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FQB4N80TM

FQB4N80TM
Mfr. #:
FQB4N80TM
製造商:
ON Semiconductor
描述:
MOSFET N-CH 800V 3.9A D2PAK
生命週期:
製造商新產品
數據表:
FQB4N80TM 數據表
交貨:
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ECAD Model:
產品屬性
屬性值
製造商
金融服務中心
產品分類
FET - 單
打包
捲軸
單位重量
0.046296 oz
安裝方式
貼片/貼片
包裝盒
TO-252-3
技術
矽
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
3.13 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
35 ns
上升時間
45 ns
VGS-柵極-源極-電壓
30 V
Id 連續漏極電流
3.9 A
Vds-漏-源-擊穿電壓
800 V
Rds-On-Drain-Source-Resistance
3.6 Ohms
晶體管極性
N通道
典型關斷延遲時間
35 ns
典型開啟延遲時間
16 ns
正向跨導最小值
3.8 S
通道模式
增強
Tags
FQB4N, FQB4, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
***ure Electronics
N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3
***et Europe
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 800V, 3.9A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:130W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
型號 製造商 描述 庫存 價格
FQB4N80TM
DISTI # V72:2272_06301137		ON SemiconductorN-CH/800V/3.9A/3.6OHM520
  • 500:$0.8658
  • 250:$0.9806
  • 100:$1.0187
  • 25:$1.3024
  • 10:$1.3043
  • 1:$1.5051
FQB4N80TM
DISTI # FQB4N80TMCT-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		803In Stock
  • 100:$1.2683
  • 10:$1.5780
  • 1:$1.7500
FQB4N80TM
DISTI # FQB4N80TMDKR-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		803In Stock
  • 100:$1.2683
  • 10:$1.5780
  • 1:$1.7500
FQB4N80TM
DISTI # FQB4N80TMTR-ND		ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$0.9084
FQB4N80TM
DISTI # 30703250		ON SemiconductorN-CH/800V/3.9A/3.6OHM3200
  • 9600:$0.6421
  • 2400:$0.6673
  • 800:$0.7530
FQB4N80TM
DISTI # 29055410		ON SemiconductorN-CH/800V/3.9A/3.6OHM520
  • 500:$0.8658
  • 250:$0.9806
  • 100:$1.0187
  • 25:$1.3024
  • 12:$1.3043
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.5649
  • 1600:$0.5609
  • 3200:$0.5539
  • 4800:$0.5469
  • 8000:$0.5339
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€0.8359
  • 1600:€0.6839
  • 3200:€0.6269
  • 4800:€0.5779
  • 8000:€0.5369
FQB4N80TM
DISTI # FQB4N80TM		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 800:$0.6872
  • 1600:$0.6608
  • 2400:$0.6363
  • 4000:$0.6136
  • 8000:$0.5925
  • 20000:$0.5727
  • 40000:$0.5633
FQB4N80TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		2400
  • 1000:$1.0300
  • 500:$1.0800
  • 100:$1.1300
  • 25:$1.1800
  • 1:$1.2700
FQB4N80TM
DISTI # 512-FQB4N80TM		ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant		1036
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0700
  • 500:$0.9460
  • 800:$0.7470
  • 2400:$0.6620
  • 9600:$0.6370
FQB4N80TM
DISTI # 6710908P		ON SemiconductorMOSFET N-CHANNEL 800V 3.9A D2PAK, RL854
  • 5:£0.5000
FQB4N80TMFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 800
    FQB4N80TM
    DISTI # C1S541901511368    		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		3200
    • 2400:$0.6880
    • 1600:$0.8310
    • 800:$0.8990
    FQB4N80TM
    DISTI # C1S541901596147    		ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		520
    • 250:$0.9806
    • 100:$1.0187
    • 25:$1.3024
    • 10:$1.3043
    FQB4N80TM
    DISTI # 2453890RL    		ON SemiconductorMOSFET, N-CH, 800V, 3.9A, TO-263AB-3
    RoHS: Compliant    		0
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7000
    • 500:$1.5100
    • 800:$1.1900
    • 2400:$1.0500
    • 9600:$1.0100
    FQB4N80TM
    DISTI # 2453890    		ON SemiconductorMOSFET, N-CH, 800V, 3.9A, TO-263AB-3
    RoHS: Compliant    		0
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7000
    • 500:$1.5100
    • 800:$1.1900
    • 2400:$1.0500
    • 9600:$1.0100
    圖片 型號 描述
    FQB4P25TM

    Mfr.#: FQB4P25TM

    OMO.#: OMO-FQB4P25TM

    		 MOSFET 250V P-Channel QFET
    FQB45N15V2TM

    Mfr.#: FQB45N15V2TM

    OMO.#: OMO-FQB45N15V2TM-ON-SEMICONDUCTOR

    		 MOSFET N-CH 150V 45A D2PAK
    FQB46N15TM

    Mfr.#: FQB46N15TM

    OMO.#: OMO-FQB46N15TM-1190

    		 Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    FQB4N20

    Mfr.#: FQB4N20

    OMO.#: OMO-FQB4N20-1190

    		 全新原裝
    FQB4N25

    Mfr.#: FQB4N25

    OMO.#: OMO-FQB4N25-1190

    		 全新原裝
    FQB4N60C

    Mfr.#: FQB4N60C

    OMO.#: OMO-FQB4N60C-1190

    		 全新原裝
    FQB4N90TM

    Mfr.#: FQB4N90TM

    OMO.#: OMO-FQB4N90TM-ON-SEMICONDUCTOR

    		 MOSFET N-CH 900V 4.2A D2PAK
    FQB4N90TM-NL

    Mfr.#: FQB4N90TM-NL

    OMO.#: OMO-FQB4N90TM-NL-1190

    		 全新原裝
    FQB4P40TM-NL

    Mfr.#: FQB4P40TM-NL

    OMO.#: OMO-FQB4P40TM-NL-1190

    		 全新原裝
    FQB44N10TM

    Mfr.#: FQB44N10TM

    OMO.#: OMO-FQB44N10TM-ON-SEMICONDUCTOR

    		 MOSFET N-CH 100V 43.5A D2PAK
    可用性
    庫存:
    Available
    訂購:
    3000
    輸入數量:
    FQB4N80TM的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.79
    US$0.79
    10
    US$0.75
    US$7.49
    100
    US$0.71
    US$70.93
    500
    US$0.67
    US$334.95
    1000
    US$0.63
    US$630.50
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