IPP60R280P7XKSA1

IPP60R280P7XKSA1
Mfr. #:
IPP60R280P7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET LOW POWER_NEW
生命週期:
製造商新產品
數據表:
IPP60R280P7XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPP60R280P7XKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
12 A
Rds On - 漏源電阻:
214 mOhms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
18 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
53 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
管子
系列:
CoolMOS P7
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
秋季時間:
9 ns
產品類別:
MOSFET
上升時間:
9 ns
出廠包裝數量:
500
子類別:
MOSFET
典型關斷延遲時間:
60 ns
典型的開啟延遲時間:
17 ns
第 # 部分別名:
IPP60R280P7 SP001647026
單位重量:
0.063493 oz
Tags
IPP60R280P, IPP60R28, IPP60R2, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 280 mOhm 18 nC CoolMOS™ Power Mosfet - TO-220-3
***i-Key
MOSFET N-CH 600V 12A TO220-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 600V, 12A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.214Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:53W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 12A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.214ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:53W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型號 製造商 描述 庫存 價格
IPP60R280P7XKSA1
DISTI # V36:1790_18204914
Infineon Technologies AG600VCoolMOS P7 Power Transistor0
    IPP60R280P7XKSA1
    DISTI # IPP60R280P7XKSA1-ND
    Infineon Technologies AGMOSFET N-CH 600V 12A TO220-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    1000In Stock
    • 1000:$1.1992
    • 500:$1.4209
    • 100:$1.7903
    • 10:$2.1970
    • 1:$2.4200
    IPP60R280P7XKSA1
    DISTI # SP001647026
    Infineon Technologies AGLOW POWER_NEW (Alt: SP001647026)
    RoHS: Compliant
    Min Qty: 50
    Europe - 480
    • 50:€1.1179
    • 100:€0.9319
    • 200:€0.8599
    • 300:€0.7989
    • 500:€0.7449
    IPP60R280P7XKSA1
    DISTI # IPP60R280P7XKSA1
    Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPP60R280P7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 500:$0.9679
    • 1000:$0.9329
    • 2000:$0.8989
    • 3000:$0.8689
    • 5000:$0.8529
    IPP60R280P7XKSA1
    DISTI # 34AC1711
    Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.214ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes305
    • 1000:$0.9750
    • 500:$1.1700
    • 100:$1.3400
    • 10:$1.6800
    • 1:$1.9700
    IPP60R280P7XKSA1Infineon Technologies AGSingle N-Channel 600 V 280 mOhm 18 nC CoolMOS Power Mosfet - TO-220-3
    RoHS: Not Compliant
    500Tube
    • 500:$0.9800
    • 1000:$0.9300
    IPP60R280P7XKSA1
    DISTI # 726-IPP60R280P7XKSA1
    Infineon Technologies AGMOSFET LOW POWER_NEW
    RoHS: Compliant
    1910
    • 1:$1.9700
    • 10:$1.6800
    • 100:$1.3400
    • 500:$1.1700
    • 1000:$0.9750
    IPP60R280P7XKSA1
    DISTI # 2784041
    Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220
    RoHS: Compliant
    305
    • 1000:$1.5900
    • 500:$1.6800
    • 250:$1.9400
    • 100:$2.3000
    • 10:$2.8200
    • 1:$3.2400
    IPP60R280P7XKSA1
    DISTI # 2784041
    Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220
    RoHS: Compliant
    305
    • 500:£0.9180
    • 250:£0.9840
    • 100:£1.0500
    • 25:£1.3200
    • 5:£1.4300
    IPP60R280P7XKSA1
    DISTI # XSFP00000168972
    Infineon Technologies AGSwage Terminal Pin
    RoHS: Compliant
    1500 in Stock0 on Order
    • 1500:$1.7800
    • 500:$1.9600
    圖片 型號 描述
    OPA2171AIDGKR

    Mfr.#: OPA2171AIDGKR

    OMO.#: OMO-OPA2171AIDGKR

    Operational Amplifiers - Op Amps 36V,Low Pwr,RRO,Gen Purp Op Amp
    NE555P

    Mfr.#: NE555P

    OMO.#: OMO-NE555P

    Timers & Support Products Precision
    NE556N

    Mfr.#: NE556N

    OMO.#: OMO-NE556N

    Timers & Support Products Dual Precision
    LM5069MMX-1/NOPB

    Mfr.#: LM5069MMX-1/NOPB

    OMO.#: OMO-LM5069MMX-1-NOPB

    Hot Swap Voltage Controllers Positive High Voltage Hot Swap / Inrush
    CSD19503KCS

    Mfr.#: CSD19503KCS

    OMO.#: OMO-CSD19503KCS

    MOSFET 80V 7.6mOhm N-CH Pwr MOSFET
    LM5155DSSR

    Mfr.#: LM5155DSSR

    OMO.#: OMO-LM5155DSSR

    Switching Controllers WIDE VIN NON-SYNC BOOST CONTROLLER
    OPA2171AIDGKR

    Mfr.#: OPA2171AIDGKR

    OMO.#: OMO-OPA2171AIDGKR-TEXAS-INSTRUMENTS

    Operational Amplifiers - Op Amps 36V,Low Pwr,RRO,Gen Purp Op Amp
    LM5069MMX-1/NOPB

    Mfr.#: LM5069MMX-1/NOPB

    OMO.#: OMO-LM5069MMX-1-NOPB-TEXAS-INSTRUMENTS

    Hot Swap Voltage Controllers Positive High Voltage Hot Swap / Inrush
    CSD19503KCS

    Mfr.#: CSD19503KCS

    OMO.#: OMO-CSD19503KCS-TEXAS-INSTRUMENTS

    MOSFET N-CH 80V 94A TO220-3
    NE556N

    Mfr.#: NE556N

    OMO.#: OMO-NE556N-TEXAS-INSTRUMENTS

    IC OSC TIMER DUAL 500KHZ 14DIP
    可用性
    庫存:
    Available
    訂購:
    1984
    輸入數量:
    IPP60R280P7XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$1.97
    US$1.97
    10
    US$1.68
    US$16.80
    100
    US$1.34
    US$134.00
    500
    US$1.17
    US$585.00
    1000
    US$0.98
    US$975.00
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