IXFH120N20P

IXFH120N20P
Mfr. #:
IXFH120N20P
製造商:
Littelfuse
描述:
MOSFET 120 Amps 200V 0.022 Rds
生命週期:
製造商新產品
數據表:
IXFH120N20P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH120N20P DatasheetIXFH120N20P Datasheet (P4-P5)
ECAD Model:
更多信息:
IXFH120N20P 更多信息
產品屬性
屬性值
製造商:
IXYS
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
200 V
Id - 連續漏極電流:
120 A
Rds On - 漏源電阻:
22 mOhms
Vgs th - 柵源閾值電壓:
5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
152 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
714 W
配置:
單身的
頻道模式:
增強
商品名:
高功率場效應晶體管
打包:
管子
高度:
21.46 mm
長度:
16.26 mm
系列:
IXFH120N20P
晶體管類型:
1 N-Channel
類型:
PolarHT HiPerFET 功率 MOSFET
寬度:
5.3 mm
品牌:
IXYS
正向跨導 - 最小值:
40 S
秋季時間:
31 ns
產品類別:
MOSFET
上升時間:
35 ns
出廠包裝數量:
30
子類別:
MOSFET
典型關斷延遲時間:
100 ns
典型的開啟延遲時間:
30 ns
單位重量:
0.229281 oz
Tags
IXFH120N2, IXFH120, IXFH12, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET TRANSISTOR, N CHANNEL, 120 A, 200 V, 22 MOHM, 10 V, 5 V ROHS COMPLIANT: YES
***Components
In a Tube of 30, N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P
***ure Electronics
Single N-Channel 200 Vds 22 mOhm 714 W Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
***i-Key
MOSFET N-CH 200V 120A TO-247
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:714W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6000pF; Current Id Max:120A; Junction to Case Thermal Resistance A:0.21°C/W; N-channel Gate Charge:152nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.022ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:714W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017); Capacità Ciss Tipica:6000pF; Carica Gate Canale N:152nC; Corrente Id Max:120A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Resistenza Termica A da Giunzione a Case:0.21°C/W; Temperatura di Esercizio Min:-55°C; Tempo di Recupero Inverso trr Max:200ns; Tensione Vds Tipica:200V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Foro Passante
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
型號 製造商 描述 庫存 價格
IXFH120N20P
DISTI # V99:2348_15877137
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
32
  • 1000:$5.3560
  • 500:$5.5679
  • 250:$6.0740
  • 100:$6.6070
  • 50:$6.7990
  • 25:$7.2860
  • 10:$8.5150
  • 1:$9.3350
IXFH120N20P
DISTI # IXFH120N20P-ND
IXYS CorporationMOSFET N-CH 200V 120A TO-247
RoHS: Compliant
Min Qty: 30
Container: Box
Temporarily Out of Stock
  • 30:$8.6367
IXFH120N20P
DISTI # 31066494
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
60
  • 500:$5.9808
  • 250:$6.5664
  • 100:$7.1904
  • 50:$7.3536
  • 25:$7.9104
  • 10:$9.5136
  • 2:$10.5696
IXFH120N20P
DISTI # 26536747
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
32
  • 25:$7.2860
  • 10:$8.5150
  • 2:$9.3350
IXFH120N20P
DISTI # 58M7590
IXYS CorporationMOSFET Transistor, N Channel, 120 A, 200 V, 22 mohm, 10 V, 5 V RoHS Compliant: Yes38
  • 1:$11.0100
  • 10:$9.9100
  • 25:$8.2400
  • 50:$7.6600
  • 100:$7.4900
  • 250:$6.8400
  • 500:$6.2300
IXFH120N20P
DISTI # 747-IXFH120N20P
IXYS CorporationMOSFET 120 Amps 200V 0.022 Rds
RoHS: Compliant
182
  • 1:$11.0100
  • 10:$9.9100
  • 25:$8.2400
  • 50:$7.6600
  • 100:$7.4900
  • 250:$6.8400
  • 500:$6.2300
  • 1000:$5.9500
IXFH120N20P
DISTI # 193458P
IXYS CorporationMOSFET N-CHANNEL 200V 120A TO247, TU64
  • 5:£6.5300
  • 20:£6.1800
  • 50:£5.9000
  • 100:£5.1200
IXFH120N20P
DISTI # 193458
IXYS CorporationMOSFET N-CHANNEL 200V 120A TO247, EA27
  • 1:£7.0700
  • 5:£6.5300
  • 20:£6.1800
  • 50:£5.9000
  • 100:£5.1200
IXFH120N20P
DISTI # C1S331700014300
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
32
  • 25:$7.2860
  • 10:$8.5150
  • 1:$9.3350
IXFH120N20P
DISTI # C1S331700119234
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
60
  • 50:$8.7500
  • 25:$9.5300
  • 10:$9.7500
  • 1:$14.3000
IXFH120N20P
DISTI # 1427287
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
38
  • 1:$17.4200
  • 10:$15.6800
  • 25:$13.0500
  • 50:$12.1200
  • 100:$11.8600
  • 250:$10.8300
  • 500:$9.8600
  • 1000:$9.4200
IXFH120N20P
DISTI # 1427287
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
38
  • 1:£9.2500
  • 5:£8.6600
  • 10:£6.4800
  • 50:£6.0200
  • 100:£5.9000
圖片 型號 描述
SX1272IMLTRT

Mfr.#: SX1272IMLTRT

OMO.#: OMO-SX1272IMLTRT

RF Transceiver HIGH LINK BUDGET TRANSCEIVER
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D

MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
FDB52N20TM

Mfr.#: FDB52N20TM

OMO.#: OMO-FDB52N20TM

MOSFET 200V N-Ch MOSFET
SN74LVC1G86QDCKTQ1

Mfr.#: SN74LVC1G86QDCKTQ1

OMO.#: OMO-SN74LVC1G86QDCKTQ1

Logic Gates SINGLE 2-INPUT EXCLUSIVE-OR GATE
74LVC2G02DP,125

Mfr.#: 74LVC2G02DP,125

OMO.#: OMO-74LVC2G02DP-125

Logic Gates 3.3V DUAL 2-INPUT
EEE-FK1E101SP

Mfr.#: EEE-FK1E101SP

OMO.#: OMO-EEE-FK1E101SP

Aluminum Electrolytic Capacitors - SMD 25volts 100uF SMD AEC-Q200 Reflow Only
T495D226K035ATE260

Mfr.#: T495D226K035ATE260

OMO.#: OMO-T495D226K035ATE260

Tantalum Capacitors - Solid SMD 35V 22uF 2917 10% ESR=260mOhms
T495D226K035ATE260

Mfr.#: T495D226K035ATE260

OMO.#: OMO-T495D226K035ATE260-KEMET

Cap Tant Solid 22uF 35V D CASE 10% (7.3 X 4.3 X 2.8mm) Inward L SMD 7343-31 0.26 Ohm 125C Automotive T/R
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D-WOLFSPEED

MOSFET N-CH 1200V 31.6A TO247
EEE-FK1E101SP

Mfr.#: EEE-FK1E101SP

OMO.#: OMO-EEE-FK1E101SP-PANASONIC

Cap Aluminum Lytic 100uF 25V 20% (6.3 X 5.8mm) SMD 0.36 Ohm 240mA 2000h 105C Automotive T/R
可用性
庫存:
Available
訂購:
2000
輸入數量:
IXFH120N20P的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$11.01
US$11.01
10
US$9.91
US$99.10
25
US$7.85
US$196.25
50
US$7.66
US$383.00
100
US$7.49
US$749.00
250
US$6.84
US$1 710.00
500
US$6.23
US$3 115.00
1000
US$5.95
US$5 950.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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