UJ3D1210TS

UJ3D1210TS
Mfr. #:
UJ3D1210TS
製造商:
UnitedSiC
描述:
Schottky Diodes & Rectifiers 1200V/10A SiC SCHOTTKY DIODE G3
生命週期:
製造商新產品
數據表:
UJ3D1210TS 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
UJ3D1210TS 更多信息
產品屬性
屬性值
製造商:
聯合碳化矽
產品分類:
肖特基二極管和整流器
RoHS:
Y
產品:
肖特基碳化矽二極管
安裝方式:
通孔
包裝/案例:
TO-220-2
如果 - 正向電流:
10 A
Vrrm - 重複反向電壓:
1200 V
Vf - 正向電壓:
1.4 V
Ifsm - 正向浪湧電流:
120 A
配置:
單身的
技術:
碳化矽
Ir - 反向電流:
100 uA
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
系列:
UJ3D
資質:
AEC-Q101
打包:
管子
品牌:
聯合碳化矽
Pd - 功耗:
220.6 W
產品類別:
肖特基二極管和整流器
出廠包裝數量:
50
子類別:
二極管和整流器
Vr - 反向電壓:
1200 V
Tags
UJ3D121, UJ3D1, UJ3D, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
UJ3D Series 650V & 1200V SiC Schottky Diodes
UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).  With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 
圖片 型號 描述
LSIC1MO170E1000

Mfr.#: LSIC1MO170E1000

OMO.#: OMO-LSIC1MO170E1000

MOSFET 1700V 1000mOhm SiC MOSFET
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160

MOSFET 1200 V 160 mOhm SiC Mosfet
LSIC1MO120E0120

Mfr.#: LSIC1MO120E0120

OMO.#: OMO-LSIC1MO120E0120

MOSFET 1200 V 120 mOhm SiC Mosfet
STPSC10H12D

Mfr.#: STPSC10H12D

OMO.#: OMO-STPSC10H12D

Schottky Diodes & Rectifiers 1200V Power Schottky Silicon Carbide diode
MSC010SDA120K

Mfr.#: MSC010SDA120K

OMO.#: OMO-MSC010SDA120K

Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
C2M1000170J

Mfr.#: C2M1000170J

OMO.#: OMO-C2M1000170J

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
LSIC1MO120E0080

Mfr.#: LSIC1MO120E0080

OMO.#: OMO-LSIC1MO120E0080

MOSFET 1200V 80mOhm SiC MOSFET
LSIC1MO120E0120

Mfr.#: LSIC1MO120E0120

OMO.#: OMO-LSIC1MO120E0120-LITTELFUSE

1200V/120mohm SiC MOSFET TO-247-3L
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

1200V/160mohm SiC MOSFET TO-247-3L
LSIC1MO170E1000

Mfr.#: LSIC1MO170E1000

OMO.#: OMO-LSIC1MO170E1000-LITTELFUSE

1700V/1000mohm SiC MOSFET TO-247-3L
可用性
庫存:
32
訂購:
2015
輸入數量:
UJ3D1210TS的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$10.71
US$10.71
10
US$10.13
US$101.30
25
US$9.23
US$230.75
50
US$8.60
US$430.00
100
US$8.33
US$833.00
250
US$7.66
US$1 915.00
500
US$6.98
US$3 490.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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