APTGT300A120G

APTGT300A120G
Mfr. #:
APTGT300A120G
製造商:
Microchip / Microsemi
描述:
IGBT Modules CC6106
生命週期:
製造商新產品
數據表:
APTGT300A120G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APTGT300A120G DatasheetAPTGT300A120G Datasheet (P4-P6)
ECAD Model:
產品屬性
屬性值
製造商:
微芯片
產品分類:
IGBT 模塊
RoHS:
Y
產品:
IGBT 矽模塊
配置:
雙重的
集電極-發射極電壓 VCEO 最大值:
1.2 kV
集電極-發射極飽和電壓:
1.7 V
25 C 時的連續集電極電流:
420 A
柵極-發射極漏電流:
600 nA
Pd - 功耗:
1.38 kW
包裝/案例:
SP6
最低工作溫度:
- 40 C
最高工作溫度:
+ 100 C
打包:
管子
品牌:
微芯片/Microsemi
安裝方式:
底盤安裝
最大柵極發射極電壓:
20 V
產品類別:
IGBT 模塊
出廠包裝數量:
1
子類別:
IGBT
單位重量:
3.880136 oz
Tags
APTGT300A1, APTGT300A, APTGT300, APTGT30, APTGT3, APTGT, APTG, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT300A120G
***et
Trans IGBT Module N-CH 1.2KV 420A 7-Pin Case SP6
***rochip SCT
High Voltage Power Module, Phase leg, 1200V, RoHS
***el Electronic
IGBT MODULE 1200V 420A 1380W SP6
***i-Key
IGBT MODULE TRENCH PHASE LEG SP6
***el Electronic
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
***p One Stop Global
Trans IGBT Module N-CH 1200V 420A 1550000mW 7-Pin 62MM-1 Tray
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 22 mJ Energy dissipation during turn-off time: 23 mJ
*** Electronics
IGBT Array & Module Transistor, N Channel, 440 A, 1.7 V, 1.45 kW, 1.2 kV, Module
***ow.cn
Trans IGBT Module N-CH 1200V 440A 1450000mW Automotive 7-Pin 62MM-1 Tray
***ment14 APAC
IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:440A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:1.45kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:7; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:M62a; Current Ic Continuous a Max:300A; Current Temperature:80°C; Fall Time tf:0.13µs; Package / Case:Econopack 3; Power Dissipation Max:1.45kW; Power Dissipation Pd:1.45kW; Power Dissipation Pd:1.45kW; Pulsed Current Icm:600A; Rise Time:0.09µs; Termination Type:Screw; Voltage Vces:1.2kV
***ineon
Our well-known 62 mm 1200V dual IGBT modules with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency Diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***el Electronic
Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
*** Electronic Components
IGBT Modules 1200V 200A SINGLE
***trelec
IGBT module Connection: 2 x M6, 3 x M4 Fastening: 4 x M6 Configuration: Single Housing type: 62 mm Collector-emitter saturation voltage: 3.1 V
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGL240TL120G
***et
Trans IGBT Module N-CH 1.2KV 305A 12-Pin Case SP6
*** Stop Electro
Insulated Gate Bipolar Transistor, 305A I(C), 1200V V(BR)CES
***rochip SCT
High Voltage Power Module, Three level inverter, 1200V, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***el Electronic
IGBT MODULE 1200V 305A 1000W SP6
***i-Key
POWER MOD IGBT4 3LVL INVERT SP6
***ical
Trans IGBT Module N-CH 1200V 55A 208000mW 32-Pin Case SP-3 Tube
***ark
Pm-Igbt-Tfs-Sp3F Sp3F Tube Rohs Compliant: Yes |Microchip APTGT35X120T3G
*** Stop Electro
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Three Phase bridge, 1200V, RoHS
***i-Key
IGBT MOD TRENCH 3PH BRIDGE SP3
***ical
Trans IGBT Module N-CH 1200V 220A 690000mW 7-Pin Case SP-6 Tube
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT150DU120G
*** Stop Electro
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Dual common source, 1200V, RoHS
***i-Key
POWER MOD IGBT TRENCH DL SRC SP6
圖片 型號 描述
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Mfr.#: APTGT35H120T3G

OMO.#: OMO-APTGT35H120T3G

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Mfr.#: APTGT300SK60G

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APTGT300DU120G

Mfr.#: APTGT300DU120G

OMO.#: OMO-APTGT300DU120G

IGBT Modules DOR CC6056
APTGT300A170G

Mfr.#: APTGT300A170G

OMO.#: OMO-APTGT300A170G-MICROSEMI

IGBT PHASE TRENCH FIELD STOP SP6
APTGT300DA170G

Mfr.#: APTGT300DA170G

OMO.#: OMO-APTGT300DA170G-MICROSEMI

Trans IGBT Module N-CH 1.7KV 400A 5-Pin Case SP6 - Rail/Tube (Alt: APTGT300DA170G)
可用性
庫存:
Available
訂購:
2000
輸入數量:
APTGT300A120G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
100
US$196.11
US$19 611.00
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