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IPB017N10N5LFATMA1

IPB017N10N5LFATMA1
Mfr. #:
IPB017N10N5LFATMA1
製造商:
Infineon Technologies
描述:
MOSFET DIFFERENTIATED MOSFETS
生命週期:
製造商新產品
數據表:
IPB017N10N5LFATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPB017N10N5LFATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-7
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
180 A
Rds On - 漏源電阻：
1.5 mOhms
Vgs th - 柵源閾值電壓：
2.2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
210 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
375 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
系列：
OptiMOS 5
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
正向跨導 - 最小值：
132 S
秋季時間：
27 ns
產品類別：
MOSFET
上升時間：
23 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
80 ns
典型的開啟延遲時間：
33 ns
第 # 部分別名：
IPB017N10N5LF SP001503850
單位重量：
0.077603 oz
Tags
IPB017, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V D2PAK-7
***ical
Trans MOSFET N-CH 100V 180A
***ronik
N-CH 100V 180A 1,5mOhm TO263-7
***et Europe
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 100V, 180A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 180A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 100V, 180A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:180A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0015ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
型號 製造商 描述 庫存 價格
IPB017N10N5LFATMA1
DISTI # V72:2272_17076743		Infineon Technologies AGDIFFERENTIATED MOSFETS0
    IPB017N10N5LFATMA1
    DISTI # V36:1790_17076743    		Infineon Technologies AGDIFFERENTIATED MOSFETS0
    • 1000000:$3.3290
    • 500000:$3.3320
    • 100000:$3.5680
    • 10000:$3.9820
    • 1000:$4.0510
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LFATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		362In Stock
    • 500:$4.7911
    • 100:$5.5020
    • 10:$6.6460
    • 1:$7.3600
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LFATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-7
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		362In Stock
    • 500:$4.7911
    • 100:$5.5020
    • 10:$6.6460
    • 1:$7.3600
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LFATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-7
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$3.9013
    • 1000:$4.0514
    IPB017N10N5LFATMA1
    DISTI # SP001503850    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001503850)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 1000
    • 10000:€3.0900
    • 6000:€3.2900
    • 4000:€3.4900
    • 2000:€3.6900
    • 1000:€3.7900
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LF    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: IPB017N10N5LF)
    RoHS: Compliant
    Min Qty: 2000    		Asia - 10000
    • 100000:$4.1422
    • 50000:$4.2031
    • 20000:$4.2658
    • 10000:$4.3304
    • 6000:$4.4658
    • 4000:$4.6098
    • 2000:$4.7635
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LFATMA1    		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB017N10N5LFATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 6000:$3.5900
    • 10000:$3.5900
    • 4000:$3.7900
    • 2000:$3.8900
    • 1000:$4.0900
    IPB017N10N5LFATMA1
    DISTI # 93AC7097    		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes0
    • 500:$4.4700
    • 250:$4.9100
    • 100:$5.1300
    • 50:$5.5200
    • 25:$5.9200
    • 10:$6.2000
    • 1:$6.8600
    IPB017N10N5LFATMA1
    DISTI # 726-IPB017N10N5LFATM    		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
    RoHS: Compliant    		2970
    • 1:$6.7900
    • 10:$6.1400
    • 25:$5.8600
    • 100:$5.0800
    • 250:$4.8600
    • 500:$4.4300
    • 1000:$3.8500
    • 2000:$3.7100
    IPB017N10N5LFATMA1
    DISTI # XSKDRABV0033034    		Infineon Technologies AG 
    RoHS: Compliant    		3000 in Stock0 on Order
    • 3000:$4.9100
    • 1000:$5.2600
    IPB017N10N5LFATMA1
    DISTI # 2986455    		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, 313W, TO-263
    RoHS: Compliant    		0
    • 100:$5.6100
    • 50:$5.8700
    • 25:$6.8000
    • 10:$6.9300
    • 5:$7.4700
    • 1:$8.2800
    IPB017N10N5LFATMA1
    DISTI # 2986455    		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, 313W, TO-2633
    • 500:£3.4500
    • 250:£3.7700
    • 100:£3.9600
    • 10:£4.5600
    • 1:£5.8000
    圖片 型號 描述
    LAN8740AI-EN

    Mfr.#: LAN8740AI-EN

    OMO.#: OMO-LAN8740AI-EN

    		 Ethernet ICs Small Footprint MII/RMII 10/100 Energy Efficient Ethernet Transceiver
    1EDN7550BXTSA1

    Mfr.#: 1EDN7550BXTSA1

    OMO.#: OMO-1EDN7550BXTSA1

    		 Gate Drivers DRIVER IC
    NRVB120VLSFT1G

    Mfr.#: NRVB120VLSFT1G

    OMO.#: OMO-NRVB120VLSFT1G

    		 Schottky Diodes & Rectifiers AUTO STANDARD OF MBR
    EMVY630GDA471MMH0S

    Mfr.#: EMVY630GDA471MMH0S

    OMO.#: OMO-EMVY630GDA471MMH0S

    		 Aluminum Electrolytic Capacitors - SMD 470uF 63 Volt
    B57421V2222J062

    Mfr.#: B57421V2222J062

    OMO.#: OMO-B57421V2222J062

    		 NTC Thermistors 0805 2.2K 5% B-4000 NTC
    DF51A-3P-2DSA

    Mfr.#: DF51A-3P-2DSA

    OMO.#: OMO-DF51A-3P-2DSA-HIROSE

    		 DF51 Series Single Row 3 Position 2 mm No Guide Boss Straight Tin Plated Heade
    J3011G21DNL

    Mfr.#: J3011G21DNL

    OMO.#: OMO-J3011G21DNL-PULSE-ELECTRONICS

    		 Modular Connectors / Ethernet Connectors SMT 1X1 TAB UP 4CORE
    LAN8740AI-EN

    Mfr.#: LAN8740AI-EN

    OMO.#: OMO-LAN8740AI-EN-MICROCHIP-TECHNOLOGY

    		 IC TXRX ETHERNET 100MBPS 32QFN
    08051C104K4Z2A

    Mfr.#: 08051C104K4Z2A

    OMO.#: OMO-08051C104K4Z2A-AVX

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100v .1uF 10% FLEXITERM
    B57421V2222J062

    Mfr.#: B57421V2222J062

    OMO.#: OMO-B57421V2222J062-EPCOS

    		 Thermistors - NTC 0805 2.2K 5% B-4000 NTC
    可用性
    庫存:
    Available
    訂購:
    1985
    輸入數量:
    IPB017N10N5LFATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$6.79
    US$6.79
    10
    US$6.14
    US$61.40
    25
    US$5.86
    US$146.50
    100
    US$5.08
    US$508.00
    250
    US$4.86
    US$1 215.00
    500
    US$4.43
    US$2 215.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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