1

BSF030NE2LQXUMA1
Mfr. #:
BSF030NE2LQXUMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS
生命週期:
製造商新產品
數據表:
BSF030NE2LQXUMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
WDSON-2-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
25 V
Id - 連續漏極電流:
75 A
Rds On - 漏源電阻:
2.5 mOhms
Vgs th - 柵源閾值電壓:
1.2 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
23 nC
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
Pd - 功耗:
28 W
配置:
單身的
頻道模式:
增強
商品名:
優化MOS
打包:
捲軸
高度:
0.7 mm
長度:
6.35 mm
晶體管類型:
1 N-Channel
寬度:
5.05 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
55 S
秋季時間:
2.6 ns
濕氣敏感:
是的
產品類別:
MOSFET
上升時間:
3.4 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
18 ns
典型的開啟延遲時間:
2.8 ns
第 # 部分別名:
BSF030NE2LQ BSF3NE2LQXT SP000756348
Tags
BSF03, BSF0, BSF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 3 mOhm 11.3 nC OptiMOS™ Power Mosfet - MG-WDSON-2
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, MG-WDSON-2, RoHS
***nell
MOSFET, N-CH, 25V, 75A, WDSON-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Powe
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
***ure Electronics
Single N-Channel 25 V 2.4 mOhm 23 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 25V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 48W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
***ure Electronics
N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56
***r Electronics
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ
***ark
MOSFET, N CH, 25V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; No. of Pins:8 ;RoHS Compliant: Yes
***rchild Semiconductor
• This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ical
Trans MOSFET N-CH 25V 25A 8-Pin SOIC Tube
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters, SO8, RoHS
***ment14 APAC
MOSFET, N-CH, 25V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
***ure Electronics
Single N-Channel 25 V 1.8 mOhm 39 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N-CH, 25V, 40A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:25V; On Resistance
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TSDSON-8, RoHS
***nell
MOSFET, N-CH, 25V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
***ure Electronics
Single N-Channel 30 V 2.5 W 44 nC Silicon Surface Mount Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 30V, 5.5mΩ
***nell
MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance
型號 製造商 描述 庫存 價格
BSF030NE2LQXUMA1
DISTI # V72:2272_06384738
Infineon Technologies AGTrans MOSFET N-CH 25V 24A 6-Pin WDSON T/R
RoHS: Compliant
4990
  • 3000:$0.3670
  • 1000:$0.3708
  • 500:$0.4538
  • 250:$0.5049
  • 100:$0.5106
  • 25:$0.6299
  • 10:$0.6375
  • 1:$0.7268
BSF030NE2LQXUMA1
DISTI # BSF030NE2LQXUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 25V 24A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4597In Stock
  • 1000:$0.4781
  • 500:$0.6056
  • 100:$0.7808
  • 10:$0.9880
  • 1:$1.1200
BSF030NE2LQXUMA1
DISTI # BSF030NE2LQXUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 25V 24A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4597In Stock
  • 1000:$0.4781
  • 500:$0.6056
  • 100:$0.7808
  • 10:$0.9880
  • 1:$1.1200
BSF030NE2LQXUMA1
DISTI # BSF030NE2LQXUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 25V 24A WDSON-2
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.4115
BSF030NE2LQXUMA1
DISTI # 29474506
Infineon Technologies AGTrans MOSFET N-CH 25V 24A 6-Pin WDSON T/R
RoHS: Compliant
4990
  • 3000:$0.3670
  • 1000:$0.3708
  • 500:$0.4538
  • 250:$0.5049
  • 100:$0.5106
  • 25:$0.6299
  • 21:$0.6375
BSF030NE2LQXUMA1
DISTI # BSF030NE2LQXUMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 24A 6-Pin WDSON T/R - Tape and Reel (Alt: BSF030NE2LQXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.3239
  • 10000:$0.3119
  • 20000:$0.3009
  • 30000:$0.2909
  • 50000:$0.2849
BSF030NE2LQ
DISTI # 726-BSF030NE2LQ
Infineon Technologies AGMOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS
RoHS: Compliant
5075
  • 1:$0.9300
  • 10:$0.7880
  • 100:$0.6050
  • 500:$0.5350
  • 1000:$0.4220
  • 5000:$0.3750
BSF030NE2LQXUMA1
DISTI # 726-BSF030NE2LQXUMA1
Infineon Technologies AGMOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS
RoHS: Compliant
2442
  • 1:$0.9300
  • 10:$0.7880
  • 100:$0.6050
  • 500:$0.5350
  • 1000:$0.4220
  • 5000:$0.3750
BSF030NE2LQXUMA1
DISTI # 8259073P
Infineon Technologies AGMOSFET N-CH 24A 25V OPTIMOS WDSON6, RL14940
  • 100:£0.4680
  • 400:£0.3970
  • 1000:£0.3490
BSF030NE2LQXUMA1
DISTI # 2480773
Infineon Technologies AGMOSFET, N-CH, 25V, 75A, WDSON-2
RoHS: Compliant
0
  • 5:£0.6100
  • 25:£0.5970
  • 100:£0.4570
  • 250:£0.3970
  • 500:£0.3590
BSF030NE2LQXUMA1
DISTI # C1S322000675715
Infineon Technologies AGMOSFETs
RoHS: Compliant
4990
  • 250:$0.5215
  • 100:$0.5231
  • 25:$0.6311
  • 10:$0.6425
BSF030NE2LQXUMA1
DISTI # 2480773RL
Infineon Technologies AGMOSFET, N-CH, 25V, 75A, WDSON-2
RoHS: Compliant
0
  • 1:$1.4700
  • 10:$1.2500
  • 100:$0.9580
  • 500:$0.8470
  • 1000:$0.6680
  • 5000:$0.5940
BSF030NE2LQXUMA1
DISTI # 2480773
Infineon Technologies AGMOSFET, N-CH, 25V, 75A, WDSON-2
RoHS: Compliant
0
  • 1:$1.4700
  • 10:$1.2500
  • 100:$0.9580
  • 500:$0.8470
  • 1000:$0.6680
  • 5000:$0.5940
圖片 型號 描述
RFN3BM6SFHTL

Mfr.#: RFN3BM6SFHTL

OMO.#: OMO-RFN3BM6SFHTL

Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-252(DPAK) 3A Io
SURHD8560W1T4G

Mfr.#: SURHD8560W1T4G

OMO.#: OMO-SURHD8560W1T4G

Rectifiers MEGAHERTZ 5 AMP 600V UL
FDP075N15A-F102

Mfr.#: FDP075N15A-F102

OMO.#: OMO-FDP075N15A-F102

MOSFET 150V NChan PwrTrench
RFN3BM6SFHTL

Mfr.#: RFN3BM6SFHTL

OMO.#: OMO-RFN3BM6SFHTL-ROHM-SEMI

SUPER FAST RECOVERY DIODE (CORRE
FDP075N15A-F102

Mfr.#: FDP075N15A-F102

OMO.#: OMO-FDP075N15A-F102-ON-SEMICONDUCTOR

MOSFET N-CH 150V 130A TO-220-3
SURHD8560W1T4G

Mfr.#: SURHD8560W1T4G

OMO.#: OMO-SURHD8560W1T4G-111

Rectifiers MEGAHERTZ 5 AMP 600V UL
可用性
庫存:
Available
訂購:
1988
輸入數量:
BSF030NE2LQXUMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.92
US$0.92
10
US$0.79
US$7.88
100
US$0.60
US$60.50
500
US$0.54
US$267.50
1000
US$0.42
US$422.00
從...開始
最新產品
Top