IHW25N120E1XKSA1

IHW25N120E1XKSA1
Mfr. #:
IHW25N120E1XKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命週期:
製造商新產品
數據表:
IHW25N120E1XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-247-3
安裝方式:
通孔
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
1.2 kV
集電極-發射極飽和電壓:
1.5 V
最大柵極發射極電壓:
20 V
25 C 時的連續集電極電流:
50 A
Pd - 功耗:
231 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
打包:
管子
連續集電極電流 Ic 最大值:
50 A
品牌:
英飛凌科技
柵極-發射極漏電流:
100 nA
產品類別:
IGBT晶體管
出廠包裝數量:
240
子類別:
IGBT
第 # 部分別名:
IHW25N120E1 SP001391910
單位重量:
0.211644 oz
Tags
IHW25N120E, IHW25N, IHW25, IHW2, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 1.2Kv, 50A, To-247; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.5V; Power Dissipation Pd:231W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
The new RC-E IGBTs are cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant applications. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineons proven quality in RC IGBTs and meets all the needs of so switching applications, including attractive pricing compared to other general purpose IGBTs. | Summary of Features: Low E off and V ce(sat); Designed for so switching applications; Optimized for performance with switching frequencies from 18kHz40kHz; Most commonly used blocking voltage, 1200V | Benefits: Price versus performance leader for cost-e ective designs; Low losses help designs meet energy efficiency standards; Drop-in replacement for existing designs; Soft switching for good EMI behavior | Target Applications: Low- to mid-range induction cookers
型號 製造商 描述 庫存 價格
IHW25N120E1XKSA1
DISTI # V99:2348_16563132
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube239
  • 500:$2.4840
  • 250:$2.6890
  • 100:$2.9190
  • 10:$3.3630
  • 1:$4.3483
IHW25N120E1XKSA1
DISTI # V36:1790_16563132
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$1.7530
  • 120000:$1.7570
  • 24000:$2.4100
  • 2400:$3.7460
  • 240:$3.9800
IHW25N120E1XKSA1
DISTI # IHW25N120E1XKSA1-ND
Infineon Technologies AGIGBT NPT/TRENCH 1200V 50A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
155In Stock
  • 2640:$2.1064
  • 720:$2.6225
  • 240:$3.0807
  • 25:$3.5548
  • 10:$3.7600
  • 1:$4.1900
IHW25N120E1XKSA1
DISTI # 31691675
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube239
  • 3:$4.3483
IHW25N120E1XKSA1
DISTI # IHW25N120E1XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube - Rail/Tube (Alt: IHW25N120E1XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$1.8900
  • 2400:$1.8900
  • 480:$1.9900
  • 960:$1.9900
  • 240:$2.0900
IHW25N120E1XKSA1
DISTI # SP001391910
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube (Alt: SP001391910)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€1.4900
  • 500:€1.5900
  • 100:€1.6900
  • 25:€1.7900
  • 50:€1.7900
  • 10:€1.8900
  • 1:€2.0900
IHW25N120E1XKSA1
DISTI # 34AC1619
Infineon Technologies AGIGBT, SINGLE, 1.2KV, 50A, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:231W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes2146
  • 500:$2.5100
  • 250:$2.8100
  • 100:$2.9600
  • 50:$3.1100
  • 25:$3.2600
  • 10:$3.4100
  • 1:$4.0200
IHW25N120E1XKSA1
DISTI # 726-IHW25N120E1XKSA1
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
2304
  • 1:$3.9800
  • 10:$3.3800
  • 100:$2.9300
  • 250:$2.7800
  • 500:$2.4900
IHW25N120E1XKSA1
DISTI # 2781025
Infineon Technologies AGIGBT, SINGLE, 1.2KV, 50A, TO-247
RoHS: Compliant
2146
  • 100:$3.2400
  • 10:$3.6500
  • 1:$3.9100
IHW25N120E1XKSA1
DISTI # 2781025
Infineon Technologies AGIGBT, SINGLE, 1.2KV, 50A, TO-2472146
  • 500:£1.9400
  • 250:£2.1600
  • 100:£2.2800
  • 10:£2.6400
  • 1:£3.4600
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SN75176BP

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GBJ5010-BP

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STGWA40H65DFB

Mfr.#: STGWA40H65DFB

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STGWA20M65DF2

Mfr.#: STGWA20M65DF2

OMO.#: OMO-STGWA20M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
STGW30M65DF2

Mfr.#: STGW30M65DF2

OMO.#: OMO-STGW30M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
FGH40T65UQDF-F155

Mfr.#: FGH40T65UQDF-F155

OMO.#: OMO-FGH40T65UQDF-F155

IGBT Transistors 650V FS4 Trench IGBT
SN75451BP

Mfr.#: SN75451BP

OMO.#: OMO-SN75451BP

Buffers & Line Drivers Dual Hi Spd Periph
C3M0120090D

Mfr.#: C3M0120090D

OMO.#: OMO-C3M0120090D

MOSFET G3 SiC MOSFET 900V, 120mOhm
STGWA20M65DF2

Mfr.#: STGWA20M65DF2

OMO.#: OMO-STGWA20M65DF2-STMICROELECTRONICS

IGBT TRENCH 650V 40A TO247
可用性
庫存:
Available
訂購:
1985
輸入數量:
IHW25N120E1XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$3.98
US$3.98
10
US$3.38
US$33.80
100
US$2.93
US$293.00
250
US$2.78
US$695.00
500
US$2.49
US$1 245.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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