MJ14002G

Mfr. #:: MJ14002G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 60A 80V 300W NPN
生命週期:: 製造商新產品
數據表:: MJ14002G 數據表
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HTML Datasheet:: MJ14002G Datasheet MJ14002G Datasheet (P4-P5)
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產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 貼片/貼片

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 80 V

集電極-基極電壓 VCBO：: 80 V

發射極基極電壓 VEBO：: 5 V

集電極-發射極飽和電壓：: 1 V

最大直流集電極電流：: 60 A

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

系列：: MJ14002

高度：: 8.51 mm

長度：: 38.86 mm

打包：: 托盤

寬度：: 26.67 mm

品牌：: 安森美半導體

連續集電極電流：: 60 A

DC 集電極/基極增益 hfe 最小值：: 30

Pd - 功耗：: 300 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 100

子類別：: 晶體管

單位重量：: 0.424663 oz

Tags: MJ1400, MJ140, MJ14, MJ1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJ14002G 描述

***ler Electronic: Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 60A, PD 300W, hFE 5

***ure Electronics: MJ Series 80 V 60 A NPN Complementary Silicon Power Transistor TO-204

***ical: Trans GP BJT NPN 80V 60A 300000mW 3-Pin(2+Tab) TO-204 Tray

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***enic: 80V 300W 60A NPN TO-3 Bipolar Transistors - BJT ROHS

***ark: BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes

***nell: TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 300W; DC Collector Current: 1mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Gain Hfe Max: 100; Current Ib: 1A; Current Ic Continuous a Max: 60A; Current Ic NPN Device: 1A; DC Current Gain Hfe Min: 15; DC Current Gain Max (hfe): 100; Junction Temperature Tj Max: +200°C; Junction Temperature Tj Min: -65°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Termination Type: Through Hole; Voltage Vcbo: 80V

Market price

型號	製造商	描述	庫存	價格
MJ14002G DISTI # V99:2348_07322835	ON Semiconductor	Trans GP BJT NPN 80V 60A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	144	1000:$7.7310 500:$8.1060 200:$8.7200 100:$9.4090 20:$10.7480 10:$11.0340 1:$11.9290
MJ14002G DISTI # MJ14002GOS-ND	ON Semiconductor	TRANS NPN 80V 60A TO3 RoHS: Compliant Min Qty: 1 Container: Tray	123In Stock	500:$9.5369 100:$10.7208 10:$12.6940 1:$13.8100
MJ14002G DISTI # 27157624	ON Semiconductor	Trans GP BJT NPN 80V 60A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	200	100:$7.9490
MJ14002G DISTI # 25863869	ON Semiconductor	Trans GP BJT NPN 80V 60A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	144	100:$9.3810 20:$10.7129 10:$10.9980 1:$11.8890
MJ14002G DISTI # MJ14002G	ON Semiconductor	Trans GP BJT NPN 80V 60A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: MJ14002G) RoHS: Compliant Min Qty: 100 Container: Tray	Americas - 90	100:$8.3900 102:$8.3900 202:$8.3900 500:$8.0900 1000:$7.6900
MJ14002G DISTI # 26K4509	ON Semiconductor	Trans GP BJT NPN 80V 60A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K4509) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$13.1500 10:$12.1000 25:$11.5900 50:$10.9100 100:$10.2200 250:$9.7100 500:$9.0900
MJ14002G DISTI # 26K4509	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 80V, TO-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:-,Power Dissipation Pd:300W,DC Collector Current:60A,DC Current Gain hFE:30hFE,No. of Pins:2Pins,MSL:- RoHS Compliant: Yes	217	1:$13.1500 10:$12.1000 25:$11.5900 50:$10.9100 100:$10.2200 250:$9.7100 500:$9.0900
MJ14002G DISTI # 70099989	ON Semiconductor	Transistor,Bipolar,Si,NPN,High Current,Power,VCEO 80VDC,IC 60A,PD 300W,hFE 5 RoHS: Compliant	0	1:$13.0900 100:$12.4400 250:$11.8100
MJ14002G	ON Semiconductor	RoHS: Not Compliant	370	1000:$9.1600 500:$9.6400 100:$10.0400 25:$10.4700 1:$11.2700
MJ14002G DISTI # 863-MJ14002G	ON Semiconductor	Bipolar Transistors - BJT 60A 80V 300W NPN RoHS: Compliant	176	1:$13.1500 10:$12.1000 20:$11.5900 100:$10.2200 200:$9.7100 500:$9.0900
MJ14002 DISTI # 863-MJ14002	ON Semiconductor	Bipolar Transistors - BJT 60A 80V 300W NPN RoHS: Not compliant	0
MJ14002G DISTI # 8624966	ON Semiconductor	BJT NPN 60A 80V TO-204-2, EA	46	1:£12.3400 5:£11.8500 25:£11.3400 50:£10.4400
MJ14002G	ON Semiconductor	RoHS: Not Compliant	Europe - 7
MJ14002G	ON Semiconductor		605
MJ14002G DISTI # C1S541900403682	ON Semiconductor	Trans GP BJT NPN 80V 60A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	144	100:$9.3810 20:$10.7129 10:$10.9980 1:$11.8890
MJ14002G DISTI # 1611192	ON Semiconductor	TRANSISTOR RoHS: Compliant	217	1:$20.8200 10:$19.1500 20:$18.3500 100:$16.1700 200:$15.3700 500:$14.3900 1000:$13.2000

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