GTVA126001EC-V1-R0

Mfr. #:: GTVA126001EC-V1-R0
製造商:: N/A
描述:: RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 600W
生命週期:: 製造商新產品
數據表:: GTVA126001EC-V1-R0 數據表
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ECAD Model:
更多信息:: GTVA126001EC-V1-R0 更多信息

產品屬性
屬性值

製造商：: 克里公司

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵碳化矽

獲得：: 18 dB

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 150 V

Vgs - 柵源擊穿電壓：: - 10 V to 2 V

Id - 連續漏極電流：: 10 A

輸出功率：: 600 W

最大漏柵電壓：: -

安裝方式：: 螺絲安裝

包裝/案例：: H-36248-2

打包：: 捲軸

工作頻率：: 1.2 GHz to 1.4 GHz

品牌：: Wolfspeed / 克里

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 50

子類別：: 晶體管

Vgs th - 柵源閾值電壓：: - 3 V

Tags: GTVA1, GTVA, GTV

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GTVA126001EC-V1-R0 更多信息

GTVA High Power RF GaN on SiC HEMT: Wolfspeed / Cree GTVA High Power RF GaN on SiC HEMT are 50V High Electron Mobility Transistors (HEMT) based on Gallium-Nitride on Silicon Carbide technology. GaN on SiC devices offer high power density coupled with a high breakdown voltage, enabling highly efficient power amplifiers. The GTVA High Power RF GaN on SiC HEMT feature input matching, high efficiency, and thermally-enhanced packages. These Pulsed/CW (Continuous Wave) devices have a pulse width of 128µs and a duty cycle of 10%.

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