2SD1816S-E

Mfr. #:: 2SD1816S-E
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT BIP NPN 4A 100V
生命週期:: 製造商新產品
數據表:: 2SD1816S-E 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 100 V

發射極基極電壓 VEBO：: 6 V

最大直流集電極電流：: 4 A

增益帶寬積 fT：: 130 MHz

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: 2SD1816

高度：: 2.3 mm

打包：: 大部分

寬度：: 6.5 mm

品牌：: 安森美半導體

Pd - 功耗：: 20 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 500

子類別：: 晶體管

Tags: 2SD1816S, 2SD1816, 2SD181, 2SD18, 2SD1, 2SD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SD1816S-E 描述

***emi: Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

***r Electronics: Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251

***ical: Trans GP BJT NPN 100V 4A 1000mW 3-Pin(3+Tab) TP Bag

***ure Electronics: Bipolar Transistors - BJT BIP NPN 3A 100V

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN

***ical: Trans GP BJT NPN 100V 3A 1000mW 3-Pin(3+Tab) TP Bag

***nell: TRANSISTOR, BIPOLAR, NPN, 100V, 3A-TO251;

***-Wing Technology: Bulk Through Hole NPN Single Bipolar (BJT) Transistor 70 @ 500mA 5V 3A 1W 130MHz

***emi: Bipolar Transistor, 100V, 3A, Low VCE(sat), NPN Single, TP/TP-FA

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN

***et: Trans GP BJT PNP 100V 3A 3-Pin(3+Tab) TP T/R

***-Wing Technology: Bulk Through Hole NPN SINGLE Bipolar (BJT) Transistor 200 @ 500mA 5V 1muA ICBO 1W 180MHz

***emi: Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

***r Electronics: Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251

***ical: Trans GP BJT NPN 100V 4A 1000mW 3-Pin(3+Tab) TP Bag

*** Electronics: Bipolar Transistors - BJT BIP NPN 4A 100V

Market price

型號	製造商	描述	庫存	價格
2SD1816S-E DISTI # V99:2348_07310488	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	85	2500:$0.3178 1000:$0.3580 100:$0.4350 10:$0.6743 1:$0.7819
2SD1816S-E DISTI # V36:1790_07310488	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	0
2SD1816S-E DISTI # 2SD1816S-E-ND	ON Semiconductor	TRANS NPN 100V 4A TP RoHS: Compliant Min Qty: 1 Container: Bulk	900In Stock	1000:$0.3943 500:$0.4929 100:$0.6235 10:$0.8130 1:$0.9200
2SD1816S-E DISTI # 25863597	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	85	2500:$0.3416 1000:$0.3849 100:$0.4676 20:$0.6590
2SD1816S-E DISTI # 2SD1816S-E	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag - Bulk (Alt: 2SD1816S-E) RoHS: Compliant Min Qty: 1500 Container: Bulk	Americas - 0	15000:$0.2889 7500:$0.2969 4500:$0.2999 3000:$0.3039 1500:$0.3059
2SD1816S-E DISTI # 65T2530	ON Semiconductor	BIP NPN 4A 100V / BLKBG	0	2500:$0.3380 1000:$0.3470 500:$0.4720 250:$0.4860 100:$0.5000 25:$0.7370 10:$0.7580 1:$0.9690
2SD1816S-E DISTI # 863-2SD1816S-E	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 4A 100V RoHS: Compliant	223	1:$0.8800 10:$0.7280 100:$0.4700 1000:$0.3760 2500:$0.3170 10000:$0.3060 25000:$0.2940

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