TGF3015-SM

Mfr. #:: TGF3015-SM
製造商:: Qorvo
描述:: RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN
生命週期:: 製造商新產品
數據表:: TGF3015-SM 數據表
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更多信息:: TGF3015-SM 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵碳化矽

獲得：: 17.1 dB

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 32 V

Vgs - 柵源擊穿電壓：: - 2.7 V

Id - 連續漏極電流：: 557 mA

輸出功率：: 11 W

Pd - 功耗：: 15.3 W

安裝方式：: 貼片/貼片

包裝/案例：: QFN-EP-16

打包：: 托盤

配置：: 單身的

工作頻率：: 0.03 GHz to 3 GHz

品牌：: 科沃

開發套件：: TGF3015-SM-EVB1

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 100

子類別：: 晶體管

第 # 部分別名：: 1120419

Tags: TGF30, TGF3, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF3015-SM 描述

***W: RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic

TGF3015-SM 更多信息

TGF3015-SM GaN HEMT: Qorvo TGF3015-SM is a 10W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3x3mm package that saves real estate of already space-constrained handheld radios.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
TGF3015-SM DISTI # 772-TGF3015-SM	Qorvo	RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN RoHS: Compliant	156	1:$58.0000 25:$51.0000 100:$45.0000
TGF3015-SM-EVB DISTI # 772-TGF3015-SM-EVB	Qorvo	RF Development Tools RoHS: Compliant	0	1:$875.0000

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