IPD60R2K0C6BTMA1

Mfr. #:: IPD60R2K0C6BTMA1
製造商:: Infineon Technologies
描述:: MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6
生命週期:: 製造商新產品
數據表:: IPD60R2K0C6BTMA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 2.4 A

Rds On - 漏源電阻：: 1.8 Ohms

Vgs th - 柵源閾值電壓：: 2.5 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 6.7 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 22.3 W

配置：: 單身的

頻道模式：: 增強

商品名：: 酷摩

打包：: 捲軸

高度：: 2.3 mm

長度：: 6.5 mm

系列：: XPD60R2

晶體管類型：: 1 N-Channel

寬度：: 6.22 mm

品牌：: 英飛凌科技

秋季時間：: 50 ns

產品類別：: MOSFET

上升時間：: 7 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 30 ns

典型的開啟延遲時間：: 7 ns

第 # 部分別名：: IPD60R2K0C6 IPD60R2K0C6XT SP000799132

單位重量：: 0.139332 oz

Tags: IPD60R2K0, IPD60R2K, IPD60R2, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型號	製造商	描述	庫存	價格
IPD60R2K0C6BTMA1 DISTI # IPD60R2K0C6BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 2.4A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD60R2K0C6BTMA1 DISTI # IPD60R2K0C6BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 2.4A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD60R2K0C6BTMA1 DISTI # IPD60R2K0C6BTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 2.4A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD60R2K0C6BTMA1 DISTI # IPD60R2K0C6BTMA1	Infineon Technologies AG	- Bulk (Alt: IPD60R2K0C6BTMA1) RoHS: Compliant Min Qty: 1316 Container: Bulk	Americas - 0	13160:$0.2409 6580:$0.2449 3948:$0.2539 2632:$0.2629 1316:$0.2729
IPD60R2K0C6 DISTI # 726-IPD60R2K0C6	Infineon Technologies AG	MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 RoHS: Compliant	0
IPD60R2K0C6BTMA1 DISTI # 726-IPD60R2K0C6BTMA1	Infineon Technologies AG	MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 RoHS: Compliant	0
IPD60R2K0C6BTMA1	Infineon Technologies AG	Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	3211	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
IPD60R2K0C6BTMA1 DISTI # 2212874	Infineon Technologies AG	MOSFET, N-CH, 600V, 2.4A, TO252-3 RoHS: Compliant	0	50000:$0.3790 25000:$0.3860 10000:$0.4090 2500:$0.4260 1000:$0.5050 100:$0.6310 10:$0.9770 1:$1.2600

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