IPB80N06S2L06ATMA2

Mfr. #:: IPB80N06S2L06ATMA2
製造商:: Infineon Technologies
描述:: MOSFET N-CH 55V 80A TO263-3
生命週期:: 製造商新產品
數據表:: IPB80N06S2L06ATMA2 數據表
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更多信息:: IPB80N06S2L06ATMA2 更多信息

產品屬性
屬性值

Tags: IPB80N06S2L06, IPB80N06S2L0, IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80N06S2L06ATMA2 描述

***Components: On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L06ATMA1

***ure Electronics: Single N-Channel 55 V 6.3 mOhm 150 nC OptiMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***et: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263

***et Europe: Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R

***i-Key: MOSFET N-CH 55V 80A TO263-3

***ronik: N-CH 55V 80A 6mOhm TO263-3

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

IPB80N06S2L06ATMA2 更多信息

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型號	製造商	描述	庫存	價格
IPB80N06S2L06ATMA2 DISTI # V36:1790_06383908	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R	0	1000:$1.1000
IPB80N06S2L06ATMA2 DISTI # IPB80N06S2L06ATMA2CT-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	623In Stock	500:$1.2266 100:$1.4930 10:$1.8570 1:$2.0700
IPB80N06S2L06ATMA2 DISTI # IPB80N06S2L06ATMA2DKR-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	623In Stock	500:$1.2266 100:$1.4930 10:$1.8570 1:$2.0700
IPB80N06S2L06ATMA2 DISTI # IPB80N06S2L06ATMA2TR-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.8620 5000:$0.8847 2000:$0.9187 1000:$0.9867
IPB80N06S2L06ATMA2 DISTI # IPB80N06S2L06ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L06ATMA2) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.0900 4000:$1.1900 6000:$1.1900 1000:$1.2900 2000:$1.2900
IPB80N06S2L06ATMA2 DISTI # SP001067880	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001067880) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.0900 4000:€1.1900 6000:€1.1900 2000:€1.2900 1000:€1.6900
IPB80N06S2L06ATMA2 DISTI # 726-IPB80N06S2L06ATM	Infineon Technologies AG	MOSFET N-CHANNEL_55/60V	159	1:$2.7700 10:$2.3600 100:$1.8800 500:$1.6500 1000:$1.3600 2000:$1.2700 5000:$1.2200

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