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BSZ097N10NS5ATMA1

BSZ097N10NS5ATMA1
Mfr. #:
BSZ097N10NS5ATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 100V 40A TSDSON-8
生命週期:
製造商新產品
數據表:
BSZ097N10NS5ATMA1 數據表
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ECAD Model:
更多信息:
BSZ097N10NS5ATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TSDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
40 A
Rds On - 漏源電阻：
8.3 mOhms
Vgs th - 柵源閾值電壓：
2.2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
28 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
69 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.1 mm
長度：
3.3 mm
系列：
OptiMOS 5
晶體管類型：
1 N-Channel
寬度：
3.3 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
23 S
秋季時間：
5 ns
產品類別：
MOSFET
上升時間：
5 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
21 ns
典型的開啟延遲時間：
11 ns
第 # 部分別名：
BSZ097N10NS5 SP001132550
單位重量：
0.001295 oz
Tags
BSZ097N10NS5A, BSZ097N1, BSZ097, BSZ09, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***r
    R***r
    BR

    Product arrived fast very good. Great seller.

    2019-05-18
    D***v
    D***v
    RU

    Went for a very long time 3 months 2 boards working 1 when connecting suffocated can my cant prodovets recommend

    2019-05-03
    L***v
    L***v
    RU

    Ultrafast delivery, great quality. Awesome packing skills:D Thank you!

    2019-03-24
***ure Electronics
BSZ097xx Series 100 V 40 A 9.7 mOhm OptiMOS™5 Power-MOSFET - TSDSON-8 FL
***ment14 APAC
MOSFET, N-CH, 100V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:100V; On Resistance
***nell
MOSFET, N-CH, 100V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0083ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***Yang
Trans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled
***ure Electronics
Single N-Channel 80 V 7.5 mOhm 24 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***ment14 APAC
MOSFET, N-CH, 80V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:80V; On Resistance
***ineon SCT
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package, PG-TSDSON-8, RoHS
***ark
MOSFET, N-CH, 80V, 40A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***emi
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 81A, 8mΩ
***el Electronic
In a Pack of 3, N-Channel MOSFET, 49 A, 100 V, 8-Pin Power 56 ON Semiconductor FDMS86103L
***ure Electronics
FDMS86103L Series 100 V 81 A 8 mOhm N-Ch PowerTrench® MOSFET - Power56
*** Stop Electro
Power Field-Effect Transistor, 12A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 100V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Trans MOSFET N-CH 80(Min)V 50A 7-Pin WDSON T/R - Tape and Reel
***ponent Sense
MOSFET N-CH 80V 50A OPTIMOS MP PACKAGE 1
***ineon SCT
OptiMOS™ is the market leader in highly efficient solutions for power generation (e, MG-WDSON-2, RoHS
***i-Key
MOSFET N-CH 80V 13A/50A 2WDSON
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ical
Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
***ark
MOSFET, N-CH, 80V, 40A, TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-RoHS Compliant: Yes
***ineon SCT
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package, PG-TSDSON-8, RoHS
***nell
MOSFET, N-CH, 80V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 63W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***ure Electronics
N-Channel 100 V 8.9 mOhm 125 W SMT ThunderFET Power Mosfet - TO-263
***ical
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Mosfet, N-Ch, 100V, 29.5A, Soic Rohs Compliant: Yes
***des Inc SCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
***ical
Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
***et
MOSFET BVDSS: 61V~100V SO-8 T&R 2.5K
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
型號 製造商 描述 庫存 價格
BSZ097N10NS5ATMA1
DISTI # BSZ097N10NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3774In Stock
  • 1000:$0.8199
  • 500:$0.9896
  • 100:$1.2723
  • 10:$1.5830
  • 1:$1.7500
BSZ097N10NS5ATMA1
DISTI # BSZ097N10NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3774In Stock
  • 1000:$0.8199
  • 500:$0.9896
  • 100:$1.2723
  • 10:$1.5830
  • 1:$1.7500
BSZ097N10NS5ATMA1
DISTI # BSZ097N10NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.7302
BSZ097N10NS5ATMA1
DISTI # BSZ097N10NS5ATMA1		Infineon Technologies AGMOSFET N-CH 100V 40A TSDSON-8 - Tape and Reel (Alt: BSZ097N10NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6499
  • 10000:$0.6479
  • 20000:$0.6469
  • 30000:$0.6449
  • 50000:$0.6439
BSZ097N10NS5ATMA1
DISTI # 13AC8353		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes619
  • 1000:$0.7490
  • 500:$0.9490
  • 250:$1.0100
  • 100:$1.0800
  • 50:$1.1900
  • 25:$1.2900
  • 10:$1.4000
  • 1:$1.6400
BSZ097N10NS5ATMA1
DISTI # 726-BSZ097N10NS5ATMA		Infineon Technologies AGMOSFET N-Ch 100V 40A TSDSON-8
RoHS: Compliant		3270
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0800
  • 500:$0.9490
  • 1000:$0.7490
  • 5000:$0.6640
BSZ097N10NS5
DISTI # 726-BSZ097N10NS5		Infineon Technologies AGMOSFET N-Ch 100V 40A TSDSON-8
RoHS: Compliant		6821
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0800
  • 500:$0.9490
  • 1000:$0.7490
  • 5000:$0.6640
BSZ097N10NS5ATMA1
DISTI # 1702300		Infineon Technologies AGMOSFET N-CH 100V 40A OPTIMOS5 TSDSON8 FL, RL4960
  • 5000:£0.4960
  • 10000:£0.4920
BSZ097N10NS5ATMA1
DISTI # 2725825		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, TSDSON
RoHS: Compliant		419
  • 1000:$1.3100
  • 500:$1.5800
  • 100:$2.0300
  • 10:$2.5300
  • 1:$2.8000
BSZ097N10NS5ATMA1
DISTI # 2725825		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, TSDSON
RoHS: Compliant		409
  • 500:£0.7300
  • 250:£0.7820
  • 100:£0.8330
  • 25:£0.9320
  • 5:£1.0300
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RC0603FR-0733KL

Mfr.#: RC0603FR-0733KL

OMO.#: OMO-RC0603FR-0733KL

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DRV8353RSRGZR

Mfr.#: DRV8353RSRGZR

OMO.#: OMO-DRV8353RSRGZR-TEXAS-INSTRUMENTS

 100V 3-PHASE GATE DRIVE
22-10-2021

Mfr.#: 22-10-2021

OMO.#: OMO-22-10-2021-410

 Headers & Wire Housings VERT PCB HDR 2P GOLD PLATING
HZ1206C202R-10

Mfr.#: HZ1206C202R-10

OMO.#: OMO-HZ1206C202R-10-LAIRD-TECHNOLOGIES

 EMI Filter Beads, Chips & Arrays 2000ohms 100MHz .3A Monolithic 1206 SMD
INN3166C-H102-TL

Mfr.#: INN3166C-H102-TL

OMO.#: OMO-INN3166C-H102-TL-POWER-INTEGRATIONS

 IC OFFLINE SWITCH SR CONTROL
RL1206FR-070R4L

Mfr.#: RL1206FR-070R4L

OMO.#: OMO-RL1206FR-070R4L-YAGEO

 Current Sense Resistors - SMD 0.4ohm 1% 1/2 W
CC0805KRX7R9BB201

Mfr.#: CC0805KRX7R9BB201

OMO.#: OMO-CC0805KRX7R9BB201-YAGEO

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 200pF 50V X7R 10%
RC0603FR-0733KL

Mfr.#: RC0603FR-0733KL

OMO.#: OMO-RC0603FR-0733KL-YAGEO

 Thick Film Resistors - SMD 33K OHM 1%
P78E12-1000

Mfr.#: P78E12-1000

OMO.#: OMO-P78E12-1000-CUI

 dc-dc non-isolated, 1.0 A, 836 Vdc input, +/-12 Vdc output, SIP
可用性
庫存:
Available
訂購:
4500
輸入數量:
BSZ097N10NS5ATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.63
US$1.63
10
US$1.39
US$13.90
100
US$1.07
US$107.00
500
US$0.95
US$474.50
1000
US$0.75
US$749.00
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