IRF6775MTR1PBF

Mfr. #:: IRF6775MTR1PBF
製造商:: Infineon / IR
描述:: MOSFET 150V N-CH 8A 47mOhm for Digital Audio
生命週期:: 製造商新產品
數據表:: IRF6775MTR1PBF 數據表
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HTML Datasheet:: IRF6775MTR1PBF Datasheet IRF6775MTR1PBF Datasheet (P4-P6)IRF6775MTR1PBF Datasheet (P7-P9)IRF6775MTR1PBF Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: DirectFET-MZ

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 150 V

Id - 連續漏極電流：: 28 A

Rds On - 漏源電阻：: 47 mOhms

Vgs th - 柵源閾值電壓：: 5 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 25 nC

最高工作溫度：: + 150 C

Pd - 功耗：: 89 W

配置：: 單身的

打包：: 捲軸

高度：: 0.7 mm

長度：: 6.35 mm

晶體管類型：: 1 N-Channel

寬度：: 5.05 mm

品牌：: 英飛凌/紅外

正向跨導 - 最小值：: 11 S

秋季時間：: 15 ns

濕氣敏感：: 是的

產品類別：: MOSFET

上升時間：: 7.8 ns

出廠包裝數量：: 1000

子類別：: MOSFET

第 # 部分別名：: SP001551188

單位重量：: 0.017637 oz

Tags: IRF67, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6775MTR1PBF 描述

***(Formerly Allied Electronics): MOSFET, N-Ch, VDSS 150V, RDS(ON) 47 mOhm, ID 28A, DirectFET

***ment14 APAC: MOSFET, N, DIRECTFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:150V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.9A; Package / Case:MZ; Power Dissipation Pd:89W; Pulse Current Idm:39A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:3V

***ernational Rectifier: A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 28 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa

***(Formerly Allied Electronics): IRFR4615PBF N-channel MOSFET Transistor; 33 A; 150 V; 3-Pin DPAK

***ure Electronics: Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - DPAK

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED

*** Source Electronics: Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 33A DPAK

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH 150V 33A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dis

***ineon SCT: Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 150V 42 mOhm 40 nC HEXFET® Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 150V 33A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 150V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0345ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; P

***emi: N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ

***ure Electronics: N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ

***ure Electronics: N-Channel 150 V 66 mOhm Surface Mount PowerTrench Mosfet - TO-252AA

***nell: MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

***r Electronics: Power Field-Effect Transistor, 3.7A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***(Formerly Allied Electronics): SUD25N15-52-E3 N-channel MOSFET Transistor; 25 A; 150 V; 3-Pin TO-252

***ure Electronics: Single N-Channel 150 V 0.052 Ohms Surface Mount Power Mosfet - TO-252

*** Source Electronics: MOSFET N-CH 150V 25A TO252 / Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK

***ment14 APAC: MOSFET, N CH, 150V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:150V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:25A; Package / Case:TO-252; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

型號	製造商	描述	庫存	價格
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6775MTR1PBF DISTI # 70018868	Infineon Technologies AG	MOSFET,N-Ch,VDSS 150V,RDS(ON) 47 mOhm,ID 28A,DirectFET RoHS: Compliant	0	1000:$1.8000 2000:$1.6300
IRF6775MTR1PBF DISTI # 942-IRF6775MTR1PBF	Infineon Technologies AG	MOSFET 150V N-CH 8A 47mOhm for Digital Audio RoHS: Compliant	0
IRF6775MTR1PBF	International Rectifier	RoHS: Compliant	Europe - 1000
IRF6775MTR1PBF DISTI # 1602267	Infineon Technologies AG	MOSFET, N, DIRECTFET MZ RoHS: Compliant	0	1:$4.6100 10:$3.7900 100:$3.0700 500:$2.7400 1000:$2.4300 2000:$2.2600 5000:$2.1900 10000:$2.0500

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	Mfr.#: IRF6775MTR1PBF OMO.#: OMO-IRF6775MTR1PBF	MOSFET 150V N-CH 8A 47mOhm for Digital Audio
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