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PD57030-E

PD57030-E
Mfr. #:
PD57030-E
製造商:
STMicroelectronics
描述:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
生命週期:
製造商新產品
數據表:
PD57030-E 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
PD57030-E 更多信息 PD57030-E Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
射頻 MOSFET 晶體管
RoHS：
Y
晶體管極性：
N通道
技術：
矽
Id - 連續漏極電流：
4 A
Vds - 漏源擊穿電壓：
65 V
獲得：
14 dB
輸出功率：
30 W
最低工作溫度：
- 65 C
最高工作溫度：
+ 150 C
安裝方式：
貼片/貼片
包裝/案例：
PowerSO-10RF-Formed-4
打包：
管子
配置：
單身的
高度：
3.5 mm
長度：
7.5 mm
工作頻率：
1 GHz
系列：
PD57030-E
類型：
射頻功率MOSFET
寬度：
9.4 mm
品牌：
意法半導體
頻道模式：
增強
濕氣敏感：
是的
Pd - 功耗：
52.8 W
產品類別：
射頻 MOSFET 晶體管
出廠包裝數量：
400
子類別：
MOSFET
Vgs - 柵源電壓：
20 V
單位重量：
0.105822 oz
Tags
PD57030, PD5703, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 65V 4A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
N-Channel 65 V Formed Leads Enhancement Mode Lateral Mosfet - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ical
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B2X7R1H222K050BA - Keramikvielschichtkondensator, SMD, 2200 pF, 50 V, 0402 [Metrisch 1005], ± 10%, X7R, Baureihe CGA
***(Formerly Allied Electronics)
IRF7341PBF Dual N-channel MOSFET Transistor, 4.7 A, 55 V, 8-Pin SOIC | Infineon IRF7341PBF
***itex
Transistor: 2xN-MOSFET; unipolar; 55V; 4.7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 55 V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 55V 4.7A 8-Pin SOIC T/R
***id Electronics
Transistor MOSFET 2xN-Ch. 55V 4,7A SO8 IRF 7341 TRPBF
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.043Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes
***icontronic
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***eco
Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
*** Source Electronics
Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223
***ark
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-261Aa |Infineon IRFL024Z
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***nell
MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0462ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***ark
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
***ure Electronics
ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
***p One Stop Global
Trans MOSFET P-CH 60V 4.3A Automotive 4-Pin(3+Tab) SOT-223 T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 60V 4.3A SOT223 | Diodes Inc ZXMP6A17GTA
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W
***icontronic
Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2012)
***(Formerly Allied Electronics)
SI4100DY-T1-GE3 N-channel MOSFET Transistor; 6.8 A; 100 V; 8-Pin SOIC
***et
Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
***ure Electronics
Si4100DY Series 100 V 6.8 A 63 mOhm Surface Mount N-Channel MOSFET - SO-8
***nell
MOSFET, N-CH, 100V, 6.8A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.8A; Power Dissipation Pd:6W; Voltage Vgs Max:20V
型號 製造商 描述 庫存 價格
PD57030-E
DISTI # V36:1790_06556204		STMicroelectronicsTrans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		27
  • 100:$33.0900
  • 10:$37.6100
  • 1:$40.2400
PD57030-E
DISTI # 497-5307-5-ND		STMicroelectronicsFET RF 65V 945MHZ PWRSO10
RoHS: Compliant
Min Qty: 1
Container: Tube		344In Stock
  • 100:$35.3510
  • 50:$39.0080
  • 1:$43.6400
PD57030-E
DISTI # 25667260		STMicroelectronicsTrans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		27
  • 10:$37.6100
  • 1:$40.2400
PD57030-E
DISTI # 24089305		STMicroelectronicsTrans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		15
  • 2:$46.0000
PD57030-E
DISTI # PD57030-E		STMicroelectronicsTrans MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD57030-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$36.4900
  • 800:$34.7900
  • 1600:$33.1900
  • 2400:$31.6900
  • 4000:$31.0900
PD57030-ESTMicroelectronicsN-Channel 65 V Formed Leads Enhancement Mode Lateral Mosfet - POWERSO-10RF
RoHS: Compliant		190Box
  • 1:$41.6800
  • 2:$39.6000
  • 5:$37.0200
  • 10:$35.1800
  • 25:$31.2600
PD57030-E
DISTI # 511-PD57030-E		STMicroelectronicsRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
RoHS: Compliant		74
  • 1:$43.6300
  • 2:$43.1500
  • 5:$42.6600
  • 10:$40.7100
  • 25:$38.5200
  • 50:$37.5800
  • 100:$35.3400
PD57030-E
DISTI # PD57030-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		15
  • 1:$41.8600
  • 10:$40.5100
  • 50:$39.2400
  • 100:$38.0500
  • 250:$35.3700
  • 500:$33.4900
  • 1000:$31.8000
PD57030-ESTMicroelectronics 209
    PD57030-E
    DISTI # C1S730200315405    		STMicroelectronicsTrans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
    RoHS: Compliant    		15
    • 5:$52.1000
    • 1:$65.8000
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    		 RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
    CY8C24223A-24PVXIT

    Mfr.#: CY8C24223A-24PVXIT

    OMO.#: OMO-CY8C24223A-24PVXIT

    		 8-bit Microcontrollers - MCU 4K Flsh 256B RAM IND
    CY8C24223A-24PVXI

    Mfr.#: CY8C24223A-24PVXI

    OMO.#: OMO-CY8C24223A-24PVXI

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    2867002402

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    OMO.#: OMO-2867002402

    		 Ferrite Toroids / Ferrite Rings 67 Multi-Aperture 7x6.20x4.20MM
    AFT05MS003NT1

    Mfr.#: AFT05MS003NT1

    OMO.#: OMO-AFT05MS003NT1-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
    可用性
    庫存:
    65
    訂購:
    2048
    輸入數量:
    PD57030-E的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$43.63
    US$43.63
    2
    US$43.15
    US$86.30
    5
    US$42.66
    US$213.30
    10
    US$40.71
    US$407.10
    25
    US$38.52
    US$963.00
    50
    US$37.58
    US$1 879.00
    100
    US$35.34
    US$3 534.00
    250
    US$32.81
    US$8 202.50
    從...開始
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