BSC340N08NS3GATMA1

BSC340N08NS3GATMA1
Mfr. #:
BSC340N08NS3GATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
生命週期:
製造商新產品
數據表:
BSC340N08NS3GATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PG-TDSON-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
80 V
Id - 連續漏極電流:
23 A
Rds On - 漏源電阻:
34 mOhms
Vgs th - 柵源閾值電壓:
2 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
9.1 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
32 W
配置:
單身的
頻道模式:
增強
商品名:
優化MOS
打包:
捲軸
高度:
1.27 mm
長度:
5.9 mm
系列:
OptiMOS 3
晶體管類型:
1 N-Channel
寬度:
5.15 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
8 S
秋季時間:
2 ns
產品類別:
MOSFET
上升時間:
3 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
11 ns
典型的開啟延遲時間:
8 ns
第 # 部分別名:
BSC340N08NS3 BSC34N8NS3GXT G SP000447534
單位重量:
0.007055 oz
Tags
BSC340N08NS3, BSC340N, BSC34, BSC3, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
*** Source Electronics
Trans MOSFET N-CH 80V 7A Automotive 8-Pin TDSON EP T/R / MOSFET N-CH 80V 23A TDSON-8
***ure Electronics
N-Channel 80 V 34 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***nell
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:32W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ure Electronics
Single N-Channel 80 V 29 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:6.3A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Row Pitch:6.3mm; SMD Marking:F7488; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ser
MOSFETs 6a, 80V N-Ch MOSFET
***emi
N-Channel PowerTrench® MOSFET, 80V, 6.5A, 39mΩ
***Yang
Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
N CHANNEL MOSFET, 80V, 6.5A, SOIC, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:80V; On
***nell
MOSFET, N-CH, 80V, 6.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ohm; ID 25A; TO-252; PD 50W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 60 V 0.031 Ohms Surface Mount Power Mosfet - TO-252
***nell
MOSFET, N-CH, 60V, 21.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 21.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 31.25W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***roFlash
Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
型號 製造商 描述 庫存 價格
BSC340N08NS3GATMA1
DISTI # V72:2272_06390955
Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
RoHS: Compliant
4900
  • 3000:$0.2249
  • 1000:$0.2526
  • 500:$0.3046
  • 250:$0.3079
  • 100:$0.3111
  • 25:$0.4366
  • 10:$0.4421
  • 1:$0.5109
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.2692
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC340N08NS3GATMA1
DISTI # 31314390
Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
RoHS: Compliant
4900
  • 32:$0.5109
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP - Tape and Reel (Alt: BSC340N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.2079
  • 10000:$0.2009
  • 20000:$0.1939
  • 30000:$0.1869
  • 50000:$0.1839
BSC340N08NS3GATMA1/SAMPLE
DISTI # BSC340N08NS3GATMA1/SAMPLE
Infineon Technologies AGTrans MOSFET N-CH 80V 23A 8-Pin TDSON T/R - Bulk (Alt: BSC340N08NS3GATMA1/SAMPLE)
RoHS: Compliant
Container: Bulk
Americas - 0
    BSC340N08NS3GATMA1
    DISTI # 47W3313
    Infineon Technologies AGMOSFET, N CHANNEL, 80V, 23A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0275ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes2000
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 500:$0.3270
    • 1000:$0.2910
    BSC340N08NS3 G
    DISTI # 726-BSC340N08NS3G
    Infineon Technologies AGMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
    RoHS: Compliant
    37972
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC340N08NS3GATMA1
    DISTI # 726-BSC340N08NS3GATM
    Infineon Technologies AGMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
    RoHS: Compliant
    7422
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC340N08NS3GATMA1
    DISTI # 7545320
    Infineon Technologies AGMOSFET N-CHANNEL 80V 7A OPTIMOS3 TDSON8, PK1415
    • 5:£0.4800
    • 50:£0.3720
    • 250:£0.2420
    • 1250:£0.1920
    • 2500:£0.1880
    BSC340N08NS3GATMA1
    DISTI # 2212853
    Infineon Technologies AGMOSFET, N-CH, 80V, 23A, 8TDSON
    RoHS: Compliant
    2000
    • 1:$1.0800
    • 10:$0.8900
    • 100:$0.5750
    • 1000:$0.4610
    • 5000:$0.3880
    BSC340N08NS3GATMA1
    DISTI # 2212853
    Infineon Technologies AGMOSFET, N-CH, 80V, 23A, 8TDSON
    RoHS: Compliant
    2000
    • 5:£0.4900
    • 25:£0.3790
    • 100:£0.2830
    • 250:£0.2470
    • 500:£0.2200
    圖片 型號 描述
    88E1512-A0-NNP2I000

    Mfr.#: 88E1512-A0-NNP2I000

    OMO.#: OMO-88E1512-A0-NNP2I000

    Ethernet ICs Single-port EEE GE PHY w/SGMII in 56-pin QFN package Industrial Temp
    0603ESDA-MLP7

    Mfr.#: 0603ESDA-MLP7

    OMO.#: OMO-0603ESDA-MLP7

    TVS Diodes / ESD Suppressors PolySurg 0603 35V .05 pF
    CSD18543Q3A

    Mfr.#: CSD18543Q3A

    OMO.#: OMO-CSD18543Q3A

    MOSFET 60V, N ch NexFET MOSFETG , single SON3x3, 9.9mOhm 8-VSONP -55 to 150
    REF5025AIDR

    Mfr.#: REF5025AIDR

    OMO.#: OMO-REF5025AIDR

    Voltage References Lo Noise Very Low Drift Prec VLTG REF
    STPS20M100SG-TR

    Mfr.#: STPS20M100SG-TR

    OMO.#: OMO-STPS20M100SG-TR

    Schottky Diodes & Rectifiers 20A 100V
    PCA9306DQER

    Mfr.#: PCA9306DQER

    OMO.#: OMO-PCA9306DQER

    Translation - Voltage Levels Dual BiDir I2C-Bus & SMBus Vltg Lev-Tran
    LM5145RGYR

    Mfr.#: LM5145RGYR

    OMO.#: OMO-LM5145RGYR

    Switching Controllers 100V SYNCHRONOUS BUCK WIDE VIN CONTROLLE
    LM5088MH-2/NOPB

    Mfr.#: LM5088MH-2/NOPB

    OMO.#: OMO-LM5088MH-2-NOPB

    Switching Controllers 5V Non-Synch Ecm Buck Contr
    CM5441Z161B-10

    Mfr.#: CM5441Z161B-10

    OMO.#: OMO-CM5441Z161B-10

    Common Mode Chokes / Filters 160ohms 100MHz 75A 1 Choke Thru-hole
    REF5025AIDR

    Mfr.#: REF5025AIDR

    OMO.#: OMO-REF5025AIDR-TEXAS-INSTRUMENTS

    Voltage References Lo Noise Very Low Drift Prec VLTG REF
    可用性
    庫存:
    Available
    訂購:
    1990
    輸入數量:
    BSC340N08NS3GATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.67
    US$0.67
    10
    US$0.56
    US$5.62
    100
    US$0.36
    US$36.30
    1000
    US$0.29
    US$291.00
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