IPB020N10N5LFATMA1

Mfr. #:: IPB020N10N5LFATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 100V D2PAK-3
生命週期:: 製造商新產品
數據表:: IPB020N10N5LFATMA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: IPB020N1, IPB020, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB020N10N5LFATMA1 描述

***ical: MOSFET OptiMOS 5 Linear FET, 100V Feat

***i-Key: MOSFET N-CH 100V D2PAK-3

***ronik: N-CH 100V 120A 1,8mOhm D2PAK

***et Europe: DIFFERENTIATED MOSFETS

***ark: Mosfet, N-Ch, 100V, 120A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes

***ineon: Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 100V, 120A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

型號	製造商	描述	庫存	價格
IPB020N10N5LFATMA1 DISTI # 31951654	Infineon Technologies AG	DIFFERENTIATED MOSFETS	1000	1000:$3.8004
IPB020N10N5LFATMA1 DISTI # IPB020N10N5LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	978In Stock	500:$4.6815 100:$5.5876 10:$6.7960 1:$7.5500
IPB020N10N5LFATMA1 DISTI # IPB020N10N5LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	978In Stock	500:$4.6815 100:$5.5876 10:$6.7960 1:$7.5500
IPB020N10N5LFATMA1 DISTI # IPB020N10N5LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$3.9587
IPB020N10N5LFATMA1 DISTI # V36:1790_17076744	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0
IPB020N10N5LFATMA1 DISTI # IPB020N10N5LFATMA1	Infineon Technologies AG	DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB020N10N5LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.7900 2000:$3.6900 4000:$3.4900 6000:$3.3900 10000:$3.2900
IPB020N10N5LFATMA1 DISTI # SP001503854	Infineon Technologies AG	DIFFERENTIATED MOSFETS (Alt: SP001503854) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€3.5900 2000:€3.3900 4000:€3.2900 6000:€3.0900 10000:€2.8900
IPB020N10N5LFATMA1 DISTI # 93AC7098	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes	685	500:$3.3000 250:$3.6200 100:$3.7900 50:$4.0800 25:$4.3700 10:$4.5800 1:$5.0700
IPB020N10N5LFATMA1 DISTI # 726-IPB020N10N5LFATM	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	48	1:$6.3400 10:$5.7300 25:$5.4600 100:$4.7400 250:$4.5300 500:$4.1300 1000:$3.6000 2000:$3.4600
IPB020N10N5LFATMA1 DISTI # 2986456	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 313W, TO-263 RoHS: Compliant	685	1000:$5.1400 500:$5.8800 250:$6.4800 100:$6.8300 10:$7.8000 1:$9.9200
IPB020N10N5LFATMA1 DISTI # 2986456	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 313W, TO-263 RoHS: Compliant	685	500:£3.4100 250:£3.8900 100:£4.1000 10:£4.7400 1:£6.1800

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