QPD1008L

Mfr. #:: QPD1008L
製造商:: Qorvo
描述:: RF TRANSISTOR 125W 50V NI-360
生命週期:: 製造商新產品
數據表:: QPD1008L 數據表
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ECAD Model:
更多信息:: QPD1008L 更多信息

產品屬性
屬性值

Tags: QPD100, QPD10, QPD1, QPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1008L 描述

***W: RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360

***hardson RFPD: RF POWER TRANSISTOR

QPD1008L 更多信息

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
QPD1008L DISTI # QPD1008L-ND	RF Micro Devices Inc	RF TRANSISTOR 125W 50V NI-360 RoHS: Compliant Container: Bulk	Limited Supply - Call
QPD1008L DISTI # 772-QPD1008L	Qorvo	RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN RoHS: Compliant	43	1:$200.0000 25:$173.0000

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