ZXMN6A25GTA

Mfr. #:: ZXMN6A25GTA
製造商:: Diodes Incorporated
描述:: MOSFET N-Chan 60V MOSFET (UMOS)
生命週期:: 製造商新產品
數據表:: ZXMN6A25GTA 數據表
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更多信息:: ZXMN6A25GTA 更多信息

產品屬性
屬性值

製造商：: 二極管公司

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SOT-223-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 60 V

Id - 連續漏極電流：: 6.7 A

Rds On - 漏源電阻：: 50 mOhms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 3.9 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 1.65 mm

長度：: 6.7 mm

系列：: ZXMN6A25

晶體管類型：: 1 N-Channel

寬度：: 3.7 mm

品牌：: 二極管公司

秋季時間：: 10.6 ns

產品類別：: MOSFET

上升時間：: 4 ns

出廠包裝數量：: 1000

子類別：: MOSFET

典型關斷延遲時間：: 26.2 ns

典型的開啟延遲時間：: 3.8 ns

單位重量：: 0.003951 oz

Tags: ZXMN6A2, ZXMN6A, ZXMN6, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN6A25GTA 描述

***ure Electronics: N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOT-223-3

***ical: Trans MOSFET N-CH 60V 4.8A Automotive 4-Pin(3+Tab) SOT-223 T/R

***nell: MOSFET, N, 60V, SOT-223; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.7A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-223 (TO-261); Termination Type:SMD; Current, Idm Pulse:28.5A; Pin Configuration:1(G),2(D), 3(S), TAB(D); Power, Pd:2W; Typ Capacitance Ciss:1063pF; Voltage, Vds Max:60V; Voltage, Vgs th Min:1V

***ure Electronics: N-Channel 60 V 0.04 Ohm Enhancement Mode Mosfet - SOT-223

***et: Trans MOSFET N-CH 60V 7.5A 4-Pin(3+Tab) SOT-223 T/R

***ark: N CHANNEL MOSFET, 60V, 6.9A SOT-223; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.9A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:60V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:45mohm; Package / Case:SOT-223; Power Dissipation Pd:2W; Power Dissipation Pd:3.9W; Power Dissipation Ptot Max:2W; Pulse Current Idm:30.6A; SMD Marking:ZXMN6A09; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

***ure Electronics: N-Channel 60 V 0.08 Ohm Power MOSFET Surface Mount - SOT-223-3

***sible Micro: Transistor, MOSFET, N-ch, 60V, 3.8A, SOT223, SMD

***ark: Mosfet, N-Ch, 60V, 5.3A, Sot-223 Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET N-Channel 60V 5.3A SOT223

***des Inc SCT: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ark: MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous

***ure Electronics: ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223

***p One Stop Global: Trans MOSFET P-CH 60V 4.3A Automotive 4-Pin(3+Tab) SOT-223 T/R

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W

***icontronic: Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***nell: MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2012)

***eco: Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

*** Source Electronics: Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 46.2 Milliohms,ID 5.1A,SOT-223,PD 1W,VF 1.3V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

***nell: MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0462ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

***emi: N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ

*** Source Electronics: Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 60V 2.8A SOT-223

***ure Electronics: N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.8A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

ZXMN6A25GTA 更多信息

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

型號	製造商	描述	庫存	價格
ZXMN6A25GTA DISTI # V72:2272_06708113	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 6.7A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	28	25:$0.6808 10:$0.8086 1:$0.9529
ZXMN6A25GTA DISTI # ZXMN6A25GTATR-ND	Diodes Incorporated	MOSFET N-CH 60V SOT223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$0.4950
ZXMN6A25GTA DISTI # ZXMN6A25GTACT-ND	Diodes Incorporated	MOSFET N-CH 60V SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$0.6458 100:$0.8328 10:$1.0540 1:$1.1900
ZXMN6A25GTA DISTI # ZXMN6A25GTADKR-ND	Diodes Incorporated	MOSFET N-CH 60V SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$0.6458 100:$0.8328 10:$1.0540 1:$1.1900
ZXMN6A25GTA DISTI # 27539903	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 6.7A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	28	25:$0.6502 14:$0.8088
ZXMN6A25GTA DISTI # ZXMN6A25GTA	Diodes Incorporated	Trans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R (Alt: ZXMN6A25GTA) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 5000	1000:$0.5940 2000:$0.5678 3000:$0.5438 5000:$0.5289 10000:$0.5218 25000:$0.5080 50000:$0.4950
ZXMN6A25GTA DISTI # ZXMN6A25GTA	Diodes Incorporated	Trans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R - Cut TR (SOS) (Alt: ZXMN6A25GTA) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 216	1:$0.5109 10:$0.5099 25:$0.5089 50:$0.5079 125:$0.5059 250:$0.5049 500:$0.5039
ZXMN6A25GTA DISTI # ZXMN6A25GTA	Diodes Incorporated	Trans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXMN6A25GTA) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.4839 2000:$0.4829 4000:$0.4819 6000:$0.4809 10000:$0.4799
ZXMN6A25GTA DISTI # 70438844	Diodes Incorporated	MOSFET N-Channel 60V 6.7A SOT223 RoHS: Compliant	0	25:$0.7700 50:$0.7550 125:$0.7320 250:$0.7010 625:$0.6550
ZXMN6A25GTA DISTI # 522-ZXMN6A25GTA	Diodes Incorporated	MOSFET N-Chan 60V MOSFET (UMOS) RoHS: Compliant	11667	1:$0.9900 10:$0.8400 100:$0.6460 500:$0.5710 1000:$0.4500
ZXMN6A25GTA	Zetex / Diodes Inc		1830
ZXMN6A25GTA	Zetex / Diodes Inc		221
ZXMN6A25GTA DISTI # C1S205700139331	Diodes Incorporated	Trans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	28	25:$0.6502 10:$0.8088

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