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IRF7341GTRPBF

IRF7341GTRPBF
Mfr. #:
IRF7341GTRPBF
製造商:
Infineon / IR
描述:
MOSFET PLANAR_MOSFETS
生命週期:
製造商新產品
數據表:
IRF7341GTRPBF 數據表
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HTML Datasheet:
IRF7341GTRPBF DatasheetIRF7341GTRPBF Datasheet (P4-P6)IRF7341GTRPBF Datasheet (P7-P9)
ECAD Model:
更多信息:
IRF7341GTRPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SO-8
通道數：
2 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
55 V
Id - 連續漏極電流：
5.1 A
Rds On - 漏源電阻：
65 mOhms, 65 mOhms
Vgs th - 柵源閾值電壓：
1 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
29 nC, 29 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
2.4 W
配置：
雙重的
頻道模式：
增強
打包：
捲軸
高度：
1.75 mm
長度：
4.9 mm
晶體管類型：
2 N-Channel
寬度：
3.9 mm
品牌：
英飛凌/紅外
正向跨導 - 最小值：
10.4 S, 10.4 S
秋季時間：
12.5 ns, 12.5 ns
產品類別：
MOSFET
上升時間：
7.7 ns, 7.7 ns
出廠包裝數量：
4000
子類別：
MOSFET
典型關斷延遲時間：
31 ns, 31 ns
典型的開啟延遲時間：
9.2 ns, 9.2 ns
第 # 部分別名：
SP001563394
單位重量：
0.017870 oz
Tags
IRF7341, IRF734, IRF73, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 55V 5.1A 8-Pin SOIC T/R
***ark
MOSFET, DUAL N-CHANNEL, 55V, 5.1A, SO-8, Q101 qualified, TAPE & REEL
***ineon SCT
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型號 製造商 描述 庫存 價格
IRF7341GTRPBF
DISTI # 24580469		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 40000:$0.7564
  • 24000:$0.7583
  • 16000:$0.7602
  • 8000:$0.7621
  • 4000:$0.7641
IRF7341GTRPBF
DISTI # IRF7341GTRPBF-ND		Infineon Technologies AGMOSFET N-CH 55V 5.1A
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.9281
IRF7341GTRPBF
DISTI # C1S322000647873		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.8420
IRF7341GTRPBF
DISTI # IRF7341GTRPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7341GTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 4000
  • 4000:$0.7959
  • 8000:$0.7939
  • 16000:$0.7919
  • 24000:$0.7899
  • 40000:$0.7879
IRF7341GTRPBF
DISTI # 49AC0327		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3850
  • 1:$1.8400
  • 10:$1.5700
  • 25:$1.4600
  • 50:$1.3600
  • 100:$1.2500
  • 250:$1.1800
  • 500:$1.1000
  • 1000:$0.9070
IRF7341GTRPBF
DISTI # 942-IRF7341GTRPBF		Infineon Technologies AGMOSFET PLANAR_MOSFETS
RoHS: Compliant		3336
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 4000:$0.8130
IRF7341GTRPBF
DISTI # 2839483		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant		3850
  • 5:$3.3200
  • 25:$2.8900
  • 100:$2.3600
  • 250:$1.9900
  • 500:$1.7200
  • 1000:$1.6300
  • 5000:$1.5400
IRF7341GTRPBF
DISTI # 2839483		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant		3840
  • 1:£2.0100
  • 10:£1.5600
  • 100:£1.2000
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可用性
庫存:
Available
訂購:
1986
輸入數量:
IRF7341GTRPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.84
US$1.84
10
US$1.57
US$15.70
100
US$1.25
US$125.00
500
US$1.10
US$550.00
1000
US$0.91
US$907.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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